• Title/Summary/Keyword: XPS.

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Preparation of Iron Oxide-mixed ZnO films by Ultrasonic Spray Pyrolysis (초음파분무법을 이용한 산화철이 혼합된 ZnO막의 제조)

  • Choi Mu-Hee;Ma Tae-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.58-63
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    • 2006
  • In this Paper, ZnO films mixed with iron oxide were prepared by an ultrasonic spray pyrolysis method. The chemical composition and structural properties as a function of the Fe atomic ratio in the deposition solution were studied. Zinc acetate and ferrous chloride were used as precursors of Zn and Fe, respectively. Fe atomic ratio to Zn varied from 0.15 to 10.0. Substrate temperature was fixed at $250^{\circ}C$. The crystallographic properties and surface morphologies of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. Electron probe X-ray microanalysis (EPMA) and X-ray photoelectron spectroscopy (XPS) were carried out to analyse the chemical composition and state of Zn and Fe atoms.

Synthesis of Diamond Thin Film by Helicon Plasma Chemical Vapor Deposition

  • Hyun, Jun-Won;Kim, Yong-Kin
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.1-5
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    • 2000
  • Diamond films have been achieved on Si(100) substrates using helicon plasma chemical vapor deposition(HPCVD), Gas mixtures with methane and hydrogen have been used. The growth characteristics were investigated by means of X-ray photoelectroton spectroscopy, Atomic force microscopy and X-ray diffraction. We obtained a plasma density as high as 10$\^$10/~10$\^$11/ cm$\^$-3/ by helicon source. The smooth(100) faces of submicron diamond crystallites were found to exhibit pyramidal shaped architecture, The XPS spectrum for the nucleation layer indicates the presence of diamond at 285.4 eV, close to the reported value of 285.5 eV for diamond , XRD results demonstrates the existence of polycrystalline diamond as the diamond (111) and (220) peaks.

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A Study on Direct Bonding of 3C-SiC Wafers Using PECVD Oxide (CVD 절연막을 이용한 3C-SiC기판의 직접접합에 관한 연구)

  • 정연식;류지구;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.164-167
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    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$\textrm{cm}^2$∼Max : 15.5 kgf/$\textrm{cm}^2$).

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Analysis of the Surface Degradation in UV-irradiated Poly(ethylene terephthalate) films (자외선 조사된 Poly(ethylene terephthalate) 필름의 표면 열화 분석)

  • Lim, K.B.;Lee, B.S.;Hwang, M.H.;Kim, Y.Y.;Lim, H.C.;Chi, C.S.;Nam, K.W.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1457-1459
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    • 2001
  • This paper deals with the change of surface Potential decay, surface resistivity, contact an91e and XPS of ultraviolet-treated PET films. From the experimental results on the surface Potential decay of UV degraded-samples, it was found that the accumulation of charge is decreased and the surface potential decay time is shortened. Also, from the result of XPS, it was found that the changes affected by the surface degradation of PET film were caused by the generation of carboxyl groups through the chain decomposition and recombination with oxygen molecules in the air.

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Growth mechanism of anodic oxide for MCT passivation (MCT 표면보호를 위한 양극산화막 성장)

  • 정진원;왕진석
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.352-356
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    • 1995
  • Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

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Effects of Seed Layer and Thermal Treatment on Atomic Layer Deposition-Grown Tin Oxide

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.222-225
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    • 2010
  • The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.

Surface Ageing Property of Polymer Insulator for Transmission line with Forest Fire Test (송전용 폴리머 애자의 산불 모의시험에 따른 표면열화 특성)

  • Cho, Han-Goo;Kim, Kyang-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.110-110
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    • 2010
  • Suspension insulator have made use of porcelain insulator mainly, but polymer insulator is using recently. Polymer suspension insulator have advantage that it is light than porcelain insulator. The ageing performance is excellent and it is possible for mass production. There is high possibility of mountain fire because a lot of potential inflammables such as fallen leaves are stacked on the ground Therefore surface aging of polymer insulator most of the overhead transmission lines in Korea are operated on the mountain need analysis of transmission line into forest fire. surface aging property is analyzed by SEM, EDX, XPS, FTIR, DSC in this paper.

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Effects of Ultraviolet Surface Treatment on Adhesion Strength of Carbon/Epoxy Composite

  • Kim, Jong-Min;Lee, Dai-Gil
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2002.10a
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    • pp.15-19
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    • 2002
  • In this work, the surface modification of carbon/epoxy composites was investigated using UV (ultraviolet ray) surface treatment to increase adhesion strength between the carbon/epoxy composites and adhesives. After UV surface treatment, XPS (X-ray photoelectron spectroscopy) tests were performed to analyze the surface characteristics of the carbon/epoxy composites. Comparing adhesion strengths with the surface characteristics, the effects of the surface modification of carbon/epoxy composites by UV surface treatments on the adhesion strengths were investigated.

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Reaction of NO on Vanadium Oxide Surfaces: Observation of the NO Dimer Formation

  • Jeong, Hyun-Suck;Kim, Chang-Min
    • Bulletin of the Korean Chemical Society
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    • v.28 no.3
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    • pp.413-416
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    • 2007
  • The adsorption and surface reactions of NO on a VO/V(110) surface have been investigated using X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure, and temperature programmed desorption (TPD) technique. NO is molecularly adsorbed on VO/V(110) at 80 K. As the surface coverage of NO increases, the NO dimer is formed on the surface at 80 K. Both NO and (NO)2 are adsorbed on the surface with the N-O bond perpendicular to the surface. (NO)2 decomposes at ~100 K and the reaction product is desorbed as N2O. Decomposition of NO takes place when the surface temperature is higher than 273 K.

Recognition of Plasma- Induced X-Ray Photoelectron Spectroscopy Fault Pattern Using Wavelet and Neural Network (웨이블렛과 신경망을 이용한 플라즈마-유도 X-Ray Photoelectron Spectroscopy 고장 패턴의 인식)

  • Kim, Soo-Youn;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2006.04a
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    • pp.135-137
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    • 2006
  • To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.

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