• 한국터널지하공간학회 논문집
• /
• 제9권4호
• /
• pp.403-413
• /
• 2007

터널과 같은 지하공간 구조물에 있어서 록볼트는 숏크리트와 함께 주요 지보재 중의 하나이며, 그러므로 록볼트 시공품질 정도에 따라 이러한 지중구조물의 안정성에 큰 영향을 미치게 된다. 본 연구의 목적은 록볼트를 따라 전파되는 유도파에 대하여 푸리에 및 웨이브렛 변환을 이용하여 록볼트의 건전도를 평가하는데 있다. 각기 다른 결함비율을 가진 다섯 개의 록볼트 시험체를 제작하여 콘크리트 블록에 매설한 후, PZT($Pb[Zr_xTi_{1-x}]O_3$: lead zirconate titanate) 엘리먼트로 유도파를 발생시키고 AE(acoustic emission) 센서를 이용하여 신호를 측정하였다. 수집된 신호는 푸리에 변환을 이용하여 주파수 영역에서 분석하였고, 가버 웨이브렛을 사용한 웨이브렛 변환을 이용하여 시간-주파수영역에서 분석하였다. 푸리에 변환을 이용하여 얻은 스펙트럼을 분석하면 록볼트의 결함비율이 증가함에 따라 고주파 대역 에너지의 비율이 증가하는 것을 알 수 있다. 또한, 시간-주파수 영역에서의 각 파군별 최대 에너지가 나타나는 지점의 시간차는 각 반사파군 간의 이동 시간차를 나타내며, 이를 통해 계산된 유도파의 에너지 속도는 록볼트의 공동결함비율이 증가함에 따라 증가하는 것으로 나타났다. 본 연구는 스펙트럼 비와 에너지 속도가 록볼트의 건전도 평가에 있어서 하나의 지표가 될 수 있음을 보여준다.

• 대한기계학회논문집B
• /
• 제36권9호
• /
• pp.931-935
• /
• 2012

본 연구에서는 저온형 연료전지와 고온형 연료전지의 작동 및 구성 요소 측면 단점들을 보완하기 위해 중온 영역에서 작동하는 박막 연료전지를 제작하였다. 박막 연료전지는 이트륨이 도핑된 바륨 지르코네이트(BYZ) 전해질과 백금 수소극/공기극으로 이루어져 있으며, 성능은 $350^{\circ}C$에서 측정하였다. 350nm의 두께를 가지는 백금 수소극은 다공성 기판 위에 스퍼터링 기법을 이용하여 증착하였다. BYZ전해질은 펄스레이저 기법을 이용하여 $1{\mu}m$ 증착하였고, 상부에 스퍼터링 기법을 이용하여 200nm의 두께를 가지는 백금 공기극을 증착하였다. 개회로 전압은 약 0.81V이었고, 최대 출력 성능은 11.9mW/$cm^2$이었다.

• 분석과학
• /
• 제10권6호
• /
• pp.439-444
• /
• 1997

압전 세라믹스 [$Pb(ZrTi)O_3$] 소재에 대하여 신속하고 정확하게 분석할 수 있는 X-선 형광분석용 표준물질 12종을 제작하였다. 특히 매질효과의 제거, 보관성, 균질성 등을 고려하여 융제($Li_2B_4O_7/LiBO_2=4/1$)로 시료를 16배 희석하여 제작하였다. 네 곳의 분석기관에서 X-선 형광분광기로 12개의 표준물질에 포함된 11 원소에 대하여 검정곡선을 작성해 본 결과 PbO, $ZrO_2$, $TiO_2$, SrO, $WO_3$, $La_2O_3$, $Cr_2O_3$, MgO, $Nb_2O_5$, $MnO_2$들은 correlation factor가 0.998을 넘는 대단히 좋은 직선을 얻었다. 그러나 ZnO의 correlation factor는 0.977로 비교적 낮았으며, 이는 표준시료 중 ZnO의 함량이 10ppm 정도로 낮았기 때문이다. 본 연구에서 제작한 XRF 분석용 표준물질을 이용하면 PZT 중의 주 부성분 원소의 함량을 간편하고 신속 정확하게 분석결과를 얻을 수 있다.

• Journal of Mechanical Science and Technology
• /
• 제20권1호
• /
• pp.76-84
• /
• 2006

Arrayed ultrasonic sensors based on the piezoelectric thin film (lead-zirconate-titanate: Pb($Zr_{0.52}Ti_{0.48})O_{3}$) having composite membrane structure are fabricated. Different thermal and elastic characteristics of each layer generate the residual stress during the high temperature deposition processes, accomplished diaphragm is consequently bowing. We present the membrane deflection effects originated from the residual stress on the resonant frequencies of the sensor chips. The resonant frequencies ($f_r$) measured of each sensor structures are located in the range of $87.6{\sim}111\;kHz$, these are larger $30{\sim}40\;kHz$ than the resultant frequencies of FEM. The primary factors of $f_r$ deviations from the ideal FEM results are the membrane deflections, and the influence of stiffness variations are not so large on that. Membrane deflections have the effect of total thickness increase which sensitively change the $f_r$ to the positive direction. Stress generations of the membrane are also numerically predicted for considering the effect of stiffness variations on the $f_r$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 D
• /
• pp.1986-1988
• /
• 1999

