• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.251-256
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• 2003

We have developed the quality analysis system for magnetic field effect of cathode-ray tube that is used a monitor, TV and medical appliance. We designed and constructed the large 3-axis square coil (2 m length) system for the generation of 3-component magnetic field using power supply, magnetometer and computer below 0.2 mT range. The coil constant is 30.31 ${\mu}$T, 29.73 ${\mu}$T and 30.51 ${\mu}$T for the X, Y and Z axis square coil respectively. The magnetic field resolution was 0.01 T. The uniformity of magnetic field was measured within 1 ％ in the range of 12 cm.

• Elastomers and Composites
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• v.44 no.4
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• pp.455-465
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• 2009

In this study, Organo-montmorillonite(MMT) was synthesized by intercalation of various amine(Octylamine, Dodecylamine, Dimethyldodecylamine, Octadecylamine) compounds into layered silicate. Natural Rubber(NR)/MMT nanocomposites were prepared by reinforcement of Organo-MMT. X-ray diffraction(XRD) and Scanning electron microscope(SEM) were employed to characterize the layer distance of Organo-MMT and the morphology of the NR/MMT nanocomposites. The structures of the synthesized Organo-MMTs were analyzed by the measurement of FT-IR. Cure characteristics, surface free energy and mechanical properties such as tensile strength, modulus and hardness of NR/MMT nanocomposites were carefully studied by contact angle meter, ODR, UTM, and hardness tester. FT-IR analysis showed a insertion of the alkyl and amine chains into the interlayers of the MMT. It was shown that the cure time of the organo-MMT was more decreased than that of $Na^+$-MMT. Surface free energy and tensile strength of the NR/DDA-MMT nanocomposite were the highest. NR/ODA-MMT nanocomposite was the highest in hardness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.776-780
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• 2015

In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1104-1105
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• 2006

Several boride sintered bodies such as $TiB_2$, $ZrB_2$, and $SiB_6$ were previously reported. In the present study, the sinterability and physical properties of chromium boride $(CrB_2)$ containing chromium carbide $(Cr_3C_2)$ sintered bodies were investigated in order to determine its new advanced material. The samples were sintered at desired temperature for 1 hour in vacuum under a pressure by hot pressing. The relative density of sintered bodies was measured by Archimedes' method. The relative densities of $CrB_2$ addition of 0, 5, 10, 15 and 20 mass% $Cr_3C_2$ composites were 92 to 95%. The Vickers hardness of the $CrB_2$ with 10 and 15 mass% $Cr_3C_2$ composites were about 14 and 15 GPa at room temperature, respectively. The Vickers hardness at high temperature of the $CrB_2$ addition of 10 mass% $Cr_3C_2$ composite decreased with increasing measurement temperature. The Vickers hardness at 1273 K of the sample was 6 GPa. The Vickers hardness of $CrB_2$ addition of $Cr_3C_2$ composites was higher than monolithic $CrB_2$ sintered body. The powder X-ray diffraction analysis detected CrB and $B_4C$ phases in $CrB_2$ containing $Cr_3C_2$ composites.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.33-40
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• 2014

Poly vinylidene fluoride-co-hexafluoropropylene (PVdF-HFP) membrane were prepared by the electrospinning technique. We had applied a DLC coating process and then the surface of the membrane and the contact angle change was investigated. Electrospun fibrous PVdF-HFP membrane surface became to wrinkled shape by Ar plasma treatment and treatment conditions. The wrinkled surface of PVdF-HFP membrane became super-hydrophilic. However, after DLC coating process, it became super-hydrophobic. The resulting surfaces were characterized by water contact angle measurement, X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FE-SEM). Resultantly it was recognized that the wettability characteristics of the membrane surfaces depended on the chemical composition and surface morphology.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.894-898
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• 2011

