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http://dx.doi.org/10.5370/JEET.2013.8.1.163

Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating  

Jun, Min-Chul (Dept. of Electronic materials Engineering, Kwangwoon University)
Koh, Jung-Hyuk (Dept. of Electronic materials Engineering, Kwangwoon University)
Publication Information
Journal of Electrical Engineering and Technology / v.8, no.1, 2013 , pp. 163-167 More about this Journal
Abstract
Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.
Keywords
Al-doped ZnO; Transparent conducting oxide; Sol-Gel process; Thin films;
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