• 제목/요약/키워드: Zirconium-89 ($^{89}Zr$)

검색결과 9건 처리시간 0.024초

Novel zirconium-89-based radiopharmaceuticals for medical application

  • Kim, Hee-Kwon
    • 대한방사성의약품학회지
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    • 제4권1호
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    • pp.32-35
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    • 2018
  • Since utilization of metal is attractive research area applicable to medical applications, several metals have been studied by many scientists. Zr-89 is known as one of important radioisotopes nowadays. Novel ligands for Zr-89 have been developed, and Zr-89-based radiopharmaceuticals have been employed for positron emission tomography (PET) study. In this highlight review, recent advances on Zr-89 utilization for radiophramaceuticals are illustrated.

Radiochemical separation of 89Zr: a promising radiolabel for immuno-PET

  • Vyas, Chirag K.;Park, Jeong Hoon;Yang, Seung Dae
    • 대한방사성의약품학회지
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    • 제2권1호
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    • pp.43-50
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    • 2016
  • $^{89}Zr$ with the favorable nuclear decay kinetics and chemical properties is an appealing radiometal for its application in immuno-PET using radiolabeled monoclonal antibodies. Rising demand of ultrahigh purity and high-specific activity $^{89}Zr$ has propelled the radiochemist worldwide to develop an overall efficacious method for its promising separation from the target matrix $^{89}Y$. The requirement of elevated radiochemical purity (${\geq}$ 99.99%) has accelerated the efforts since last two decades to achieve higher decontamination and separation factors of carrier free $^{89}Zr$ over $^{89}Y$ using several suitable separation techniques. However, each of the technique has its own pros and cons which prior to its actual medical application needs to be optimized and thoroughly scrutinized to avoid further complications during radiolabelling of the pharmaceuticals. In this short review article we will specifically consider as well focus on the historical development and the recent advances on the radiochemical separation of $^{89}Zr$ from $^{89}Y$ which will be helpful for the separation scientist involved in this area to understand the existing available means and plan the strategy to investigate and develop the novel techniques to overcome the problems involved in the present methods.

Zr/Ni계 지연제의 주변 온도에 따른 연소속도 변화 연구 (A Study on the Change of Burning Rate of Zirconium-Nickel Delay Elements Depending on the Ambient Temperature)

  • 김호섭;임호영;강요한;김도현;이근우
    • 한국산학기술학회논문지
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    • 제21권7호
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    • pp.82-89
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    • 2020
  • 탄약내의 화약류 특히, 지연제의 지연시간에 대한 온도의 영향은 우리나라와 같이 연평균 최고최저 온도차가 뚜렷한 환경에서 충분히 존재할 수 있음에도 불구하고 이와 관련한 연구는 아직까지 국내에 보고된 바가 없다. 이에 본 연구는 우리나라 탄약류에 주로 사용되는 Zr/Ni계 지연제에 대해 주변 온도에 따른 연소속도 변화를 실험적으로 확인하였다. 이를 위해, K413 수류탄용 K414 신관에 Zr/Ni계 지연제를 충전하고 우리나라 기상환경을 고려한 주변 온도구간(-40 ℃ ~ 50 ℃)에서 온도변화에 따른 K414 신관의 지연시간 변화를 확인 및 분석하였다. K414 신관의 지연시간은 상기 시험 온도구간 내에서 시험온도를 10 ℃ 씩 변화시켜가며 측정하였고, 측정된 지연시간은 Zr/Ni계 지연제 충전 시에 기록한 지연제의 높이를 이용하여 연소속도로 환산되었다. 시험결과, Zr/Ni계 지연제의 지연시간은 주변 온도가 증가함에 따라 선형적으로 감소하는 경향이 있으며, Zr/Ni계 지연제 온도가 1 ℃ 상승할 때 마다 지연시간이 4.18 ms 감소하고, 연소속도는 2.73 mm/ms 로 빨라진 것으로 분석되었다. 즉, 연평균 최고최저 온도차이가 20 ℃ 이상인 주변 온도 환경에서는 약 80 ms 의 지연시간 차이가 발생하므로, Zr/Ni계 지연제의 시험평가 기준수립 시, 지연제가 노출된 주변 온도 조건을 반영한 지연시간이 고려되어야 할 것으로 사료된다.

Synthesis of Zirconium Oxide Nanoballs Using Colloid-Imprinted Carbon and Their Electrical Properties

  • Kim, Chy Hyung
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.86-89
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    • 2015
  • Uniform ZrO2 nanoballs were synthesized at 700℃ using the inverse replication method through a colloid-imprinted carbon (CIC) template. The structural, dielectric, and conducting properties of the ZrO2 nanoballs were investigated and compared with those of ZrO2 film prepared by sol-gel method and powdered ZrO2 chemical. Both the monoclinic and cubic phases were found in the ZrO2 balls and film but the ZrO2 chemical showed a monoclinic phase, where the cubic structure is known to be formed at above 2,300℃. ZrO2 nanoballs showed the lower dielectric property of k = 21.2 at 1 MHz because the 8-coordinated cubic phase in the ZrO2 nanoball produced lower polarization than the polarization of the 7-coordinated monoclinic ZrO2 chemical (k = 23.6). The dielectric stability was maintained in each ZrO2 ball, film, and chemical under the applied forward and reverse voltage range (−5 to +5 V) at 1 MHz. The ionic conductivities were 7.86 × 10−8/Ω·cm for ZrO2 nanoballs, 3.29 × 10−8/Ω·cm for ZrO2 chemical, and 6.70 × 10−5/Ω·cm for the thickness of 1,053 nm ZrO2 film at room temperature with the electronic contribution being less than 0.006%.

