• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.19-23
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• 2008

The mixed ferrite $V_xFe_{3-x}O_4$(x=0.0, 0.15, 0.5, 1.0) thin films were prepared by sol-gel method. Their crystallographic and magnetic hyperfine properties have been studied using X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). The crystal structure is found to be cubic spinel throughout the series($x{\leq}1.0$), and the lattice parameter $a_0$ increases linearly with increasing V content. XRD, XSP and CEMS indicate that $V^{3+}$ substitution for $Fe^{3+}$ in B-site is superior to $V^{2+}$ substitution for $Fe^{2+}$ in B-site. It is noticeable that both quadrupole shift and hyperfine field decreases with increasing V composition, suggesting the change of local symmetry and accompanying line-broadening. The line-broadening on CEMS spectra can be explained by the distribution of magnetic hyperfine fields.

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.185-189
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• 2016

By employing photoemission spectroscopy (PES) and soft X-ray absorption spectroscopy (XAS), the electronic structure of the candidate half-metallic antiferromagnet of $Mn_3Ga$ Heusler compound has been investigated. We have studied two ball-milled $Mn_3Ga$ powder samples, one after annealing and the other without annealing, respectively. Based on the Mn 2p XAS study, we have found that Mn ions are nearly divalent in $Mn_3Ga$ and that the Mn ions having the locally octahedral symmetry and those having the locally tetrahedral symmetry are both present in $Mn_3Ga$. We have found relatively good agreement between the measured valence-band PES spectrum of $Mn_3Ga$ and the calculated density of states, which is in agreement with the half-metallic electronic structure of $Mn_3Ga$.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.500-503
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• 2004

본 연구에서는 금속 원자를 단열 팽창시켜 클러스터를 만들고, 생성된 클러스터를 이온화시킨 후 집속렌즈 및 electric quadrupole을 이용하여 기판으로 증착 하였다. 집속렌즈의 설계에서는 단일 초점 방식의 렌즈보다 성능을 높이기 위하여 이중 초점과 핀홀을 써서 집속 효과 및 효율을 높였다. 렌즈의 설계는 일반적으로 하전입자의 에너지 손실 없이 집속할수 있는 Einzel 렌즈를 기본으로 하였으며, SIMION software 를 사용하여 시뮬레이션 하였다. 시뮬레이션 후 실제 렌즈계 및 정전압원을 제작하여 금(Au)의 클러스터를 생성하여 렌즈계를 통과한 후 실제 기판위로 증착이 되는 것을 AFM(Atomic force microscopy)과 XPS(X-ray photoemission spectroscopy)를 이용해 조사하여 렌즈계가 실제로 동작함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.302-302
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• 2011

The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.91-92
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• 2006

Liquid crystal (LC) alignment on $a-SiO_x$ thin film was investigated by means of X-ray photoemission spectroscopy and optical transmittance as we varied the deposition temperature and the target-to-substrate distance. LC molecules can be aligned vertically on $a-SiO_x$ film when the stoichiometric parameter x of $a-SiO_x$ is smaller than 1.56, but they can be aligned homogeneously when x is larger than 1.56. We also found that whether liquid crystals can be aligned vertically or homogeneously on $a-SiO_x$ film can be predicted simply by measuring the change in optical transmittance by deposition of $a-SiO_x$ thin film layers.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1374-1375
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• 2006

Ar/$Cl_2$ 유도결합 플라즈마 (ICP)의 가스 혼합비에 따른 $(Bi_{4-x}La_x)Ti_{3}O_{12}$ 박막의 식각 메커니즘과 식각면에서의 플라즈마 손상을 조사하였다. BLT 박막의 최대식각률은 Ar/$Cl_2$ 플라즈마에서의 Ar 가스 혼합비가 80%일 때 50.8 nm의 값을 보였다. 정전 탐침을 통해 Ar 가스의 혼합비에 따른 전자온도와 전자밀도를 관측하였다. 박막 표면의 X-ray photoemission spectroscopy 분석과 박막의 이력곡선을 통해 BLT 박막의 식각 손상은 Cl 원자와의 반응에 의한 화학적 식각 손상이 BLT 박막 표면에서의 Ar 이온충돌에 의한 물리적 손상보다 더 크다는 것을 확인 할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.738-742
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• 2006

We report on the effects of co-doping with fluorine on properties of ZnO thin films grown by pulsed-laser deposition. The transport characteristics of Ag-F and Li-F codoped ZnO films were determined by Hall-effect measurements at room temperature. Ag-F codoped ZnO films showed n-type semiconducting behaviors. An ambiguous carrier type was observed in Li-F codoped ZnO films grown at a temperature of 500$^{\circ}C$ with the oxygen pressures of 20 and 200 mTorr. The qualities of the codoped ZnO films were studied by X-ray diffraction, atomic force microscopy, X-ray photoemission spectroscopy, and photoluminescence.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.272.1-272.1
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• 2016

In a three-dimensional topological insulator Bi2Se3, a stress control for band gap manipulation was predicted but no systematic investigation has been performed yet due to the requirement of large external stress. We report herein on the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. Using small angle X-ray scattering and Raman spectroscopy, the changes of d-spacings in the crystal structure and phonon vibration shifts resulted from stress are clearly observed when the film thickness is below ten quintuple layers. From the UV photoemission/inverse photoemission spectroscopy (UPS/IPES) results and ab initio calculations, significant changes of the Fermi level and band gap were observed. The deformed band structure also exhibits a Van Hove singularity at specific energies in the UV absorption experiment and ab initio calculations. Our results, including the synthesis of a strained ultrathin topological insulator, suggest a new direction for electronic and spintronic applications for the future.