• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.295-298
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• 2013

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.144-147
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• 2000

The effect of accelerated aging test on ethylene-propylene-diene monomer(EPDM) rubber used for outdoor insulation was studied by X-ray photoelectron spectroscopy(XPS), scanning electron microscope(SEM), FFT spectrum alalysis, and electrical pulse counts using PC by oscilloscope(300 MHz). In electrical alalysis, FFT spectrum analysis indicated arcing caused a significant increase in the third harmonic content of the leakage current of polluted insulator. Also, pulse counts increased as aging time. The surface oxygen and aluminum content were found to increase and that of carbon and nitrogen were found to decrease with time. The detailed XPS analysis indicated that the concentration of carbon in C-C decreased and concentration of highly oxidized carbons increased with time, which was due to the oxidation of EPDM rubber polymer SEM analysis indicated that crack and erosion of EPDM rubber occurred with time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI film was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was 8300$\AA$/min and vertical profile was approximately acquired 90$^{\circ}$ at CF$_4$/(CF$_4$+O$_2$) of 0.2. The selectivies of polyimide to PR and SiO$_2$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of 07CF4 were investigated by optical emission spectrometer (OES).

• 한국표면공학회지
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• 제37권1호
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• pp.58-63
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• 2004

The oxidation behavior of Ti-Nb alloys was studied in dry atmosphere. After vacuum arc melting and hot rolling treatment, Ti-Nb alloys were oxidized at $450^{\circ}C$∼$750^{\circ}C$. The oxidation behaviors between matrix and oxide scale were analyzed by SEM, XPS and XRD. Ti-Nb alloys had higher oxidation resistance than pure Ti at $750^{\circ}C$. XPS analysis of oxide film revealed that $TiO_2$ oxide was formed on the top of surface. The weight gains during the oxidation increase rapidly at temperature above $600^{\circ}C$ which obey the parabolic law.

• 한국표면공학회지
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• 제29권5호
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

• 한국표면공학회지
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• 제39권4호
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• pp.166-172
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• 2006

Metallized Polyimide films are extensively used as base materials in microelectronics, optical and automotive applications. However it is difficult to deposit metals on those because of their structural stabilities. In this work, polyimide films are modified by a wet process with alkalinemetalhydroxide and additives to introduce functional groups. The surface molecular structures of polyimide are investigated using X-ray photoelectron spectroscopy(XPS), fourier transform infrared reflection spectroscopy(FTIR-ATR), atomic force micro-scopic(AFM). XPS spectra and FTIR spectra show that the surface structure of polyimide is converted into potassium polyamate. AFM image and AFM cross-sectional analyses reveal the increased roughness on the modified surface of polyimide films. As a result, it is shown that the adhesion strength between polyimide surface and electroless nickel layer is increased by the nano-anchoring effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.406-408
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• 1999

Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.176-178
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• 2002

Surface states of silicone polymer treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy(XPS) and surface voltage decay after corona charging. Plasma treatment causes the silica -like oxidative layer, which was confirmed with XPS, and lowers surface resistivity with increasing the plasma treatment time. Using the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by voltage-current method using three electrodes system. A good agreement between two methods was obtained. In addition, we estimated the thermal activation energy for surface conduction, Based on our results, we could understand the relationship between surface chemical states and surface electrical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.84-87
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• 2003

Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.