• Journal of Radiopharmaceuticals and Molecular Probes
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• v.4 no.1
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• pp.32-35
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• 2018

Since utilization of metal is attractive research area applicable to medical applications, several metals have been studied by many scientists. Zr-89 is known as one of important radioisotopes nowadays. Novel ligands for Zr-89 have been developed, and Zr-89-based radiopharmaceuticals have been employed for positron emission tomography (PET) study. In this highlight review, recent advances on Zr-89 utilization for radiophramaceuticals are illustrated.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.2 no.1
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• pp.43-50
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• 2016

$^{89}Zr$ with the favorable nuclear decay kinetics and chemical properties is an appealing radiometal for its application in immuno-PET using radiolabeled monoclonal antibodies. Rising demand of ultrahigh purity and high-specific activity $^{89}Zr$ has propelled the radiochemist worldwide to develop an overall efficacious method for its promising separation from the target matrix $^{89}Y$. The requirement of elevated radiochemical purity (${\geq}$ 99.99%) has accelerated the efforts since last two decades to achieve higher decontamination and separation factors of carrier free $^{89}Zr$ over $^{89}Y$ using several suitable separation techniques. However, each of the technique has its own pros and cons which prior to its actual medical application needs to be optimized and thoroughly scrutinized to avoid further complications during radiolabelling of the pharmaceuticals. In this short review article we will specifically consider as well focus on the historical development and the recent advances on the radiochemical separation of $^{89}Zr$ from $^{89}Y$ which will be helpful for the separation scientist involved in this area to understand the existing available means and plan the strategy to investigate and develop the novel techniques to overcome the problems involved in the present methods.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.7
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• pp.82-89
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• 2020

Among the explosives in ammunition, the delay elements, which are used as a retardant, could be influenced by the ambient temperature in the Republic of Korea, where the highest and lowest average annual temperature difference is clear. On the other hand, there has been no domestic research on this. This study examined the linear burning rates of the zirconium-nickel delay elements depending on the ambient temperature in South Korea. The ambient temperature data of South Korea were obtained from the meteorological administration, which was used to set the experimental conditions. The operational time for the K414 fuze was measured by changing the ambient temperature by 10 ℃ from -40 ℃ to 50 ℃. To convert the delay time into the burning rates, the height of the delay element in the K414 fuze body was used. The results indicated that the characteristics of the burning rates for the zirconium-nickel delay element could be estimated as linear, and both the burning rates and the delay time of the zirconium-nickel delay element were 2.73mm/ms and -4.18ms, respectively. This led to an approximately 80 ms delay time difference in the environment where the highest and lowest average annual temperature difference was above 20 ℃. Therefore, the delay time reflecting the ambient temperature should be considered when the test evaluation criteria of zirconium-nickel delay elements are established.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.86-89
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• 2015

Uniform ZrO₂ nanoballs were synthesized at 700℃ using the inverse replication method through a colloid-imprinted carbon (CIC) template. The structural, dielectric, and conducting properties of the ZrO₂ nanoballs were investigated and compared with those of ZrO₂ film prepared by sol-gel method and powdered ZrO₂ chemical. Both the monoclinic and cubic phases were found in the ZrO₂ balls and film but the ZrO₂ chemical showed a monoclinic phase, where the cubic structure is known to be formed at above 2,300℃. ZrO₂ nanoballs showed the lower dielectric property of k = 21.2 at 1 MHz because the 8-coordinated cubic phase in the ZrO₂ nanoball produced lower polarization than the polarization of the 7-coordinated monoclinic ZrO₂ chemical (k = 23.6). The dielectric stability was maintained in each ZrO₂ ball, film, and chemical under the applied forward and reverse voltage range (−5 to +5 V) at 1 MHz. The ionic conductivities were 7.86 × 10⁻⁸/Ω·cm for ZrO₂ nanoballs, 3.29 × 10⁻⁸/Ω·cm for ZrO₂ chemical, and 6.70 × 10⁻⁵/Ω·cm for the thickness of 1,053 nm ZrO₂ film at room temperature with the electronic contribution being less than 0.006%.

