• Journal of Magnetics
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• v.11 no.1
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• pp.16-19
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• 2006

$2-\mu{m}$ thick GaN epilayer was prepared, and 80 KeV $Co^{-}$ ions with a dose of $3X10^{16}\;cm^{-2}$ were implanted into GaN at $350^{\circ}C$. The implanted samples were post annealed at $700^{\circ}C$. We have investigated the magnetic and structural properties of Co ion-implanted GaN by various measurements. HRXRD results did not show any peaks associated with second phase formation and only the diffraction from the GaN layer and substrate structure were observed. SIMS profiles of Co implanted into GaN before and after annealing at $700^{\circ}C$ have shown a projected range of $\sim390\AA$ with 7.4% concentration and that there is little movement in Co. AFM measurement shows the form of surface craters for $700^{\circ}C$-annealed samples. The magnetization curve and temperature dependence of magnetization taken in zero-field-cooling (ZFC) and field-cooling (FC) conditions showed the features of superparamagnetic system in film. XPS measurement showed the metallic Co 2p core levels spectra for $700^{\circ}C$-annealed samples. From this, it could be explained that magnetic property of our films originated from Co magnetic clusters.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Journal of Satellite, Information and Communications
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• v.12 no.4
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• pp.131-140
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• 2017

Multipath TCP (MPTCP) is a transport layer protocol that simultaneously transmits data using multiple interfaces. MPTCP is superior to existing TCP in network environment with homogeneous subflows, but it shows worse performance compared to existing TCP in network environment with bufferbloat. If a bufferbloat occurs in one of the MPTCP multipaths, the packet will not arrive at the MPTCP receive buffer due to a sudden increase in delay time, resulting in a HoL blocking phenomenon. It makes the receive window of the other path to be zero. In this paper, we apply Adaptive Random Early Detection (ARED), Controlled Delay (CoDel) and Proportional Integral Controller Enhanced (PIE) among the proposed Active Queue Management (AQM) to limit the delay of bufferbloat path. Experiments were conducted to improve the performance of MPTCP in heterogeneous networks. In order to carry out the experiment, we constructed a Linux-based testbed and compared the MPTCP performance with that of the existing droptail.

• Wind and Structures
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• v.30 no.6
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• pp.633-648
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• 2020

The objective of this work was to investigate the interference effects of two-parallel bridge decks on aerodynamic coefficients, vortex-induced vibration, flutter instability and flutter derivatives. The two bridges have significant difference in cross-sections, dynamic properties, and flutter speeds of each isolate bridge. The aerodynamic static tests and aeroelastic tests were performed in TU-AIT boundary layer wind tunnel in Thammasat University (Thailand) with sectional models in a 1:90 scale. Three configuration cases, including the new bridge stand-alone (case 1), the upstream new bridge and downstream existing bridge (case 2), and the downstream new bridge and the upstream existing bridge (case 3), were selected in this study. The covariance-driven stochastic subspace identification technique (SSI-COV) was applied to identify aerodynamic parameters (i.e., natural frequency, structural damping and state space matrix) of the decks. The results showed that, interference effects of two bridges decks on aerodynamic coefficients result in the slightly reduction of the drag coefficient of case 2 and 3 when compared with case 1. The two parallel configurations of the bridge result in vortex-induced vibrations (VIV) and significantly lower the flutter speed compared with the new bridge alone. The huge torsional motion from upstream new bridge (case 2) generated turbulent wakes flow and resulted in vertical aerodynamic damping H1^* of existing bridge becomes zero at wind speed of 72.01 m/s. In this case, the downstream existing bridge was subjected to galloping oscillation induced by the turbulent wake of upstream new bridge. The new bridge also results in significant reduction of the flutter speed of existing bridge from the 128.29 m/s flutter speed of the isolated existing bridge to the 75.35 m/s flutter speed of downstream existing bridge.

• Carbon letters
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• v.5 no.4
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• pp.164-169
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• 2004

Carbon-ceramic composites refer to a special class of carbon based materials which cover the main drawbacks of carbon, particularly its proneness to air oxidation, while essentially retaining its outstanding properties. In the present paper, the authors report the results of a systematic study made towards the development of C-SiC-$B_4C$ composites, which involves the effects of compositional parameters, namely, carbon-to-ceramic and ceramic-to-ceramic ratios, on the oxidation behaviour as well as other characteristics of these composites. The C-SiC-$B_4C$ composites, heat-treated to $1400^{\circ}C$, have shown that their oxidation behaviour at temperatures of 800~$1200^{\circ}C$ depends jointly on the total ceramic content and the SiC : $B_4C$ ratio. Good compositions of C-SiC-$B_4C$ composites exhibiting zero weight loss in air at temperatures of 800~$1200^{\circ}C$ for periods of 4~9 h, have been identified. Composites with these compositions undergo a weight gain or a maximum weight loss of less than 3% during the establishment of a protective layer at the surface of carbon in a period of 1~6 h. Significant improvement in the strength of C-SiC-$B_4C$ composites has been observed which increases with an increase in the total ceramic content and also with an increase in the SiC : $B_4C$ ratio.

• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.6A
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• pp.577-582
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• 2008

In this paper, we present a scheme to overcome the worst case complexity of the sphere decoder. If the number of visited nodes reaches the threshold, the detected symbol vector is determined between two candidate symbol vectors. One candidate symbol vector is obtained from the demodulated output of ZF receiver which is initial stage of the sphere decoder. The other candidate symbol vector consists of two sub-symbol vectors. The first sub-symbol vector consists of lately visited nodes running from the most upper layer. The second one contains corresponding demodulated outputs of ZF receiver. Between these two candidate symbol vectors, the one with smaller euclidean distance to the received symbol vector is chosen as detected symbol vector. In addition, we show the upper bound of symbol error rate performance for the sphere decoder using the proposed scheme. In the simulation, the proposed scheme shows the significant reduction of the worst case complexity while having negligible SER performance degradation.

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.171-171
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• 2000

차세대 반도체 제조에서 Design rule 이 점점 더 shrink 됨에 따라 shallow junction 분석의 중요성이 강조되고 있다. 이러한 shallow junction에 대한 분석방법중의 하나인 SIMS 분석에 있어서 depth resolution을 향상시키는 것이 중요하며, 일차이온의 에너지를 낮추어 줌으로써 이러한 효과를 달성할 수 있다. 그러나 최근의 연구에 따르면 O2+를 이용한 low energy SIMS 분석 시에 non-zero incidence angle로 분석할 경우 surface roughness가 발생한다는 사실이 보고되었으며, surface roughness를 줄이고 분석 초기의 transient region을 줄이기 위한 방법으로 oxygen flooding을 사용하는 경우 특정 각도에서 surface roughness가 여전히 존재할 뿐 아니라 분석 초기영역에서의 sputter rate이 변화하는 문제가 있음이 보고된바 있다. 본 연구에서는 2keV O2+ 일차이온을 이용하여 oxygen flooding 하에서 기존 조건인 60도 incidence로 분석하는 방법의 문제점을 파악하고 incidence angle을 45도로 바꾸어 분석하는 방법을 검토하였다. 그 결과 기존의 분석조건에서는 분석도중 표면부근에서 sputter rate이 변화하고 surface roughness가 증가하는 것을 확인하였고, 그로 인하여 oxygen flooding을 하지 않은 경우와 많은 차이가 발생하는 것을 발견하였다. Incidence angle을 45도로 바꾼 결과 이러한 문제가 해결되는 것을 확인하였으며, 특히 GaAs $\delta$layer 분석을 통하여 이 분석조건이 기존의 분석조건에 비하여 획기적으로 향상되는 것을 확인 할 수 있었다. 또한 여러 가지 shallow junction 분석을 통하여 이 분석방법이 상당히 신뢰성이 있음을 알 수 있었다. 그러나 여전히 oxygen flooding을 하지 않은 경우에 비하여 다소간의 차이가 있는 것이 발견되었는데, 이는 주로 표면에 잔존하는 산화막에 의한 효과와 oxygen flooding에서 보다 더 depth resolution이 좋음으로 인하여 발생하는 것으로 추정되었으며 그 밖에 다른 가능성도 제기되었다. 따라서 이 방법은 표면 산화막이 거의 없는 시료에 대하여 적용한다면 oxygen flooding을 하지 않은 경웨 비하여 transient region이 거의 없고 junction depth를 보다 신뢰성 있게 측정할 수 잇는 장점이 있는 것으로 판단되었다. As, P의 저 에너지이온 주입시료에 대해 이 분석방법을 적용할 경우 C+s 분석법에 비하여 depth resolution을 비교적 쉽게 향상시킬 수 있었고, oxygen follding을 쓰지 않은 경우에 비해서는 검출한도를 약 100배 정도 향상시킬 수 있었다. 그러나 2.5keV Cs+ 분석법에 비하면 아직 depth resolution이 불충분하여 실제로 shallow As 분석에 적용하기에는 다소 문제점이 있었다.