• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.174-174
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• 2003

Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.606-610
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• 1995

In this study, Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ stock solution was made and spin-coated on the Pt/ $SiO_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were chied at 400[.deg. C] for 10[min]. The coating process was repeated 6 times and then heat-treated at 500-800[.deg. C] and 1 hour. The final thickness of the thin films were about 4800[.angs.]. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hour. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films sintered at 700[.deg. C] for 1 hour showed good dielectric and ferroelectric properties.

• East Asian mathematical journal
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• v.32 no.1
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• pp.27-33
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• 2016

Generalized $H{\ddot{o}}lder$ inequality developed by H. Qiang and Z. Hu is further refined. Also, generalized$H{\ddot{o}}lder$ inequality developed by X. Yang is further refined.

• Bulletin of the Korean Chemical Society
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• v.17 no.9
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• pp.802-807
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• 1996

Second-order rate constants have been measured spectrophotometrically for the reactions of aryl benzoates (X-C6H4CO2C6H4-Y) with EtO-, Z-C6H4O- and Z-C6H4C(Me)=NO- in absolute ethanol at 25.0 ℃. All the reactions have been performed in the presence of excess 18-crown-6 ether in order to eliminate the catalytic effect shown by alkali metal ion. A good Hammett correlation has been obtained with a large ρ- value (-1.96) when σ- (Z) constant was used for the reaction of p-nitrophenyl benzoate (PNPB) with Z-C6H4O-. Surprisingly, the one for the reaction of PNPB with Z-C6H4C(Me)=NO- gives a small but definitely positive ρ- value (＋0.09). However, for reactions of C6H5CO2C6H4-Y with EtO-, correlation of log k with σ- (Y) constant gives very poor Hammett correlation. A significantly improved linearity has been obtained when σ0 (Y) constant was used, indicating that the leaving group departure is little advanced at the TS of the RDS. For reactions of X-C6H4CO2C6H4-4-NO2 with EtO-, C6H5O- and C6H5C(Me)=NO-, correlations of log k with σ (X) constants for all the three nucleophile systems give good linearity with large positive ρ values, e.g. 2.95, 2.81 and 3.06 for EtO-, C6H5O- and C6H5C(Me)=NO-, respectively. The large ρ values clearly suggest that the present reaction proceeds via a stepwise mechanism in which the formation of the addition intermediate is the RDS.

• Kyungpook Mathematical Journal
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• v.52 no.1
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• pp.33-38
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• 2012

The purpose of the present paper is to investigate mapping properties of an integral operator in which we show that the function g defined by $$g(z)=\{\frac{c+{\alpha}}{z^c}{\int}_{o}^{z}t^{c-1}(D^nf)^{\alpha}(t)dt\}^{1/{\alpha}}$$. belongs to the class $S(A,B)$ if $f{\in}S(n,A,B)$.

• Analytical Science and Technology
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• v.17 no.3
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• pp.282-288
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• 2004

Inclusion selectivities of the cyanocadmate host complexes with ammonium oniums, $[Cd_x(CN)_{2x}][onium{\cdot}zG]$ (onium = $NMe_3Et^+$, $NMeEt{_3}^+$ and $NEt{_4}^+$, G = guest), have been investigated for $C_6H_6$ (B), PhMe (T), PhEt (E), ortho (O), meta (M), and para (P) isomers of $C_6H_4Me_2$ as the aromatic guest molecules. From the binary, ternary, quaternary and quinary mixed guests of B, T, E, O, M and P, the order of preference in the $NMe_3Et+$-host is $B{\gg}$T>P${\fallingdotseq}O{\fallingdotseq}M$ and E>O${\gg}P{\fallingdotseq}M$; in the $NMeEt{_3}^+$-host is T>B>P${\gg}O{\fallingdotseq}M$ and E>P${\gg}$M>O; in the $NEt{_4}^+$-host is $B{\gg}T{\fallingdotseq}O{\fallingdotseq}M{\fallingdotseq}P$. However, the $NEt{_4}^+$-host complexes of E, O, M and P mixed-guests were not obtained. These inclusion selectivities were compared to our previous results of the $NMe{_4}^+$-host; T>B>P${\gg}$M>O and E>P${\gg}$M>O.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.780-786
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• 1995

