• Bulletin of the Korean Chemical Society
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• v.22 no.4
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• pp.367-371
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• 2001

Lithium inserted into artificial carbon has been synthesized as a function of the Li concentration. The characteristics of these prepared compounds were determined from the studies using X-ray diffraction(XRD), solid nuclear magnetic resonance (NM R) spectrophotometric and differential scanning calorimeter(DSC) analysis. X-ray diffraction showed that lower stage intercalation compounds were formed with increasing Li concentration. In the case of the AG3, most compounds formed were of the stage 1 structure. Pure stage 1 structural defects of artificial graphite were not observed. 7Li-NMR data showed that bands are shifted toward higher frequencies with increasing lithium concentration; this is because non-occupied electron shells of Li increased in charge carrier density. Line widths of the Li inserted carbon compounds decreased slowly because of nonhomogeneous local magnetic order and the random electron spin direction for located Li between graphene layers. The enthalpy and entropy changes of the compounds can be obtained from the differential scanning calorimetric analysis results. From these results, it was found that exothermic and endothermic reactions of lithium inserted into artificial carbon are related to the thermal stability of lithium between artificial carbon graphene layers.

• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.146-149
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• 2008

Strontium-substituted $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$ compositions were prepared by the solid state synthesis method. These compositions were characterized for their phase, crystallinity and morphology using powder x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Photoluminescence properties were investigated by measuring excitation spectra, emission spectra and decay time for varying Ba/Sr concentrations. Photoluminescence results show higher luminescence and long decay time for $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$(x=0). This is probably due to the influence of the 5d electron states of $Eu^{2+}$ in the crystal field. Long persistence was observed for these compositions due to $Dy^{3+}$ co-doping.

• Journal of the Korean Geotechnical Society
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• v.28 no.6
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• pp.53-61
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• 2012

The purpose of this study is to understand the mechanism of cementation of soil induced by bacteria. In order to understand the mechanism of cementation of soft soils treated with bacteria, six types of specimens(Not treated, Normal concentration bacteria treatment, High concentration bacteria treatment, Supernatant high concentration bacteria treatment, Double high concentration bacteria treatment, and 25% Specimen high concentration bacteria treatment) were made. Scanning Electron Microscope (SEM), EDX and X-ray diffraction (XRD) analyses were performed on the soft silt and loose sand specimens. Compared with the normal bacteria concentration treated specimen, a clearer cementation between particles was observed in the 25% specimen high bacteria concentration treated specimen. On the basis of the preliminary results, it appears that microbial cementation can occur in the soft soil.

• Carbon letters
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• v.8 no.2
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• pp.95-100
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• 2007

A series of activated carbons (ACs) were derived from sugarcane bagasse under two activation schemes: steam-pyrolysis at $600-800^{\circ}C$ and chemical activation with $H_3PO_4$ at $500^{\circ}C$. Some carbons were treated at 400, $600^{\circ}C$, or for 1-3 h, and/or in flowing air during pyrolysis of acid-impregnated mass. XRD profiles displayed two broad diffuse bands centered around $2{\theta}=23$ and $43^{\circ}$, currently associated with diffraction from the 002 and 100/101 set of planes in graphite, respectively. These correspond to the interlayer spacing, Lc, and microcrystallite lateral dimensions, La, of the turbostratic (fully disordered) graphene layers. Steam pyrolysis-activated carbons exhibit only the two mentioned broad bands with enhancement in number of layers, with temperature, and small decrease in microcrystallite diameter, La. XRD patterns of $H_3PO_4$-ACs display more developed and separated peaks in the early region with maxima at $2{\theta}=23$, 26 and $29^{\circ}$, possibly ascribed to fragmented microcrystallites (or partially organized structures). Diffraction within the $2{\theta}=43^{\circ}$ is still broad although depressed and diffuse, suggesting that the intragraphitic layers are less developed. Varying the conditions of chemical activation inflicts insignificant structural alterations. Circulating air during pyrolysis leads to enhancement of the basic graphitic structure with destruction and degradation in the lateral dimensions.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.176-177
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• 2005

• Journal of the Mineralogical Society of Korea
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• v.24 no.2
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• pp.119-131
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• 2011

