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http://dx.doi.org/10.4313/TEEM.2010.11.5.222

Effects of Seed Layer and Thermal Treatment on Atomic Layer Deposition-Grown Tin Oxide  

Choi, Woon-Seop (School of Display Engineering, Hoseo University)
Publication Information
Transactions on Electrical and Electronic Materials / v.11, no.5, 2010 , pp. 222-225 More about this Journal
Abstract
The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.
Keywords
Tin oxide; Atomic layer deposition; Seed layer;
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Times Cited By KSCI : 2  (Citation Analysis)
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