• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.436-439
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• 2002

Recently, It has performed that the basic research of the photoconductive material and the development and application of the digital radiograph detector which is divided into the direct and indirect method. The objective of this study investigate the effect of the electric characteristic about changing the composition of Arsenic in hybrid detector system for compensating a defect of conventional. We fabricated samples using the amorphous Selenium and Arsenic alloy with various concentrations of the Arsenic{seven step 0.1%, 0.3%, 0.5%, 1%, 1.5%, 3%, 5%). And using EFIRON optical adhesives the formed multi-layer$(Gd_{2}O_{2}S(Eu^{2+}))$ composed phosphor layer. X-ray and light sensitivity was measured to study x-ray response characteritics. As results, highest value was measured as output net charge and SNR were $315.7pC/cm^2/mR$ and 99.4 at 0.3%As doping ratio.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1998년도 추계학술대회
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• pp.295-296
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• 1998

With xeroradiography appearance, DR (Digital Radiography) system have been studying for X-ray detection using photoreceptor. Also detection method for receptor charge change have been developing variably. We use photoreceptor material of a-Se(Amorphous Selenium) with high DQE, high SNR(Signal to Noise Ratio) and high transformation efficiency of X-ray signals into electrical signals. After a-Se receptor is uniformly charged by using Arc discharge, X-ray is exposed. Then a-Se receptor produce subtle charge variation and MOSFET detect charge variations. The detected signal pass A/D converter and signal processing by PC. As results, the initial voltage is 8V. It has wide dynamic range needed digital radiography system. In this study, we obtained data with changing kVp(tube potential voltage) and fixed 8mAs(tube current by exposure time) in X-ray system. However MOSFET detector for X-ray signal is not tested X-ray mAs variations. But if MOSFET detector is tested X-ray mAs variation and exactly calibrated multichannel is made and noise-reduction is done, suitable DR system readout method will be done.

• 제어로봇시스템학회논문지
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• 제5권4호
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• pp.471-480
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• 1999

This paper presents design and performance improvement of a new digital tomosynthesis (DTS) system for object-detector synchronous rotation. Firstly, a new DTS system, called OSDR (Object-Detector Synchronous Rotation) is suggested and designed to acquire X-ray digital images. Secondly, the shape distortion of DTS images generated by an image intensifier is modeled. And a new synthesis algorithm, which overcomes the limitations of the existing synthesis algorithm, is suggested to improve the sharpness of the synthesized image. Also an artifact analysis of the DTS system is performed. Thirdly, some performance indices, which evaluate quantitatively performance improvement, are defined. And the experimental verification of the performance improvement is accomplished by the ODSR system newly designed. The advantages of the ODSR system are expressed quantitatively, compared with an existing system.

• 대한방사선기술학회지:방사선기술과학
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• 제40권4호
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• pp.533-542
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• 2017

진단용 X선 영상에서 산란선은 화질을 열화시키는 주요한 원인이다. X선 장치는 필름/스크린을 사용한 아날로그 시스템부터 Imaging plate (IP) 및 평판 검출기(Flat panel detector; FPD)를 사용한 디지털 시스템으로 바뀌어 가고 있다. 그러나 산란 X선 제거를 위한 Grid는 아날로그 시대에 사용됐던 구조부터 큰 변화가 없다. 본 논문에서는 선행연구에서 고안된 산란선 제거율을 향상시키기 위한 간접변환형 평판검출기의 새로운 구조를 다양한 입사 X선을 사용하는 임상현장에서의 활용 가능성을 검토했다. 일반적으로 FPD는 3개의 층으로 구성되어 있다. 신호를 검출하는 화소와 화소 사이에는 전압을 거는 voltage line이나 데이터를 전달하는 data line과 같은 X선 불감영역이 존재한다. 선행연구에서는 이 불감영역에 정확히 맞추어 방사선 불 투과성의 납을 그물 모양으로 substrate layer에 삽입함으로서 검출기 자체가 산란선 제거 효과가 있도록 설계하였다. 새로운 구조의 임상 유용성을 평가하기 위해, 삽입된 그물 모양의 납을 입사 X선에 대해 가로, 세로성분으로 나누어 각각의 성능을 확인하였으며, 동시에 납의 높이를 변화시켜 납 높이가 성능에 미치는 영향을 영상 대조도와 grid 노출 인자를 통해 검토했다. 검출기면에 대해 대각선으로 입사한 X선($0^{\circ}$, $15^{\circ}$, $30^{\circ}$)에 대해서, 입사 X선에 대해 평행한 가로성분이 세로 성분에 비해 높은 영상 대조도와 낮은 그리드 노출 인자를 나타냈으며, 세로성분의 납 높이가 높을수록 본 연구에서 고안한 검출기에 악영향을 미치는 것을 확인했다. 그러므로 본 연구에서 고안한 새로운 FPD 시스템은 FPD의 구조를 방사선검사 조건과 목적에 맞추어 최적화함으로써 임상 의료현장에서의 사용 가능성이 확인되었다.