Electrochemical Behaviors of Binary Ti-Zr Alloys

  • Oh, M.Y.;Kim, W.G.;Choe, H.C.;Ko, Y.M.
    • Corrosion Science and Technology
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    • 제8권2호
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    • pp.89-92
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    • 2009
  • Pure Ti as well as Ti-6Al-4V alloy exhibit excellent properties for dental implant applications. However, for a better biocompatibility it seems important to avoid in the composition the presence of V due to the toxic effects of V ion release. Thus Al and V free and composed of non-toxic element such as Nb, Zr alloys as biomaterials have been developed. Especially, Zr contains to same family in periodic table as Ti. The addition of Zr to Ti alloy has an excellent mechanical properties, good corrosion resistance, and biocompatibility. In this study, the electrochemical characteristics of Ti-Zr alloys for biomaterials have been investigated using by electrochemical methods. Methods: Ti-Zr(10, 20, 30 and 40 wt%) alloys were prepared by arc melting and homogenized for 24 hr at $1000^{\circ}C$ in argon atmosphere. Phase constitutions and microstructure of the specimens were characterized by XRD, OM and SEM. The corrosion properties of the specimens were examined through potentiodynamic test (potential range of -1500 ~ 2000 mV), potentiostatic test (const. potential of 300 mV) in artificial saliva solution by potentiostat (EG&G Co, PARSTAT 2273. USA).

Hydroxyapatite-Zirconia Composite Thin Films Showing Improved Mechanical Properties and Bioactivity

  • Kim, Min-Seok;Ryu, Jae-Jun;Sung, Yun-Mo
    • 한국재료학회지
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    • 제19권2호
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    • pp.85-89
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    • 2009
  • Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-$ZrO_2$) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-$ZrO_2$ and the pure HAp at the low processing temperature was proposed to be the diffusion of $Ca^{2+}$ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-$ZrO_2$ content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the $TiO_2$ and HAp films most likely due to the surface structure change.

ZrTiO4계 Gray 안료 합성과 형성기구 (Synthesis and Formation Mechanism of ZrTiO4 Gray Pigment)

  • 황동하;이병하
    • 한국세라믹학회지
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    • 제49권1호
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    • pp.84-89
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    • 2012
  • Attempts were made to develop a stable gray pigment at reducing atmosphere, substituting Ti in $ZrTiO_4$ with Mn, Fe, Co and Cu The pigment synthesized at $1300~1500^{\circ}C$ by solid state method with the composition of $ZrTi_{1-x-y}A_xB_yO_4$ (x = y = 0.005, 0.015, 0.035, 0.055, 0.075, 0.095, 0.115, 0.135, 0.155, 0.175 and 0.195 mole, A = Mn(III), Fe(III), Co(II, III) and Cu(II) (chromophores), B = Sb (counterion). The pigments were fired at $1400^{\circ}C$ for 3 h with substitute amount changes of Mn, Fe, Co and Cu to $ZrTiO_4$ crystals, and analyzed by Raman spectroscopy to figure out substitute limits. Results indicated 0.035 mole for Mn, 0.115 mole for Fe, 0.015 mole for Co and 0.015 mole for Cu as substitute limits, respectively. Figs. 1, 2, 3, and 4 represent each substitute pigments of Mn, Fe, Co and Cu. Synthesized pigment was applied to a lime and a lime-magnesia glaze at 7 wt% each, and fired at reducing atmosphere of $1240^{\circ}C$, soaking time 1h. Gray color was obtained with CIE-$L^*a^*b^*$ values at 44.55, -0.65, 1.19(Mn), 40.36, -0.90, 0.30(Fe), 42.63, -0.03, -1.49(Cu) and -40.79, -0.28, -0.91(Co), respectively.

BaZrO3에서의 프로톤 전도와 상호작용에 대한 CuO의 영향 (Effect of Copper Oxide on Migration and Interaction of Protons in Barium Zirconate)

  • 정용찬;김대희;김병국;김영철
    • 한국세라믹학회지
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    • 제48권2호
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    • pp.195-199
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    • 2011
  • The effect of copper oxide on migration and interaction of protons in barium zirconate was investigated using density functional theory. One copper atom was substituted for a zirconium atom site, and a proton was added to a $3{\times}3{\times}3$ barium zirconate superstructure. An energy barrier of 0.89 eV for proton migration was the highest among several energy barriers. To investigate the interaction between multiple protons and a copper atom, two protons were added to the superstructure. Various proton positions were determined by the interaction between the two protons and the copper atom.

유연한 기판상의 유기 트랜지스터의 절연 표면층 상태 변화에 의한 전기적 특성 향상 (Changes of dielectric surface state In organic TFTs on flexible substrate)

  • 김종무;이주원;김영민;박정수;김재경;장진;오명환;주병권
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.86-89
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    • 2004
  • Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

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