• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.175.1-175.1
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• 2015

CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

• 센서학회지
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• 제5권1호
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• pp.51-56
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• 1996

Structural properties of rf sputtered boron nitride films were studied as a function of deposition parameters such as nitrogen pressure, substrate temperature and substrate bias using X-ray photoelectron spectroscopy and Auger electron spectroscopy. Composition and information on chemical bonding of resultant films was determined by XPS. XPS core level spectra showed that ratio of boron to nitrogen varied from 3.11 to 1.45 with respect to partial nitrogen pressure. Curve fitting of XPS spectra revealed three kinds of bonding mechanism of boron in the films. XPS peak positions of both B 1s and N 1s shifted to higher energy with higher nitrogen pressure as well as increase in substrate bias voltage. AES was used to see possible contamination of films by carbon or oxygen as well.

• 한국진공학회지
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• 제6권4호
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• pp.314-320
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• 1997

XPS를 이용하여 공기 중에 노출된 TiN박막과 상온 증착된 Cu사이의 계면에서의 화학적 반응과 전자 구조적인 변화를 조사하였다. Ti(2p), O(1s), N(1s), Cu(2p) core-level과 Cu LMM Auger line의 spectrum을 보면, Cu의 증착두께가 증가하여도 peak의 위치 뿐만 아니라 line shape이 전혀 변화하지 않는다. 그리고 XPS에 의한 valence bands를 보아도 전 혀 변화가 없다. 이것은 공기 중에 노출된 TiN박막과 Cu사이의 계면에서 Cu화합물의 어떠 한 형태도 존재하지 않을 뿐만 아니라 전자 구조적인 면에서도 전혀 변화가 없음을 의미한 다. 계면에서 Cu가 화학적 반응을 일으키지 않는 것은 계면접합력을 나쁘게 하는 요인이 된 다. 우리는 계면에서의 화학 반응 또는 전자구조의 변화에 대한 연구를 통하여 Cu와 TiN박 막의 계면접합력을 이해할 수 있었다.

• 한국표면공학회지
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• 제29권5호
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.272.2-272.2
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• 2016

Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.226-226
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• 2012

The electronic and electrical properties of nickel oxide (NiO) thin films were investigated by reflection electron energy loss spectroscopy (REELS), x-ray photoelectron spectroscopy (XPS), and Hall Effect measurements. REELS spectra revealed that the band gap of the NiO thin film was increased from 3.50 eV to 4.02 eV after annealing the sample at $800^{\circ}C$. Our XPS spectra showed that the amount of Ni2O3 decreased after annealing. The Hall Effect results showed that the doping type of the sample changed from n type to p type after annealing. The resistivity decreased drastically from $4.6{\times}10^3$ to $3.5{\times}10^{-2}$ ${\Omega}{\cdot}cm$. The mobility of NiO thin films was changed form $3.29{\times}10^3$ to $3.09{\times}10^5cm^2/V{\cdot}s$. Our results showed that the annealing temperature plays a crucial role in increasing the carrier concentration and the mobility which leads to lowering resistivity of NiO thin films.

• 통합자연과학논문집
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• 제9권4호
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• pp.223-227
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• 2016

The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron co-sputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

• 한국세라믹학회지
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• 제30권11호
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• pp.911-918
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• 1993

X-ray photoelectron spectroscopy(XPS) has been empolyed to investigate the structure of PbO-Bi2O3-Ga2O3 glasses. XPS OIS spectra recorded from binary PbO-Ga2O3 glasses clearly showed the presence of two peacks due to bridging and non-bridging oxygens, respectively. Gaussin best-fit deconvolution of the OIS peaks suggested there are substaintial amount of non-bridging oxygens in the structure. Therefore, in addition to the glassforming and charge compensating roles of PbO as suggested from the previous works, role of PbO as network modifiers needs to be considered. Addition of Bi2O3 to binary glasses resulted in the rapid decrease in the amount of non-bridging oxygens as well as in values of FWHM (Full Width at the Half Maximum intensity). It is believed that Bi2O3 form distorted BiO6 octahedra and therefore, work as intermediates. Infrared spectra also suggested that Ga2O3 behave as network-formers in the form of GaO4- tetrahedra.

• 한국세라믹학회지
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• 제37권9호
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• pp.900-908
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• 2000

일반적인 유리용융과 열처리법을 이용하여 많은 양의 금속구리 미립자가 분산된 Zinc Phosphate 유리를 제조하였다. 금속산화물로는 Cu$_2$O를, 환원제로는 SnO를 사용하였다. XRD와 전자회절로부터 열처리에 의해 금속구리의 결정상이 석출됨을 알 수 있었고, TEM에 의해 석출상의 크기는 수~20nm 정도임을 알 수 있었다. 또한 570nm에서의 광흡수 피크로부터도 금속구리의 석출을 확인할 수 있었다. 석출입자의 크기와 흡광은 석출을 위한 열처리 온도와 시간이 증가함에 따라 증가하였다. XPS 스펙트럼으로는 구리의 산화상태 중 Cu$^{2+}$ 이온의 상태만을 분명히 할 수 있었다. 매질유리의 BO/NBO의 비는 열처리 전후 크게 변화가 없었으며, 열처리 후 Cu$^{2+}$ 이온이 다소 감소되는 경향을 보였다.

• 한국표면공학회지
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• 제39권4호
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• pp.166-172
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• 2006

Metallized Polyimide films are extensively used as base materials in microelectronics, optical and automotive applications. However it is difficult to deposit metals on those because of their structural stabilities. In this work, polyimide films are modified by a wet process with alkalinemetalhydroxide and additives to introduce functional groups. The surface molecular structures of polyimide are investigated using X-ray photoelectron spectroscopy(XPS), fourier transform infrared reflection spectroscopy(FTIR-ATR), atomic force micro-scopic(AFM). XPS spectra and FTIR spectra show that the surface structure of polyimide is converted into potassium polyamate. AFM image and AFM cross-sectional analyses reveal the increased roughness on the modified surface of polyimide films. As a result, it is shown that the adhesion strength between polyimide surface and electroless nickel layer is increased by the nano-anchoring effect.