Ferroelectric lead zirconate titanate(PZT) thin films were prepared on various bottom electrodes by rf magnetron sputtering methode. The structural phase and surface morphology of the PZT thin films were largely affected by the bottom electrodes. P-E curves of PZT thin films deposited on Pt. $RuO_2$ and Ru/$RuO_2$ bottom electrode showed typical P-E hysteresis loop. The measure values of $P_r,\;E_c$ of the Ru/PZT/Ru/$RuO_2$ capacitor were $16.9{\mu}C/Cm^2$, 140kV/ cm, respectively. The Ru/PZT/Ru/$RuO_2$ capacitors were fatigue free uP to nearly $10^9$ switching cycle but Pt/PZT/Pt capacitor showed 34% degradation uP to $10^9$ switching cycle.

• 한국표면공학회지
• /
• 제34권5호
• /
• pp.481-485
• /
• 2001

We investigated the structural and electrical properties of the Ba ($Zr_{x}$ $T_{il-x}$ )$O_3$ (BZT thin films with a mole fraction of x=0.2 and thickness 150 nm for the application in MLCC (Multilayer Ceramic Capacitor). BZT films were prepared on $Pt/SiO_2$/Si substrate at various substrate temperatures by the RF-magnetron sputtering system. When the substrate temperature was above $500^{\circ}C$, we could obtain multi-crystalline BZT films oriented at (110), (111), and (200) directions. The crystallization of the film and high dielectric constant were observed with the increase of substrate temperature. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature. This paper reports surface morphology, dielectric constant, dissipation factor, and C-V characteristics for BZT films deposited at three different temperatures. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties but a little small dielectric constant for MLCC application.

• 한국해양공학회지
• /
• 제29권1호
• /
• pp.94-99
• /
• 2015

Lead zirconate titanate (PZT) thick films with thicknesses of ㎛ were fabricated on silicon substrates using an aerosol deposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300℃, 350℃, and 450℃ respectively. The as-deposited film had a uniform microstructure without any cracks or pores. The as-deposited films on silicon were annealed at a temperature of 700℃. The 20-㎛-thick PZT film showed good adherence between the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence of pores produced from organic residue during annealing relieved the residual stresses in the deposited film.

• Journal of Electrical Engineering and Technology
• /
• 제12권2호
• /
• pp.846-851
• /
• 2017

Piezoelectricity is the capability of a piezoelectric material to change mechanical energy into electrical energy. The determination of electrical and mechanical properties plays a significant role in characterizing the piezoelectric material. The energy losses characteristics of piezoelectric material can be described by mechanical quality factor. In this paper, the output voltage and mechanical quality factor of Lead Zirconate Titanate (PZT-4A) piezoelectric material is determined under various resistance and loading conditions by using the test setup. The commercial FEM software ABAQUS is used to analyze the performance of piezoelectric material under static loading conditions. It is observed that these properties affect the performance of a material particularly in the designing of smart structures. The experimental results are partially compared to the simulation values.

• 한국세라믹학회지
• /
• 제40권4호
• /
• pp.385-392
• /
• 2003

Sol-gel preparation technique using a chemical reaction of metal alkoxides has been widely used for the fabrication of various materials including ceramics. However, its mechanism has been studied till now because a number of chemical ways are possible from various alkoxides and additives. In this study, the mechanism of hydrolysis, condensation, and polymerization of alkoxides were investigated from the fabrication of lead-zirconate-titanate (PbZr$\_$x/Ti$\_$l-x/O$_3$; PZT) thin film that is used as various micro-actuator, transducer, and sensor because of its high electro-mechanical coupling factors and thermal stability. Furthermore, the fabrication process and characteristics of self-patternable PZT film using photosensitive stabilizer were studied in order to resolve the problem of physical damage and properties degradation during dry etching for device fabrication. Using an optimum condition to prepare the self-patternable PZT film, more than 5000 ${\AA}$ thick self-patternable PZT film could be fabricated by three times coating. The PZT film showed 28.4 ${\mu}$c/cm$^2$ of remnant polarization (Pr) and 37.0 kV/cm of coercive field (E$\_$c/).

• 한국전기전자재료학회논문지
• /
• 제24권5호
• /
• pp.416-421
• /
• 2011

Nowadays, the increasing demands upon mobile devices such as wireless sensor networks and the recent advent of low power electrical devices such as MEMS make such renewable power sources attractive. A vibration-driven MEMS lead zirconate titanate $Pb(Zr,Ti)O_3$ (PZT) cantilever device is developed for energy harvesting application. This paper presents a piezoelectric based energy harvester which is suitable for power generating from conventional vibration and has in providing energy for low power electron ic devices. The PZT cantilever is used d33 mode to get the electrical power. The PZT cantilever based energy harvester with the dimension of 7 mm${\times}$3 mm${\times}$0.03 mm is fabricated using micromachining technologies. This PZT cantilever has the mechanical resonance frequency with a 900 Hz. With these conditions, we get experimentally the 37 uW output power from this device with the application of 1g acceleration using the 900 Hz vibration. From this study, we show the feasibility of one of energy harvesting candidates using PZT based structure. This PZT energy harvester could be used for various applications such a batteryless micro sensors and micro power generators.