• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.204-210
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• 2000

The control of dissolved aluminum concentration in the hot dip zinc galvanizing bath is greatly important in producing galvannealed steel sheets. The purpose of present study is to provide basic data for measurement of the aluminum concentration in site in hot dip zinc bath at the temperature of $460^{\circ}C\~500^{\circ}C$ using $CaF_2$ solid electrolyte sensor with three kinds of reference electrode. Good workability and stability of the sensor were confirmed with the $Bi+BiF_3$ reference electrode from the emf measurement. In order to measure the aluminum concentration in Zn-Al bath, the galvanic cell of fluorine ion was constructed with $CaF_2$ solid electrolyte as follows; $$(-)W|Zn-Al,\;AlF_3|CaF_2|Bi,BiF_3|W(+)$$. The emf measurement was made at the temperature of $460\pm10^{\circ}C$ in the Zn-Al bath. The following correlationship between aluminum concentration and emf was obtained by the least square regression analysis; $$E/mV=56.795log[\%Al]+1881.7\;R=0.9704$$,$$0.026wt\%{\leq}[\%Al]{\leq}0.984wt\%$$

• Applied Chemistry for Engineering
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• v.9 no.1
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• pp.52-57
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• 1998

The effects of additives such as zinc compounds in 4M KOH electrolyte of Al-air cell have been studied. Zinc compounds in electrolyte increased hydrogen evolution overpotential and TPC(tripotasium citrate)/CaO formed fine film on aluminum surface, and these additives decreased hydrogen evolution rate and corrosion rate of aluminum. These additives shifted the OCP in the positive direction on high purity aluminum(purity, 99.999%) and in the negative direction on Al No 1050(purity,99.5%). Addition of two or more additives resulted in the prevention or the reduction of corrosion rate and hydrogen evolution at OCP. As the overpotential on Al electrode increased, the hydrogen evolution rate decreased and the utilization of aluminum increased. At high current density$(>100mA/cm^2)$, TPC/CaO/ZnO additives increased the utilization of high purity aluminum up to that of aluminum alloys containing indium, gallium and thallium.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.592-598
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• 1998

AZO(Aluminum doped Zinc Oxide) thin films were fabricated by reactive DC magnetron sputtering method using zinc metal target (Al 2%) and zinc oxide target ($Al_2O_3\;2%$) respectively. The intermediate condition with optimum transmittance and conductivity was obtained by controlling the sputtering parameters. Oxygen gas ratio for this condition was $0.5{\times}10^{-2}~1.0{\times}10^{-2}$ in oxide target and. In case of metal target, this optimum oxygen gas ratio at the applied power of 0.6 kW and 1.0 kW was 0.215~0.227 and 0.305~0.315, respectively. The resistivity of AZO film deposited was obtained $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}$cm as deposited state regardless of target species.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.89-94
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• 1996

Aluminum and zinc titanium silicate sol-gel films were fabricated for application of waveguide and the effect of additions of ZnO and $Al_2O_3$ to binary titanium silicate films was investigated. During firing, the films are densified as they shrunk and their refractive index increases in the range of 1.58-1.83 depending on the film composition. The attenuation of the waveguides is not sensitive to changes in composition except for zinc titanium silicate waveguides which have substantially higher attenuation. However, the increase in the attenuation with aging of the waveguides depend upon the composition of waveuides. The addition $Al_2O_3$ or the reduced $SiO_2$ content in the composition appears to slow the deterioration of the waveguides due to the formation of more stable bonds and increased acidity on the film surface. Also, the wavelength dependence of the attenuation of the waveguides varies with composition. The attenuation of the waveguides except for the $65SiO_2{\cdot}35TiO_2$ composition are not Rayleigh scatter limited, suggesting the absorption loss of the waveguides due to the effects of residual carbon and structural defects in the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.699-700
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• 2013

Aluminum and hydrogen doped zinc oxide (AZHO) films were prepared by r.f. magnetron sputtering. The structural, electrical, and optical properties of the AHZO films were investigated in terms of the annealing conditions to study the thermal stability. The XRD measurements revealed that the degree of c-axis orientation was decreased and the crystallintiy of the films was deteriorated by the heat treatment. The electrical resistivity was significantly increased when the films were annealed at higher temperature. Although the optical transmittance of AHZO films didn't highly changed by heat treatment, the optical band gap was reduced, regardless of annealing temperature and duration. The thermal stability of AHZO films was worse compared to AZO films.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1542-1545
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• 2005

Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on corning 1737 glass by DC magnetron sputter. The structural, electrical and optical properties of the films were investigated as a function of various substrate temperatures. AZO thin films were fabricated by dc magnetron sputtering with AZO ceramic target $(Al_2O_3: 2wt %)$. The obtained films were poly crystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity is $6.0{\times}10^{-4}$ Ocm with the carrier concentration of $2.694{\times}10^{20}\;cm^{-3}$ and Hall mobility of $20.426cm^2/Vs$. The average transmittance in the visible range was above 90%.

• Journal of Electrical Engineering and Technology
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• v.8 no.1
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• pp.163-167
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• 2013

Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1149-1150
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• 2015

In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.346-350
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• 2006

Al-doped ZnO (AZO) thin films were grown on type of glass#1737 substrates by DC magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various plasma discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was $6.0{\times}10^{-4}{\Omega}cm$ with the carrier concentration of $2.69{\times}10^{20}cm^{-3}$ and Hall mobility of 20.43 $cm^2/Vs$. The average transmittance in the visible range was above 90%.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.