• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.284-290
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• 2019

Ternary MoS₂/graphene (G)-TiO₂ photocatalysts were prepared by a simple hydrothermal method. The morphology, phase structure, band gap, and catalytic properties of the prepared samples were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-vis spectrophotometry, and Brunauer-Emmett-Teller surface area measurement. The H₂ production efficiency of the prepared catalysts was tested in methanol-water mixture under visible light. MoS₂/G-TiO₂ exhibited the highest activity for photocatalytic H₂ production. For 5 wt.% and 1 wt.% MoS₂ and graphene (5MT-1G), the production rate of H₂ was as high as 1989 µmol^-1h^-1. The catalyst 5MT-1G showed H₂ production activity that was ~ 11.3, 5.6, and 4.1 times higher than those of pure TiO₂, 1GT, and 5MT, respectively. The unique structure and morphology of the MoS₂/G-TiO₂ photocatalyst contributed to its improved hydrogen production efficiency under visible light.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.74-74
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• 2018

Ti-6Al-4V alloys have been widely used as orthopedic materials because of their excellent corrosion resistance and mechanical properties. However, it does not bind directly to the bone, so it requires a surface modification. This problem can be solved by nanotube and micropore formation. Plasma electrolytic oxidation (PEO) treatment for micropore, which combines high-voltage spark and electrochemical oxidation, is a new way of forming a ceramic coating on light metals such as titanium and its alloys. This method has excellent reproducibility and can easily control the shape and size of the Ti alloy. In this study, formation of bioactive surface by PEO-treatment after $2^{nd}$ ATO technique of Ti-6Al-4V alloy was invesgated by various instrument. Nanotube oxide surface structure was formed on the surface by anodic oxidation treatment in 0.8 wt.% NaF and 1M $H_3PO_4$ electrolytes. After nanotube formation, nanotube layer was removed by ultrasonic cleaning. PEO-treatment was carried out at 280V for 3 minutes in the electrolytic solution containing the bioactive substance (Mg, Zn, Mn, Sr, and Si). The surface of Ti-6Al-4V alloy was observed by field emission scanning electron microscopy (FE-SEM, S-4800 Hitachi, Japan). An energy dispersive X-ray spectrometer (EDS, Inca program, Oxford, UK) was used to analyze the spectra of physiologically active Si, Mn, Mg, Zn, and Sr ions. The PEO film formed on the Ti-6Al-4V alloy surface was characterized using an X-ray diffractometer (TF-XRD, X'pert Philips, Netherlands). It is confirmed that bioactive ions play an essential role in the normal bone growth and metabolism of the human skeletal tissues.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• Journal of Korea Foundry Society
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• v.13 no.6
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• pp.524-531
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• 1993

Dispersion behaviors of SiC particles and microstructures in Al-2%Si/SiCp composite prepared by Rheo-compocasting were studied with change of fabrication conditions(slurry temperature, agitation time) and additions of Mg($0{\sim}3wt.%$). Also, the microhardness change of matrix, interface and total in composites were examined with additions of Mg($0{\sim}3wt.%$). The dispersion of particles in the composites became relatively homogeneous with increase of Mg additions, agitation time and decrease of slurry temperature. Rate of occupied area by particle in matrix was increased as increase of Mg additions due to improvement of wettability between SiC particle and matrix. A favorable composites were obtained by melting under Ar atmospheric SiCp injection and bottom pouring system. According to the analysis of X-ray diffraction, $Mg_2Si$, $Al_4C_3$, $SiO_2$ and MgO, etc, intermetallic compounds were formed by chemical interreaction at interface of matrix and particles. The microhardness of interface is higher than that of matrix due to more strengthening of above intermetallic compounds. It was considered that the total hardness of the composites is improved by dispersing of SiCp and addition of Mg.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.3-6
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• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

• Restorative Dentistry and Endodontics
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• v.47 no.1
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• pp.2.1-2.11
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• 2022

Objectives: This study investigated the impact of micro-computed tomography (micro-CT)-based voxel size on the analysis of material/dentin interface voids and thickness of different endodontic cements. Materials and Methods: Following root-end resection and apical preparation, maxillary premolars were filled with mineral trioxide aggregate (MTA), Biodentine, and intermediate restorative material (IRM) (n = 24). The samples were scanned using micro-CT (SkyScan 1272; Bruker) and the cement/dentin interface and thickness of materials were evaluated at voxel sizes of 5, 10, and 20 ㎛. Analysis of variance and the Tukey test were conducted, and the degree of agreement between different voxel sizes was evaluated using the Bland and Altman method (p < 0.05). Results: All materials showed an increase in thickness from 5 to 10 and 20 ㎛ (p < 0.05). When evaluating the interface voids, materials were similar at 5 ㎛ (p > 0.05), while at 10 and 20 ㎛ Biodentine showed the lowest percentage of voids (p < 0.05). A decrease in the interface voids was observed for MTA and IRM at 20 ㎛, while Biodentine showed differences among all voxel sizes (p < 0.05). The Bland-Altman plots for comparisons among voxel sizes showed the largest deviations when comparing images between 5 and 20 ㎛. Conclusions: Voxel size had an impact on the micro-CT evaluation of thickness and interface voids of endodontic materials. All cements exhibited an increase in thickness and a decrease in the void percentage as the voxel size increased, especially when evaluating images at 20 ㎛.

• Journal of rehabilitation welfare engineering & assistive technology
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• v.5 no.1
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• pp.87-93
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• 2011

This paper proposes a method for extraction of the gaze point on display using EOG(Electrooculography) signal. Based on the linear property of EOG signal, the proposed method corrects scaling difference, rotation difference and origin difference between coordinate of using EOG signal and coordinate on display, without adjustment using the head movement. The performance of the proposed method was evaluated by measuring the difference between extracted gaze point and displayed circle point on the monitor with 1680*1050 resolution. Experimental results show that the average distance errors at the gaze points are 3%(56pixel) on x-axis, 4%(47pixel) on y-axis, respectively. This method can be used to human computer interface of pointing device for general paralysis patients or HCI for VR game application.