For the execution of RIETAN program adopting Rietveld Analysis Method, the sample superconductor is made according to the solid state synthesis method at 920.deg. C for 24hrs, and was examined for the optimization of parameters needed to analyze Rietveld method with the input of the measured pattern data after measuring the pattern resulted from the X-ray diffraction. It was proven that the lattice constant of the superconductor which was consisted of Pmmm orthorhombic crystal structure in the analyzed space group correspond to the presented theoretical lattice constant a=3.8887(8).angs., b=3.8238(4).angs., c=11.7079.angs.. Therefore, it was examined and confin-ned that the R factor, which was compensated after analyzing the structure of superconductor resulted from this experimented data with the computer simulation, was refined to $R_{wp}$=8.83[%], $R_{P}$=6.47[%], $R_{I}$=10.08[%], $R_{F}$=7.19[%], $R_{E}$=3.76[%]. On the basis of these experimental data, the significant parameter such as the scale factor(S) and the zero point shift(Z) and FWHM value(U,V,W) were optimized as follows; S=2.0827E-3, Z=0.2146, U=4.2761E-2, V=1.7983E-2, and W=2.6768E-2.2.2.2.2.2.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.294-299
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• 1994

CHF$_{3}$/CH$_{4}$Ar 플라즈마에 의해 형성된 산화막 식각 잔류물의 화학구조와 이 잔류물의 제거를 위한 세정방법을 x-ray photoelectron spectroscopy를 이용하여 조사하였다. 잔류무르이 구조는 CF$_{x}$-polymer와 Si-C, Si-O 결합으로 이루어진 SiO$_{y}$ C$_{z}$ 이었다. CF$_{4}$O$_{2}$ 플라즈마에 의한 silicon light etch는 산화막 식각 잔류물인 SiO$_{y}$ C$_{z}$ 층과 손상된 실리콘 표면을 제거하엿으며 NH$_{4}$OH-H$_{2}$O$_{2}$과 HF용액으로 완전히 제거되는 CF$_{x}$-polymer/SiO$_{x}$층을 남겼다. 100.angs.정도의 silicon light etch는 minority carrier life time과 thermal wave signal값을 초기 웨이퍼 수준까지 회복시켰으며 접합누설 전류도 거의 습식 식각 공정수준까지 감소시켰다.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.13-18
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• 1997

The effects of the various raw material composition and sintered temperature on the physical properties of Ni-Zn ferrite have been investigated. They turned out to be spinel structure by X-ray diffraction and the size of grain from microscope was from 6 ${\mu}{\textrm}{m}$ to 16 ${\mu}{\textrm}{m}$. As the sintering temperature was increased from 1030 $^{\circ}C$ to 1070 $^{\circ}C$, the initial permeability and magnetic induction has increased and the both of Q factor and coercive force has decreased. The coercive force and curie temperature were almost the same at each specimen. Their values were about 0.20 Oe and 220 $^{\circ}C$. The frequency of specimen will used in the range from 400 kHz to 20 MHz. The basic composition of $Ni_{0.14}Zn_{0.64}Cu_{0.22}Fe_2O_4$ (specimen B) sintered at 1050 $^{\circ}C$ shows the best results at magnetic induction($B_r & B_m$).

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.74.2-74.2
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• 2012

Metallicity is an important tracer of star formation in galaxy evolution. Based on the flux ratios of broad emission lines, AGN metallicity has shown a correlation with AGN luminosity. However, it is not clear what physical parameter drives the observed correlation. Using a sample 69 Palomar-Green QSOs at low-z (z<0.5), we determine BLR gas metallicity from emission line flux ratios, i.e., N V1240/C IV1549, (Si IV1398+O IV1402)/C IV1549 and N V1240/He II1640 based on the UV spectra from the HST and IUE archives. We compare BLR gas metallicity with various AGN properties, i.e., black hole mass, AGN luminosity and Eddington ratio, in order to investigate physical connection between metal enrichment and AGN activity. In contrast to high-z QSOs, which show the correlation between metallicity and black hole mass, we find that the metallicity of low-z QSOs correlates with Eddington ratio, but not with black hole mass, suggesting that metallicity enrichment mechanism is different between low-z and high-z.