• Corrosion Science and Technology
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• v.8 no.2
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• pp.89-92
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• 2009

Pure Ti as well as Ti-6Al-4V alloy exhibit excellent properties for dental implant applications. However, for a better biocompatibility it seems important to avoid in the composition the presence of V due to the toxic effects of V ion release. Thus Al and V free and composed of non-toxic element such as Nb, Zr alloys as biomaterials have been developed. Especially, Zr contains to same family in periodic table as Ti. The addition of Zr to Ti alloy has an excellent mechanical properties, good corrosion resistance, and biocompatibility. In this study, the electrochemical characteristics of Ti-Zr alloys for biomaterials have been investigated using by electrochemical methods. Methods: Ti-Zr(10, 20, 30 and 40 wt%) alloys were prepared by arc melting and homogenized for 24 hr at $1000^{\circ}C$ in argon atmosphere. Phase constitutions and microstructure of the specimens were characterized by XRD, OM and SEM. The corrosion properties of the specimens were examined through potentiodynamic test (potential range of -1500 ~ 2000 mV), potentiostatic test (const. potential of 300 mV) in artificial saliva solution by potentiostat (EG&G Co, PARSTAT 2273. USA).

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.85-89
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• 2009

Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-$ZrO_2$) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-$ZrO_2$ and the pure HAp at the low processing temperature was proposed to be the diffusion of $Ca^{2+}$ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-$ZrO_2$ content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the $TiO_2$ and HAp films most likely due to the surface structure change.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.84-89
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• 2012

Attempts were made to develop a stable gray pigment at reducing atmosphere, substituting Ti in $ZrTiO_4$ with Mn, Fe, Co and Cu The pigment synthesized at $1300~1500^{\circ}C$ by solid state method with the composition of $ZrTi_{1-x-y}A_xB_yO_4$ (x = y = 0.005, 0.015, 0.035, 0.055, 0.075, 0.095, 0.115, 0.135, 0.155, 0.175 and 0.195 mole, A = Mn(III), Fe(III), Co(II, III) and Cu(II) (chromophores), B = Sb (counterion). The pigments were fired at $1400^{\circ}C$ for 3 h with substitute amount changes of Mn, Fe, Co and Cu to $ZrTiO_4$ crystals, and analyzed by Raman spectroscopy to figure out substitute limits. Results indicated 0.035 mole for Mn, 0.115 mole for Fe, 0.015 mole for Co and 0.015 mole for Cu as substitute limits, respectively. Figs. 1, 2, 3, and 4 represent each substitute pigments of Mn, Fe, Co and Cu. Synthesized pigment was applied to a lime and a lime-magnesia glaze at 7 wt% each, and fired at reducing atmosphere of $1240^{\circ}C$, soaking time 1h. Gray color was obtained with CIE-$L^*a^*b^*$ values at 44.55, -0.65, 1.19(Mn), 40.36, -0.90, 0.30(Fe), 42.63, -0.03, -1.49(Cu) and -40.79, -0.28, -0.91(Co), respectively.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.195-199
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• 2011

The effect of copper oxide on migration and interaction of protons in barium zirconate was investigated using density functional theory. One copper atom was substituted for a zirconium atom site, and a proton was added to a $3{\times}3{\times}3$ barium zirconate superstructure. An energy barrier of 0.89 eV for proton migration was the highest among several energy barriers. To investigate the interaction between multiple protons and a copper atom, two protons were added to the superstructure. Various proton positions were determined by the interaction between the two protons and the copper atom.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.86-89
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• 2004

Organic thin film transistors (OTFTs) are fabricated on the plastic substrate through 4-level mask process without photolithographic patterning to yield the simple fabrication process. And we herewith report for the effect of dielectric surface modification on the electrical characteristics of OTFTs. The KIST-JM-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide $(ZrO_2)$ gate dielectric layer. In this work, we have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.