• 전기화학회지
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• 제3권4호
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• pp.204-210
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• 2000

용융아연 도금 강판 제조시 용융아연 도금 bath중의 알루미늄 농도를 조절하는 것은 매우 중요하다 본 연구의 목적은 용융아연 도금욕 중 알루미늄 농도를 신속하게 측정할 수 있는 센서 개발을 위한 기초 data를 제공하는 것이다. $CaF_2$고체전해질과 3가지 종류의 참조극을 사용하여 $460^{\circ}C\~500^{\circ}C$의 순수한 용융아연 bath에서 불소포텐샬을 측정하였다. 용융 아연 중 알루미늄의 농도를 측정하기 위하여 다음과 같은 불소 이온 농담전지 센서를 구성하였다. $$(-)W|Zn-Al,\;AlF_3|CaF_2|Bi,BiF_3|W(+)$$ 알루미늄의 농도가 $0.984wt\%$이하인 Zn-Al bath의 온도를 $460\pm10^{\circ}C$로 유지하고 상기의 알루미늄 농도 센서를 이용하여 기전력을 측정하였다. 측정된 기전력 값으로부터 최소 자승 회귀분석법을 이용하여, 다음과 같은 알루미늄 농도와 기전력과의 관계식을 얻었다. $$E/mV=56.795log[\%Al]+1881.7\;R=0.9704$$,$$0.026wt\%{\leq}[\%Al]{\leq}0.984wt\%$$

• 공업화학
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• 제9권1호
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• pp.52-57
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• 1998

알루미늄-공기전지의 4M KOH전해질에 아연화합물과 같은 첨가제를 넣어 수소발생 및 알루미늄의 부식에 미치는 영향을 검토하였다. 첨가제중의 아연화합물은 수소발생과전압을 증가시키고, TPC(tripotasium citrate)와 CaO는 알루미늄표면에 치밀한 막을 형성하여 수소발생속도와 알루미늄부식속도를 감소시켰다. 이들 첨가제들에 의해 고순도알루미늄(순도, 99.999%)의 개회로전위는 양의 방향으로, 알루미늄 No 1050(순도, 99.5%)의 개회로전위는 음의 방향으로 약간 이동했다. 개회로전위에서 첨가제는 수소발생속도와 알루미늄 부식속도를 감소시켰으며, 과전압이 증가할수록 수소발생속도가 감소하여 알루미늄의 이용율이 증가하였다. 높은 전류밀도$(>100mA/cm^2)$에서는 TPC/CaO/ZnO 첨가제에 의해 고순도 알루미늄의 이용율이 In,Ga,Tl 합금 알루미늄의 이용율과 비슷하였다.

• 한국결정성장학회지
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• 제8권4호
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• pp.592-598
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• 1998

ZnO($Al_2O_3\;2%$ 2% doped) 산화물 타겟과 금속 Zn(Al 2% doped) 타겟을 사용하여 반응성 직류 마그네트론 스퍼터링법으로 산소 가스 및 인가 전력을 조절하면서 AZO(Aluminum doped Zine Oxide) 막을 증착하였다. 비저항과 평균 투과율을 고려할 때 최적의 투명전도성을 보이는 조건은 산화물 타겟의 경우 산소가스의 비가 $0.5{\times}10^{-2}~1.0{\times}10^{-2}$범위이며, 금속 타겟의 경우 인가전력 0.6kW에서는 0.215~0.227, 1.0kW에서는 0.305~0.315이었다. 각 최적조건에서 제막된 AZO 막의 비저항은 $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}cm$cm으로 타겟에 의한 차이는 없었다.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.89-94
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• 1996

Aluminum and zinc titanium silicate sol-gel films were fabricated for application of waveguide and the effect of additions of ZnO and $Al_2O_3$ to binary titanium silicate films was investigated. During firing, the films are densified as they shrunk and their refractive index increases in the range of 1.58-1.83 depending on the film composition. The attenuation of the waveguides is not sensitive to changes in composition except for zinc titanium silicate waveguides which have substantially higher attenuation. However, the increase in the attenuation with aging of the waveguides depend upon the composition of waveuides. The addition $Al_2O_3$ or the reduced $SiO_2$ content in the composition appears to slow the deterioration of the waveguides due to the formation of more stable bonds and increased acidity on the film surface. Also, the wavelength dependence of the attenuation of the waveguides varies with composition. The attenuation of the waveguides except for the $65SiO_2{\cdot}35TiO_2$ composition are not Rayleigh scatter limited, suggesting the absorption loss of the waveguides due to the effects of residual carbon and structural defects in the films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.699-700
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• 2013

Aluminum and hydrogen doped zinc oxide (AZHO) films were prepared by r.f. magnetron sputtering. The structural, electrical, and optical properties of the AHZO films were investigated in terms of the annealing conditions to study the thermal stability. The XRD measurements revealed that the degree of c-axis orientation was decreased and the crystallintiy of the films was deteriorated by the heat treatment. The electrical resistivity was significantly increased when the films were annealed at higher temperature. Although the optical transmittance of AHZO films didn't highly changed by heat treatment, the optical band gap was reduced, regardless of annealing temperature and duration. The thermal stability of AHZO films was worse compared to AZO films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1542-1545
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• 2005

Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on corning 1737 glass by DC magnetron sputter. The structural, electrical and optical properties of the films were investigated as a function of various substrate temperatures. AZO thin films were fabricated by dc magnetron sputtering with AZO ceramic target $(Al_2O_3: 2wt %)$. The obtained films were poly crystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity is $6.0{\times}10^{-4}$ Ocm with the carrier concentration of $2.694{\times}10^{20}\;cm^{-3}$ and Hall mobility of $20.426cm^2/Vs$. The average transmittance in the visible range was above 90%.

• Journal of Electrical Engineering and Technology
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• 제8권1호
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• pp.163-167
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• 2013

Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1149-1150
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• 2015

In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.

• 한국재료학회지
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• 제16권6호
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• pp.346-350
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• 2006

Al-doped ZnO (AZO) thin films were grown on type of glass#1737 substrates by DC magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various plasma discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was $6.0{\times}10^{-4}{\Omega}cm$ with the carrier concentration of $2.69{\times}10^{20}cm^{-3}$ and Hall mobility of 20.43 $cm^2/Vs$. The average transmittance in the visible range was above 90%.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.