• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.168-171
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• 2002

In this study. a solid-state laser system adopting a sequential discharge method in which three flashlamps are turned on sequently was designed and fabricated to examine the pulse width and the pulse shape of the laser beams depending upon the changes in the lamp turn-on time. That is, this study shows a technology that makes it possible to make various pulse shapes by turning on three flashlamps sequently with the aid of a PIC one-chip microprocessor. With this technique, the lamp turn-on delay time can be varied more diversely from a to lamp and the real-time control is possible with an external keyboard, enabling various pulse shapes. In addition, longer pulses can be more widely used for industrial processing and lots of medical purposes.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.191-193
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC-39vol.% $TiB_2$ and using 61vol.% SiC-39vol.% $ZrB_2$ powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the SiC-$TiB_2$, and SiC-$ZrB_2$ composites. The ${\beta}\;{\alpha}$-SiC phase transformation was occurred on the $SiC-TiB_2$, $SiC-ZrB_2$ composites. The relative density, the flexural strength and Young's modulus showed respectively value of 98.57%, 226.06Mpa and $86.37{\times}10^3Mpa$ in SiC-$ZrB_2$ composites.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.242-243
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• 2007

본 논문은 1310nm 단일모드 광섬유를 이용하여 온도센서로 활용하기 위한 연구이다. 기존광섬유센서의 연구는 복잡한 여러 가지 기기를 이용하여 구성된 시스템이었다. 그리고 산란 변화를 주기 위하여 Bragg 격자나 Pulse generator를 이용하여 광주파수의 변화를 측정하거나, YAG 레이저를 이용 벌크형 시스템을 택하여 구성하였는데 실험 환경을 구성하는 어려움과 측정된 데이터의 정확도에 대한 문제점이 있었다. 본 연구에서 제안한 유도 브릴루앙 산란(sBs: stimulated Brillouin scattering)광을 이용한 온도센서 시스템은 기존의 측정방식 보다 간소화된 직렬방식의 시스템이다. 광주파수에서 발생하는 노이즈와 애매한 결과에 대해서 신뢰성과 정확도를 확보하기 위하여 지능형인 뉴로-퍼지 알고리즘을 이용하여 분석함으로써 기존 시스템 보다 정확한 데이터를 얻고자 하였다. 본 연구에서 sBs는 빛의 산란 특성 중 광주파수가 온도에 변화에 대해 각각의 온도 변화당 천이가 이루어졌음을 측정하였다. 시스템에서 출력된 데이터를 뉴로-퍼지로 분석한 변화율은 1.1MHz/의 결과를 얻었다.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.88-89
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• 2007

ZnO thin films were deposited on $Al_2O_3$ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355nm, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200m Torr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, $600^{\circ}C$. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased foil width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature ($700^{\circ}C$).

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.94-95
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• 2007

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.3
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• pp.5-15
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• 2007

A welding structures is generally composed of dissimilar steel materials in order to reduce weight cost, and has a gap to fill the welding agent. Also, heat flow analysis should be fulfilled for structure existing of gap to figure out residual stress which is generated after welding. Since mechanical properties of welding structure composed of dissimilar steel is more fragile than mechanical properties of welding structure consisted of same material, heat flow analysis verifying this should be fulfilled as well. Therefore, on this research, heat flow analysis about dissimilar steel weldment consisted of gap existing AISI304 and AISI630 is practiced so that it could be a basic data of research about mechanical properties of gap existing dissimilar steel welding part which is going to be studied later on. During heat flow analysis, heat input model which based on Gaussian profile and using volume heat flux was newly consisted and applied. In addition, for verifying of analysis on this research, gap existing dissimilar steel weldment which had gap of 0.25mm and was welded using Nd-YAG. The welding profile and temperature distribution for weldment during welding was compared to the result which was gotten through heat flow analysis. Both of those results corresponded each other.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1289-1290
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• 2007

The composites were fabricated 61Vo.% ${\beta}$-SiC and 39Vol.% $TiB_2$ powders with the liquid forming additives of 12wt% $Al_{2}O_{3}+Y_{2}O_{3}$ as a sintering aid by pressure or pressureless annealing at $1650^{\circ}C$ for 4 hours. The present study investigated the influence of annealed sintering on the microstructure and mechanical of SiC-$TiB_2$ electroconductmive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ YAG($Al_{5}Y_{3}O_{12}$). The relative density, the flexural strength, the Young's modulus showed the highest value of 86.69[%], 136.43[MPa], 52.82[GPa] for pressure annealed SiC-$TiB_2$ ceramic composites.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.106-108
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• 2002

The composites were fabricated 61vol.% $\beta-SiC$ and 39vol.% $TiB_2$ powders with the liquid forming additives of l2wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1700^{\circ}C,\;1750^{\circ}C,\;1800^{\circ}C$ for 4 hours respectively. The result of Phase analysis of composites by XRD revealed $\alpha-SiC$(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the Young's modulus showed the highest value of 92.9701% and 92.884Gpa for composites by pressureless annealing temperature $1700^{\circ}C$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.32-35
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• 2006

For the white UV-LED applications, $Eu^{2+}$-activated calcium aluminium silicate phosphors were synthesized for the first time and the structures and luminescence characteristics of these phosphors were investigated. The phosphors in this study emitted blue. green or blue-green light depending on the starting materials for synthesis. In addition, the structure was also changed when the different starting materials were used. When CaO and $CaCO_3$ was used as a starting material. tetragonal $Ca_2Al_2SiO_7$ was formed and blue-green and pure green light was emitted. respectively. However. in the case of $CaSiO_3$, triclinic $CaAl_2Si2O_8$ was formed and only pure blue emission was detected. The maximum emission intensity was obtained from $CaAl_2Si_2O_8:Eu^{2+}$ phosphors, which intensity was about 1.4 times higher than that of YAG:$Ce^{3+}$ phosphor used for blue LED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.266-267
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• 2007

$Ba_{0.5}Sr_{0.5}TiO_3$(BST) films with different deposition temperatures were deposited on $Al_2O_3$ substrate by Nd:YAG Pulsed Laser Deposition(PLD). The deposition conditions to achieve high crystal structures and dielectric properties were optimized for both techniques. The structural characterization on the BST thin films was performed by X-Ray Diffraction(XRD) and Atomic Force Microscopy (AFM). Effects of post-deposition annealing of BST films were investigated. The best dielectric properties were obtained on $800^{\circ}C$ deposited BST film with post-deposition annealing at $1100^{\circ}C$ in flowing $O_2$ atmosphere for 2hours.