• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.323-324
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• 2007

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.24-27
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

• Mycobiology
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• v.32 no.3
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• pp.128-133
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• 2004

Twenty plant extracts were tested against mycelial growth, sclerotium formatiom and dry weight of mycelium with sclerotia of Sclerotium rolfsii Sacc. The highest(90 mm) mycelial growth was measured in Adhatoda vasica, Tegetes erecta, Allium cepa, and Curcuma longa. The lowest(25 mm) was in Azadirachta indica. No mycelial growth was found in any concentration of cow, buffalo, and goat urine. The highest(90 mm) and the lowest(15 mm) mycelial growth were measured in Biomil and Urea, respectively. No mycelial growth was observed in Zinc. The highest(60 mm) and the lowest(2 mm) mycelial growth were recorded in Macuprex(Dodine; 65% WP) and Boron(100% Boric acid and 17% Boron) respectively. Mycelial growth was totally inhibited in Rovral(Iprodione; 50% WP).

• Journal of Welding and Joining
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• v.34 no.4
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• pp.48-54
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• 2016

The use of Zn coated steel has increased in the automotive industry due to its excellent corrosion resistance. Conventionally the BIW(body-in-white) structure and the hang-on parts have been made of Zn coated steel and more recently Zn coated steel began to be applied in the chassis parts. During gas metal arc (GMA) welding of the chassis part, lap fillet joint used to be adopted but spatter generation and porosities are most important concerns. In the industrial applications, an intentional joint gap was made to avoid the weld defects but it is not easy to control the size of joint gap. In this research, gas tungsten arc (GTA) is combined with GMA welding where GTA precedes GMA. As pulsed arc was adopted as GMA, GTA was oscillated along the longitudinal direction by pulsing GMA, but the arc oscillation did not disturb the molten droplet transfer of GMA welding. By increasing the distance between GTA and GMA, the length of weld pool increased and porosity could be reduced. Moreover porosity in the welds was fully removed when the distance between two arcs was 15 mm.

• Nuclear Engineering and Technology
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• v.49 no.5
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• pp.996-1005
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• 2017

In this paper, nuclear data for cross sections of the $^{64}Zn(n,2n)^{63}Zn$, $^{64}Zn(n,3n)^{62}Zn$, $^{64}Zn(n,p)^{64}Cu$, $^{66}Zn(n,2n)^{65}Zn$, $^{66}Zn(n,p)^{66}Cu$, $^{67}Zn(n,p)^{67}Cu$, $^{68}Zn(n,p)^{68}Cu$, and $^{68}Zn(n,{\alpha})^{65}Ni$ reactions were studied for neutron energies up to 40 MeV. In the nuclear model calculations, TALYS 1.6, ALICE/ASH, and EMPIRE 3.2 codes were used. Furthermore, the nuclear data for the (n,2n) and (n,p) reaction channels were also calculated using various cross-section systematics at energies around 14-15 MeV. The code calculations were analyzed and obtained using the different level densities in the exciton model and the geometry-dependent hybrid model. The results obtained from the excitation function calculations are discussed and compared with literature experimental data, ENDF/B-VII.1, and the TENDL-2015 evaluated data.

• Korean Chemical Engineering Research
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• v.61 no.2
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• pp.322-327
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• 2023

A design of experiments was evaluated in optimizing MOF-5 synthesis for acetylene adsorption. At first, mixture design was used to optimize precursor concentration, terephthalic acid, zinc acetate dihydrate and N,N-dimethylformamide. More specifically, 13 conditions with various molar ratios were designed by extreme vertices design method. After preparing the samples, XRD, N₂ physisorption and SEM analysis were performed for their characterization. Moreover, acetylene adsorption experiments were carried out over the samples under identical conditions. The optimal precursor composition for MOF-5 synthesis was predicted on a molar basis as follows: terephthalic acid : acetate dihydrate : dimethylformamide = 0.1 : 0.4 : 0.5. Thereafter, multi-level factorial design was designated to investigate the effect of synthesis reaction conditions such as temperature, time and stirring speed. By the statistical analysis of 18 samples designed, 4 reaction parameters were determined for additional adsorption experiments. Therefore, MOF-5 prepared under the synthesis time and temperature of 100 ℃ and 12 h, respectively, showed the maximum adsorption capacity of 15.1 mmol/g.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.245-245
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• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.3
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• pp.283-288
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• 2007

In order to elucidate the relationship between the sludge retention time(SRT) and the toxicity of heavy metals, such as copper (Cu), cadmium(Cd), and zinc(Zn), in sequencing batch reactor(SBR) process, IC50 was estimated with measuring of INT-dehydrogenase activity in variable SRTs. When the concentrations of heavy metals were increased, the activity of INT-dehydrogenase was gradually decreased indicating the heavy metals inhibit bacterial activity. Cu showed higher toxicity than Zn and Cd. $IC_{50}$ of Cu, Cd, and Zn ranged from $0.37\sim1.96$ mg/L, $15.4\sim16.9$ mg/L, and $9.70\sim23.4$ mg/L, respectively. The toxicity of Cu and Zn was reversely proportional to the length of SRT. It is probably caused by the increased concentration of extracellular polymeric substances in longer SRT which absorb heavy metals. Therefore, the operation of SBR with increased SRT is desirable in treatment of industrial wastewater containing heavy metals.

• Journal of the Korea Convergence Society
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• v.9 no.4
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• pp.321-329
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• 2018

This study was attempted to provide data for establishing appropriate guidelines and control standards for accurate information and production of dyes and pigments through the analysis of representative heavy metals and other metals used in cosmetic tattoos. A total of 30 tattoo products for cosmetics were selected from among the representative heavy metals such as arsenic, antimony, cobalt, cadmium, copper, lead, zinc, barium, tin, selenium, chromium and magnesium, manganese(15kinds) were analyzed. As a result of examining the contents of heavy metals in dyes and pigments used in cosmetic tattoo products, it was found that the total of 20products(66.7%) exceeded the reference value and found to be unsuitable for safety standards. It is suggested that the guidance of the specialized agency for safe procedures, appropriate control controls and standards for the dyes and pigments used, and the potential risks of heavy metals are needed.

• Korean Journal of Soil Science and Fertilizer
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• v.28 no.4
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• pp.295-300
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• 1995

In order to find out the natural content of heavy metals(Cd, Cu, Pb, Zn, Cr, Ni)in paddy soil of Korea, a total of 1,196 soil samples of 15cm top layers all over the country 1995 were collected and analyzed. The average heavy metal contents in soils were 0.133mg/kg of Cd, 4.52mg/kg of Cu, 4.62mg/kg of Pb, 3.90mg/kg of Zn, 0.362mg/kg of Cr and 1.38mg/kg of Ni. These results are similar to the results of survey conducted in 1981.