• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.531-534
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• 2004

초전도 coated conductor는 보호층/초전도층/완충층/금속기판의 구조를 가지며 완충층은 다층산화물 박막으로 이루어져 있다. 본 연구에서는 니켈 기판의 원자가 초전도층으로 확산 침투하는 것을 방지하는 YSZ(Yttria Stabilized Zirconia) 박막의 증착방법 및 최적조건에 대하여 소개하고자 한다. 금속타겟을 사용하며 산화반응가스로서 수증기를 사용하는 것을 특징으로 하는 DC reactive sputtering을 이용하여 YSZ를 증착하였으며 기판 온도는 $850^{\circ}C$ 이며 증착시 수증기 분압은 1mTorr이었다. YSZ의 최적두께를 알아보기 위하여 $CeO_2(12.2nm)/Ni$ 상부에 130nm, 260nm, 390nm, 650nm로 두께를 달리하여 YSZ층을 증착하고 SEM으로 박막 표면상태를 관찰한 결과 columnar grain growth를 하며 두께가 두꺼워 질수록 표면조도가 증가함을 알 수 있었다. 4개의 각 시료위에 thermal evaporation 증착법을 이용하여 $CeO_2$를 18.3nm의 두께로 증착한 후 PLD를 이용하여 YBCO 초전도 박막을 300nm 두께로 증착하였고 77K, 0T에서 임계전류가 각각 0, 6A, 7.5A, 5A로 측정되었다. 이는 YSZ층의 두께가 두꺼워질수록 기판 구성원자의 확산방지역할을 충실히 하는 반면에 표면조도는 증가함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.52-53
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• 2005

$Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.723-724
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• 2006

In this study, superconducting coil arrangements and cryostat concept design were conducted for the development of 13.2kV/630A bifilar winding type high temperature superconducting(HTS) fault current limiter(FCL) with YBCO coated conductor(CC) wire. The coil consists of several layers with unique non-inductive solenoid winding method. Six types of HTS coil arrangements were investigated for the optimal insulation design of HTS FCL. And, conceptual design of cryostat was conducted for the decrement of thermal invasion and the prevention of low voltage insulation breakdown in the LHe which is used as pressurization gas in sub-cooling condition of liquid nitrogen(LN2). As the results, it was found that the modified suspended type cryostat with horizontal coil arrangement is beneficial to the insulation design of 13.2kV level bifilar winding type HTS FCL.

• 한국초전도ㆍ저온공학회논문지
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• 제11권4호
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• pp.12-15
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• 2009

The $I_c$ degradation behavior of critical current in differently processed YBCO and SmBCO CC tapes with IBAD template has been investigated. It has been known that the residual strain in the CC tape will influence the shape of the $I_c$-strain window; $I_c$ may show a peak value if there exist a residual strain induced in the tape during manufacturing. The difference of residual strain may be resulted from the adopted different deposition techniques. In this study, bending test of CC tapes has been done using the Goldacker bending test rig which can produce both compressive and tensile bending strain continuously or alternately to the sample. For SmBCO CC tapes, in continuous compressive bending test, $I_c$ showed a minimal increase and did not degrade up to the largest strain that can be applied using the bending rig equivalent to 1.15% based on the sample thickness. However, in the case of alternate application of compressive and tensile bending strain, $I_c$ showed a larger degradation and a lower reversible limit when compared with the case of continuous application of the bending strain. When $I_c$ started to degrade significantly at the tension side, the reversibility ended, also at the compression side which is resulted from the permanent deformation like delamination or cracks that was induced due to tensile bending strain.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.9-12
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• 2004

We report a successful fabrication of high-$J_C$ $NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on (100) $SrTiO_3$ substrates by pulsed laser deposition (PLD) in high oxygen pressures ranging from 400 to 800 mTorr. Fabricated NdBCO films exhibited only c-axis orientation, good out-of-plane and in-plane textures, and also excellent superconducting properties, including critical temperature ($T_C$) and critical current density ($J_C$) of above 90 K and the highest of $3.1MA/cm^2$ at 77 K in self-field, implying that NdBCO is a perspective alternative to YBCO for coated conductor. In low oxygen pressures ranging from 100 to 200 mTorr, however, the films showed a-, c-mixed orientation and degraded $T_{C,zero}$ values due to the formation of $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$-type solid solutions with an excessive substitution of $Nd^{3+}$ ions for the $Ba^{2+}$ sites.

• Progress in Superconductivity
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• 제6권1호
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• pp.64-68
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• 2004

We fabricated cube-textured Ni and Ni-W alloy substrates for coated conductors and characterized the effects of W addition on microstructure, mechanical strength, and magnetic properties of the substrate. Pure Ni and Ni-(2, 3, 5at.%)W alloys were prepared by plasma arc melting, heavily cold rolled and then annealed at various temperatures of $600-1300^{\circ}C$. The texture was evaluated by pole-figure and orientation distribution function (ODF) analysis. Mechanical properties were investigated by micro Vickers hardness and tension test. Ferromagnetism of the substrate was measured by physical property measurement system (PPMS). It was observed that Ni-W substrates had sharp cube texture, and the full-width at half-maximums (FWHMs) of in-plane texture was $^{\circ}$-5.57$4.42^{\circ}$, which is better than that of pure Ni substrate. In addition cube texture of Ni-W substrates was retained at higher temperature up to $1300^{\circ}C$. Microstructural observation showed that the Ni-W substrates had fine grain size and higher mechanical properties than the pure Ni substrate. These improvements are probably due to strengthening mechanisms such as solid solution hardening and/or grain size strengthening. PPMS analysis showed that addition of W effectively reduced saturation magnetization in applied magnetic field and Curie temperature.

• Progress in Superconductivity
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• 제7권2호
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.