• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제51권3호
• /
• pp.111-114
• /
• 2002

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

• Restorative Dentistry and Endodontics
• /
• 제13권1호
• /
• pp.41-52
• /
• 1988

The purpose of this study was to investigate the pulpal responses to acid etching of dentine. Total 72 class V cavaties' were prepared on the healthy permanent teeth from 6 dogs, and were divided into 4 groups. These were filled with filling materials after acid etching with each etchant for 1 min. Control group ; ZOE filling without acid etching. Group 1: Zinc Oxide-Eugenol cement filling. Group 2: Drying with hot air and Zinc oxide-Eugenol cement filling. Group 3: Scotchbond application and silux filling. Group 4: Silux filling. The dogs were sacrificed after 1 week, 2 weeks, 3 weeks, 4 weeks, 5 weeks and 6 weeks following operation. The specimens were routinely prepared and stained with Hematoxylin and Eosin. Followings were the results obtained through microscopic examination. 1. There was mostly severe pulpal responses in case of Silux filling after acid etching of dentine. 2. The pulpal responses of Silux filling after acid etching and application of Scotch bond group were more severe compared to Zinc Oxide-Eugenol cement filling group, but less severe compared to Silux filling group after acid etching of dentine. 3. The pulpal responses of Zinc Oxide-Eugenol cement filling group were similar to those of Zinc Oxide-Eugenol cement filling after drying with hot air group. 4. There was slight pulpal responses in early stage in case of Zinc Oxide-Eugenol cement filling group, but recovered to normal state soon after.

• 한국전기전자재료학회논문지
• /
• 제27권3호
• /
• pp.146-150
• /
• 2014

As a method of simple patterning of transparent conductive oxide (TCO) films deposited on flexible substrates, laser direct etching was carried out on TCO films sputtered on polycarbonate (PC) substrates. As a result of different binding energies in TCO films, indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) were more easily etched than zinc oxide with different $Nd:YVO_4$ laser beam conditions.

• Transactions on Electrical and Electronic Materials
• /
• 제14권4호
• /
• pp.216-220
• /
• 2013

The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

• Restorative Dentistry and Endodontics
• /
• 제10권1호
• /
• pp.7-16
• /
• 1984

The purpose of this study was to investigate the pulpal responses to adhesive resins as phosphoric ester system: "Clearfil F II" (Composite filling material), "Panavia EX" (Composite cementing Material) and "Silar" (Microfilled Compsoite resin) comparing with Zinc-Oxide-Eugenol cement. Total 70 cavities of the permanent healthy teeth from 5 dogs were prepared and placed with experimental resins and Zinc-Oxide-Eugenol cement as control. The dogs were sarificed at 5 intervals of 3 days, one, two, four, six weeks. The specimens were routinely prepared and stained by Hematoxylin-Eosin. Followings were the results obtained through microscopic examination. 1. In cases of Clearfil F II and Panavia EX without etching and lining, pulp response in the early stage showed more severe vascular congestion and hemorrhage than that of Zinc-Oxide-Engenol cement. 2. The pulp response of totally etched cases was similar to that of unetched cases in the groups of Clearfil F II and Panavia EX. 3. The cases of Clearfil F II and Panavia EX with enamel etching showed no significant histologic change compared to that of total cavity etching. 4. The Silar case with total etching showed retarded tendency of histologic recovery compared to Clearfil F II and Panavia EX group. 5. Generally, pulp responses of experimental groups were not severe and the six week case showed the evidence of a histologic recovery.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.1408-1411
• /
• 2009

This paper describes organic acid-based wet chemical etching behaviors of amorphous Ga-doped zinc oxide (GZO) thin film sputter-deposited at low temperature (room temperature). Wet etch parameters such as etching time, temperature, and etchant concentration are investigated for formic and citric acid etchants, and their effects on the etch rate, etch residue and the feature of edge line are compared.

• Transactions on Electrical and Electronic Materials
• /
• 제11권3호
• /
• pp.116-119
• /
• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Journal of information and communication convergence engineering
• /
• 제9권4호
• /
• pp.461-465
• /
• 2011

An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.

• Transactions on Electrical and Electronic Materials
• /
• 제12권2호
• /
• pp.60-63
• /
• 2011

We investigated the etching characteristics of zinc oxide (ZnO) and the effect of additive gases in a $Cl_2$-based inductively coupled plasma. The inert gases were argon, nitrogen, and helium. The maximum etch rates were 44.3, 39.9, and 37.9 nm/min for $Cl_2$(75%)/Ar(25%), $Cl_2$(50%)/$N_2$(50%), and $Cl_2$(75%)/He(25%) gas mixtures, 600 W radiofrequency power, 150 W bias power, and 2 Pa process pressure. We obtained the maximum etch rate by a combination of chemical reaction and physical bombardment. A volatile compound of Zn-Cl. achieved the chemical reaction on the surface of the ZnO thin films. The physical etching was performed by inert gas ion bombardment that broke the Zn-O bonds. The highly oriented (002) peak was determined on samples, and the (013) peak of $Zn_2SiO_4$ was observed in the ZnO thin film sample based on x-ray diffraction spectroscopy patterns. In addition, the sample of $Cl_2$/He chemistry showed a high full-width at half-maximum value. The root-mean-square roughness of ZnO thin films decreased to 1.33 nm from 5.88 nm at $Cl_2$(50%)/$N_2$(50%) plasma chemistry.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.831-833
• /
• 2008

150 nm thick Ga-doped ZnO thin film, which was deposited by a sputtering process, was wet-chemically etched by using various organic acids such as oxalic, citric and formic acid. Wet etch parameters including etchant concentration and temperature are investigated for each etchant, and their effects on the etch rate and the feature of edge line are compared.