• Bulletin of the Korean Chemical Society
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• v.16 no.11
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• pp.1019-1023
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• 1995

A light-emitting silicon material was prepared by electrochemical etching of n-Si single crystal wafers in a solution of hydrofluoric acid and ethanol. Visible photoluminescence from the silicon was inhomogeneous and decayed rapidly in the ambient laboratory conditions or with photoirradiation. Substantial improvements in photoluminescence which include little-dependent luminescence peak energy with excitation energy variation and longer-lasting room temperature visible photoluminescence were achieved when the surface of photoluminescent silicon material was derivatized with the surface modifier of octadecylmercaptan. Surface modification of the photoluminescent silicon was evidenced by the measurements of contact angles of static water drops, FT-IR spectra and XPS data, in addition to changed photoluminescence. Similar improvements in photoluminescence were observed with the light-emitting silicon treated with dodecylmercaptan, but not with octadecane. The present results indicate that sulfurs of octadecylmercaptans or dodecylmercaptans appear to coordinate the surface Si atoms of LESi and perturb the surface states to significantly change the luminescent characteristics of LESi.

• Bulletin of the Korean Chemical Society
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• v.21 no.12
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• pp.1181-1186
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• 2000

The structural evolution during the thermal treatment of $70SiO_2-3OTiO_2(mole%)$ sol-gel derived powders and films was investigated by FT-IR, Raman and XPS, and XRD. From these results, the $TiO_2-rich$ regions involving $Ti^{4+}$ ions in octahedral coordination were confirmed to be amorphous at $600^{\circ}C$. However, Raman spectra along with XRD patterns indicated that at high temperature (above $700^{\circ}C)$, the amorphous $TiO_2was$ segregating to form anatase crystal. Also, the effect of experimental variables such as thermal treatment, heating rate and exposure to water vapor on structural changes, refractive index and thickness of the film coated on sodalime-silicate glass were investigated.

• Bulletin of the Korean Chemical Society
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• v.16 no.4
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• pp.316-320
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• 1995

The incorporation of metal ion into the Langmuir-Blodgett (LB) film of an itaconate copolymer was investigated. The polymer was prepared via radical copolymerization of monooctadecyl itaconate with triethyleneglycol methyl vinyl ether. The metal ions employed were Na+, Cs+, Mg2+, Fe2+, Al3+, and Fe3+. The surface pressure-area isotherms indicated that all the monolayers studied on subphases with metal ions showed more expanded areas than that observed on pure water. The monolayers showed an irreversible collapse behavior. The collapse pressure of the monolayers was low on subphases containing trivalent metal ions. From the FT-IR spectra by reflection and transmission modes, the formation of carboxylate salts and the uprisen orientation of the pendant against substrate surface in the polymer LB film were determined. It was estimated by XPS measurement that ca. 13.1 repeat units of the polymer contain one Na+ ion, while one Mg2+ ion corresponds to 5.9 carboxyls.

• Bulletin of the Korean Chemical Society
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• v.8 no.5
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• pp.358-362
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• 1987

The interaction of oxygen with polycrystalline nickel surface has been studied by investigating the X-ray photoelectron spectra of O 1s, Ni $2p_{3/2}$, and their valence band electrons. By comparing the oxygen exposure of this work with the reported results of LEED, AES, and work function measurements, it is found that the atomic oxygen, adsorbed dissociatively in the initial stage of exposure, is responsible for a p(2 ${\times}$ 2) structure and a subsequent c(2 ${\times}$ 2) structure on the Ni(100) surface. This dissociatively adsorbed oxygen species forms surface NiO layer subsequently on further oxygen exposure. The NiO layer is more easily formed with the increasing temperature. Non-stoichiometric oxygen species is also found to accompany the NiO layer. It appears prior to the formation of bulk NiO at all of the temperatures of this work except at 523K.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.58-58
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• 2003

Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.20-25
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• 2007

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.194-198
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• 2010

Cubic boron nitride (c-BN) is a promising material for use in many potential applications because of its outstanding physical properties such as high thermal stability, high abrasive wear resistance, and super hardness. Even though 316L austenitic stainless steel (STS) has poor wear resistance causing it to be toxic in the body due to wear and material chips, 316L STS has been used for implant biomaterials in orthopedics due to its good corrosion resistance and mechanical properties. Therefore, in the present study, c-BN films with a $B_4C$ layer were applied to a 316L STS specimen in order to improve its wear resistance. The deposition of the c-BN films was performed using an r.f. (13.56 MHz) magnetron sputtering system with a $B_4C$ target. The coating layers were characterized using XPS and SEM, and the mechanical properties were investigated using a nanoindenter. The friction coefficient of the c-BN coated 316L STS steel was obtained using a pin-on-disk according to the ASTM G163-99. The thickness of the obtained c-BN and $B_4C$ were about 220 nm and 630 nm, respectively. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of $sp^3$ BN bonds. The hardness and elastic modulus of the c-BN measured by the nanoindenter were 46.8 GPa and 345.7 GPa, respectively. The friction coefficient of the c-BN coated 316L STS was decreased from 3.5 to 1.6. The wear property of the c-BN coated 316L STS was enhanced by a factor of two.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.181-188
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• 2006

Rutile single crystals grown by skull melting method were cut parallel and perpendicular to growth axis, and both sides of the cut wafers (${\phi}5.5mmx1.0mm$) were then polished to be mirror surfaces. The black wafers were changed into pale yellow color by annealing in air at 1200 and $1300^{\circ}C$ for $3{\sim}15\;and\;10{\sim}50$ hours, respectively. After annealing, structural and optical properties were examined by specific gravity (S.G), SEM-electron backscattered pattern (SEM-EBSP), X-ray diffraction (XRD), FT-IR transmittance spectra, laser Raman spectroscopy (LRS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These results are analyzed increase of weight in air, decrease of weight in water and specific gravity, shown secondary phase of needle shape, diffusion of oxygen ion and increase of $Ti^{3+}$. From the above results, we suggest that the skull melting method grown rutile single crystals contain defect centers such as $O_v,\;Ti^{3+},\;O_v-Ti^{3+}$ interstitials and $F^+-H^+$.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.849-853
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• 1999

In the study, superconducting properties of $Bi_2$-x(sub)$LSr_2$Ca(sub)1+x(sub)$LCu_2$O(sub)8+d (x(sub)L=0, 0.05, 0.1, 0.2) films prepared by the LPE method was investigated. The peak decompositions of Sr3d and Ca2p XPS spectra, together with the EPMA results, elucidated the occupancies of Bi, Sr and Ca atoms on the SrO- and Ca-layers. The lattice parameter c monotonically increased with increasing x(sub)L for $0\leq$x(sub)L$\leq$0.2. The superconducting critical temperature T(sub)c showed a maximum value around x(sub)L=0.1. The x(sub)L dependence of the superconducting critical temperature T(sub)c and the lattice parameter c are explained by the changes of the excess oxygens in the BiO-layer. Since distribution and deficiency of the atoms in SrO-layer have influenced on superconducting properties and crystal structure.