• 전자공학회논문지C
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• 제34C권12호
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• pp.20-27
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• 1997

In this paper, a multiplying digital-to-analog converter (MDAC) circuit for low-power high-resolution CMOS algorithmic A/D converters (ADC's) is proposed. The proposed MDAC is designed to operte properly at a supply at a supply voltge between 3 V and 5 V and employs an analog0domain power reduction technique based on a bias switching circuit so that the total power consumption can be optimized. As metal-to-metal capacitors are implemented as frequency compensation capacitors, opamps' performance can be varied by imperfect process control. The MDAC minimizes the effects by the circuit performance variations with on-chip tuning circuits. The proposed low-power MDAC is implementd as a sub-block of a 10-bit 200kHz algorithmic ADC using a 0.6 um single-poly double-metal n-well CMOS technology. With the power-reduction technique enabled, the power consumption of the experimental ADC is reduced from 11mW to 7mW at a 3.3V supply voltage and the power reduction ratio of 36% is achieved.

• 한국신뢰성학회지:신뢰성응용연구
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• 제2권1호
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• pp.1-14
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• 2002

High temperature operating test, temperature humidity test and temperature cycling were performed at various test levels for solid aluminum electrolyte capacitors made by domestic manufacturing company and foreign advanced manufacturing company. It was found that main failure mode of solid aluminum electrolyte capacitors was the decrease of their capacitances. The decrease of their capacitances has the same pattern in these tests. Test result for comparison of characteristics between domestic products and foreign advanced products shows that domestic products have the shorter lifetime and their capacitances decrease more rapidly in high temperature operating test and temperature humidity test. Also in these tests, accelerated tests for high temperature operating test and temperature humidity test were developed.

• Applied Science and Convergence Technology
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• 제23권2호
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.208-212
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• 2004

In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and .Zr. C-V and I-Vcharacteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and $700^{\circ}C$ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.85-92
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• 2002

In this study, we analyzed and experimented micro-strip line inductors and capacitors for a SAW duplexer, an important devise for mobile communication. For SAW duplexers, micro-strip line lumped elements must have small impedance values, below several tens of nH or several tens of pF, and a small area pattern. In this study, we performed theoretical analysis of flat line type, meander line type, and spiral line type inductors and interdigital capacitors on a LiTaO$_3$ Piezo-crystal. We proposed a measurement method to evaluate small values of lumped elements accurately with network analyzer. In experiments, we confirmed validity of the theoretical analysis method through fabrication and characterization of micro-strip line lumped elements. The analysis method in this paper can be applied to SAW duplexers well as other microwave devices.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.396-401
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• 2000

In order to accurately measure the high voltage of 22.9[kV] power distribution lines we investigated the temperature dependence of measuring voltage on the number of stack layers in the voltage measurement system made from single and stack voltage divider capacitors (22, 44, 66 layers, respectively). Temperature coefficient of dielectric constant(TC$\varepsilon_{{\gamma}}$/)of voltage divider capacitors which were fabricated by BaTi $O_3$system ceramics showed the variations from -2.28% to +1.69% in the range of -25[$^{\circ}C$] ~50[$^{\circ}C$]) was decreased with increasing of stack number and the stack element of 66 layers showed the least error of $\pm$0.87%or of $\pm$0.87%.

• 전기학회논문지
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• 제61권9호
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• pp.1221-1225
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• 2012

This paper describes CSC(Current Sourced Converters)-based HVDC operational strategy for voltage stability enhancement in the power system. In case of CSC-based HVDC system, rectifier and inverter consume reactive power up to about 60% of converter rating. Therefore, CSC-based HVDC is basically not useful system for voltage stability even if AC filters and shunt capacitors are attached. But, If the particular power system condition is fulfilled, CSC-based HVDC also can be the rapid reactive power source for voltage stability enhancement using a cooperative control with converter and AC filters/Shunt Capacitors. In this paper, the cooperative control algorithm is presented and simulated to ${\pm}80kV$ 60MW HVDC system in Jeju island.

• 조명전기설비학회논문지
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• 제30권3호
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• pp.106-112
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• 2016

The high-voltage pulse generator consists of transformers of fundamental wave and harmonic waves, and shunt capacitors. The pulse has the fundamental wave and the harmonic waves that have been as a series circuit by the transformers to make high voltage pulse. This paper shows that pulse generator circuit is analyzed by using transformer equivalent circuits with the effect of load and simulated in time domain using Matlab program. The output voltage of pulse were obtained to 2.5kHz, 2.0kV. In high voltage circuit, capacitors are related to frequency band pass characteristics. Also, it is shown that the voltage of output pulse increases according to the growth of load.

• 대한전기학회논문지
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• 제45권1호
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• pp.67-73
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• 1996

Subsynchronous resonance(SSR) causes a torsional shaft torque on the generator. Damages resulting from the uncontrolled SSR have resulted in the breakdown in the shaft and costs for replacement power. This paper is to determine the feasibility of controlling SSR by the fast modulation of series compensation capacitors. The presence of subsynchronous currents in the system was detected by a subsynchronous relay which was modeled by the transient analysis of control systems(TACS) in electromagnetic transients program (EMTP). The capacitor segments were switched by bi-directional thyristor switches. These were modeled into EMTP. The strategy to switch the capacitors were modeled as a closed loop system. The paper proves that effective control of SSR can be obtained only by the detuning of the system and the removal or blocking of subsynchronous energy from the system. (author). refs., figs., tabs.

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.557-562
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• 2000

160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.