The first example of lead compound from $Pb(NO_3)_2$ and $H_3L$ N-heterocyclic ligand $(H_3L\;=\;(HO_2C)_2(C_3N_2)(C_3H_7)CH_2(C_6H_4)(C_6H_3)CO_2H)$, $[Pb_4(L')_4]{\cdot}5H_2O$ 1 (L' = OOC$(C_3H_7)(C_3N_2)CH_2(C_6H_4)(C_6H_3)COO)$, has been obtained under hydrothermal condition by decarboxylation, and characterized by elemental analysis, IR, TGDTA, and single-crystal X-ray diffraction. Compound 1 possesses a rare two-dimensional upper-lower offset terrace-like layer structure. In 1, crystallographic distinct Pb(II) ion adopts five-coordination geometry, and two lattice water molecules occupy the voids between 2-D layers. Results of solid state fluorescence measurement indicate that the emission band 458 nm may be assigned to $\pi^*-n$ and $\pi^*-\pi$ electronic transitions within the aromatic systems of the ligand L', however, the emission bands centred at 555 nm, 600 nm and 719 nm may be derived from phosphorescent emission ($\lambda_{excitation}$ = 390 nm).

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.49-52
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• 2011

A dinuclear copper(II) complex of [$Cu_2(aceace)_4$(dipyph)] [aceace = acetylacetone, dipyph = 1,4-di(4-pyridylethene-2-yl-)benzene] has been synthesized and characterized by elemental analysis, IR and X-ray single crystal diffraction. It crystallizes in the monoclinic system, space group P21/c, with lattice parameters a = 7.9584(16) $\AA$, b = 18.594(4) $\AA$, c = 15.063(4) $\AA$ $\beta=120.97(2)^o$ and $M_r$ = 807.85 ($C_{40}H_{44}Cu_2N_2O_8$), Z = 2. Each of the $Cu^{2+}$ ion adopts a square pyramid geometry and coordinates with four oxygen atoms from two aceace ligands and one nitrogen atom from dipyph bidentate ligand. Magnetic measurement shows that the Weiss constant and Curie constant for the title compound are -0.22 K and 0.1154 emu K/mol, respectively. Thermal stability data indicate that the title complex undergoes two steps decomposition and the residue is $Cu_2O_4$. In the potential range of -1.5 ~ 0.8 V, the title complex represents an irreversible electrochemical process.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.6
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• pp.795-804
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• 2007

Statement of problem. Nano-scale calcium-phosphate coating on the anodizing titanium surface using ion beam-assisted deposition (IBAD) has been recently introduced to improve the early osseointegration. However, not much is known about their surface characteristics that have influence on tissue-implant interaction. Purpose. This study was aimed to investigate microtopography, surface roughness, surface composition, and wettability of the titanium surface modified by the anodic oxidation and calcium phosphate coating using IBAD. Material and methods. Commercially pure titanium disks were used as substrates. The experiment was composed of four groups. Group MA surfaces represented machined surface. Group AN was anodized surface. Group CaP/AN was anodic oxidized and calcium phosphate coated surfaces. Group SLA surfaces were sandblasted and acid etched surfaces. The prepared titanium discs were examined as follows. The surface morphology of the discs was examined using SEM. The surface roughness was measured by a confocal laser scanning microscope. Phase components were analyzed using thin-film x-ray diffraction. Wettability analyses were performed by contact angle measurement with distilled water, formamide, bromonaphtalene and surface free energy calculation. Results. (1) The four groups showed specific microtopography respectively. Anodized and calcium phosphate coated specimens showed multiple micropores and tiny homogeneously distributed crystalline particles. (2) The order of surface roughness values were, from the lowest to the highest, machined group, anodized group, anodized and calcium phosphate deposited group, and sandblasted and acid etched group. (3) Anodized and calcium phosphate deposited group was found to have titanium and titanium anatase oxides and exhibited calcium phosphorous crystalline structures. (4) Surface wettability was increased in the order of calcium phosphate deposited group, machined group, anodized group, sandblasted and acid etched group. Conclusion. After ion beam-assisted deposition on anodized titanium, the microporous structure remained on the surface and many small calcium phosphorous crystals were formed on the porous surface. Nanoscale calcium phosphorous deposition induced roughness on the microporous surface but hydrophobicity was increased.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.