The asbestos contents in some representative building materials were analyzed using JIS (Japanese Industrial Standard) X-ray diffraction (XRD) method. The changes in mineral composition during analysis process and problems in JIS method were also examined. XRD analysis of some representative domestic building materials used for roof, wall, ceiling, and floor indicates that slate have the highest asbestos content having 6.87~6.93% of chrysotile. Other building materials analyzed in this study also have 1.35~3.98% of chrysotile contents. The XRD analysis results of asbestos contents in some domestic building materials are presented in this study. This method is very effective for the asbestos content evaluation of building materials according to newly modified asbestos content regulation (Law of Industrial Safety and Health, 2007-26) that limits asbestos content less than 0.1% by Ministry of Employment and Labor. Small amount of tremolite as well as chrysotile were also observed in some samples. With consideration of crystal shape, contents and geological occurrence, it is considered that tremolite is an associated mineral of chrysotile and is not intentionally added. Complemental analyses with optical microscope and SEM/EDS are also necessary because XRD method cannot distinguish asbestiform from non-asbestiform. The XRD method applied in this study is very effective in the asbestos content analysis of building materials, specially building materials showing high asbestos concentration in residues due to the high loss rate with ashing and acid dissolution procedure.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.18-22
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• 2006

Effects of V substitution of Fe on the magnetic properties of $Fe_3O_4$ have been investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), conversion electron Mossbauer spectroscopy (CEMS), and vibrating sample magnetometry (VSM) measurements on sol-gel-grown films. XRD data indicates that the $V_xFe_{3-x}O_4$ films maintain cubic structure up to x=1.0 with little change of the lattice constant. Analyses on V 2p and Fe 2p levels of the XPS data indicate that V exist as $V^{3+}$ mostly in the $V_xFe_{3-x}O_4$ films with the density of $V^{2+}$ ions increasing with increasing V content. Analyses on the CEMS data indicate that $V^{3+}$ ions substitute tetrahedral $Fe^{3+}$ sites mostly, while $V^{2+}$ ions octahedral $Fe^{2+}$ sites. Results of room-temperature VSM measurements on the films reveal that the saturation magnetization for the x=0.14 sample is larger than that of $Fe_3O_4$, while it becomes smaller than that of $Fe_3O_4$ for $x{\geq}0.5$. The coercivity of the $V_xFe_{3-x}O_4$ films is found to increase with x, attributed to the increase of anisotropy by the substitution of $V^{2+}(d^3)$ ions into the octahedral sites.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.145-149
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• 2004

We have grown piezoelectric oxide films by RF magnetron sputtering using miscut substrates. Films were Brown on(001) $SrTiO_3$ substrates with miscut angles from 0 to 8 degrees toward the (100) direction. Films on high miscut substrates (>$4^{\circ}$) showed almost the pure perovskite phase in x-ray diffraction and were nearly stoichiometric. In contrast, films on exact (001) $SrTiO_3$ contained a high volume fraction of pyrochlore phases. A film on an $8^{\circ}$ miscut substrate exhibits a polarization hysteresis loop with a remnent polarization of 20$\mu$C/$\textrm{cm}^2$ at room temperature.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.792-799
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• 2019

The present study aims to investigate the fluorination of thorium oxide ($ThO_2$) by ammonium hydrogen difluoride ($NH_4HF_2$). Fluorination was performed at room temperature by mixing $ThO_2$ and $NH_4HF_2$ at different molar ratios, which was then left to react for 20 days. Next, the mixtures were analyzed using X-ray diffraction (XRD) at the intervals of 5, 10, 15, and 20 days, followed by the heating of the mixtures at $450-750^{\circ}C$ with argon gas flow. The characterization of $ThF_4$ was established using X-ray diffraction (XRD) and scanning electron microscopy-dispersion X-ray spectroscopy (SEM-EDX). In this study, ammonium thorium fluoride was synthesized through the fluorination of $ThO_2$ at room temperature. The optimum molar ratio in synthesizing ammonium thorium fluoride was 1.0:5.5 ($ThO_2:NH_4HF_2$) with 5 days reaction time. In addition, the heating of ammonium thorium fluoride at $450^{\circ}C$ was sufficient to produce $ThF_4$. Overall, this study proved that $NH_4HF_2$ is one of the fluorination agents that is capable of synthesizing $ThF_4$.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.768-771
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• 2005

The deposition of silicon nitride ($SiN_x$) thin films was carried out on $SiO_2/Si$ substrate at room temperature by reactive dc magnetron sputtering. The analysis of deposited $SiN_x$ films using x-ray photoelectron spectroscopy indicated that the composition of $SiN_x$ films was Si-rich. The deposited $SiN_x$ thin films were annealed by varying annealing temperature and time. X-ray diffraction (XRD) analysis was performed in order to examine the crystallization of Si in $SiN_x$ thin films. The optical and electrical properties of $SiN_x$ thin films were measured for the observation of Si nanodot. As a result, we observed the XRD peaks that might be the Si crystals. As the annealing time and annealing temperature increased, the photoluminescence intensity of $SiN_x$ films gradually increased. The capacitance-voltage characteristics of $SiN_x$ film measured before and after annealing indicated that the trap effect of electrons or holes occurred due to the existence Si nanodots in the $SiN_x$ thin films.