• Journal of the Optical Society of Korea
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• 제7권4호
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• pp.230-233
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• 2003

This study describes the conceptual design of a soft x-ray microscope system based on a laserbased source for biomedical application with high resolution (${\leq}$50nm). The laboratory scale soft x-ray microscope consists of high power laser plasma x-ray source and grazing incidence mirrors with high reflectivity. The laser plasma source used for developing this system employs Q-switched Nd-YAG pulsed laser. The laser beam is focused on a tantalum (Ta) target. The Wolter type I mirror was used as condenser optics for sample illumination and as objective mirror for focusing on a detector. The fabrication of the Wolter type I mirror was direct internal cutting using ultraprecision DTM. A hydrated biological specimen was put between the two silicon wafers, the center of which was $Si_3N_4$ windows of 100㎚ thickness. The main issues in the future development work are to make a stable, reliable and reproducible x-ray microscope system.

• 한국방사선학회논문지
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• 제15권5호
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• pp.705-713
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• 2021

엑스선 영상 시스템으로부터 획득한 영상의 공간주파수에 대한 해상도를 분석하기 위해 변조전달함수(modulation-transfer function, MTF)를 계산한다. 일반적으로 검출기의 응답함수는 슬릿-카메라를 사용하여 선분포함수(line-spread function, LSF)를 획득하고, 푸리에 변환을 거쳐 변조전달함수를 도출한다. 엑스선이 항상 슬릿-카메라 중심에 입사해야 된다는 조건 때문에 실험자에 의해 발생하는 검출기와 슬릿-카메라의 기울임은 검출기 성능에 영향을 미치게 된다. 이와 더불어 기울임에 확대율이 더해진다면 엑스선 영상 시스템의 성능평가에 문제가 발생할 것이다. 본 연구에서는 실험적 오차에 기인하여 이를 변조전달함수, 즉 푸리에 도메인에서 실험과 분석모델을 해석하였고, 공간주파수에 미치는 영향을 분석하였다. 나아가 다양한 엑스선 영상 시스템에 있어 성능평가가 실시되어야 할 것이고, 실험적 오차는 불가결하게 발생하며 이를 허용할 수 있는 범위에 대한 검토가 이루어져야 한다.

• 한국방사선학회논문지
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• 제3권1호
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• pp.5-9
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• 2009

디지털 방사선 검출기의 주된 연구동향은 영상의 해상도 향상, 대면적화, 동영상 구현 등${\cdots}$ 이라 할 수 있다. 이런 연구는 방사선 변환과정에 따라 크게 직접변환 방식과 간접 변환 방식으로 나눌 수 있으며 각각 고유한 장단점을 내포하고 있다. 간접변환 방식의 경우 형광체의 사용으로 인한 Light scattering 문제로 해상력의 저하 그리고 직접방식의 경우는 낮은 system 안정성과 동영상 구현의 어려움 등이 대표적이라 할 수 있다. 이런 문제를 해결하기 위한 연구로써 액정을 이용한 엑스선 검출기 연구가 진행되었으나 그 구조의 특성상 균일한 액정의 주입이 어려워 제작에 있어 많은 어려움이 있다. 따라서 본 논문에서는 기존의 문제점을 해결할 수 있는 구조를 제안하고 이를 Simulation 통해 제안된 구조의 가능성을 검토해 보았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.424-427
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• 2002

In this papaer, there is a basic research for the development of the Hybrid digital radiation detector with a new system, make up for existing digital radiation detector of direct/indirect method with a weak point. for enhance the efficiency characteristics of signal response from X-ray detector using the a-Se, We make sample with various kinds of layer, through the ratio of As(0.l%,0.3%,0.5%,1%,1.5%,5%,10%). We measure net charge with a leakage current and photo current for electric charateristics. Ratio of As in a-Se consist of 7 stage, It made of using the thermal deposition system, In the made of samples, we made multi layer using the EFIRON optical adhesives from phosphor layer consist of Oxybromide$(BrO_2)$. As a result of X-ray measurement, the best result is ; leakage current(0.30nA/cm2), net charge(610.13pC/cm2/mR) when the condition is voltage(9V/um), 0.3% ratio of As in multi layer(BrO2 + a-Se)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.392-395
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• 2003

For the purpose of digital x-ray imaging, many materials such as $PbI_2$, $HgI_2$, TlBr, CdTe and CdZnTe have been under development for servaral years as direct converter layer. $Hgl_2$ film detector have recently been shown as one of the most promising semiconductor materials to be used as direct converters in x-ray digital radiography. This paper, the $HgI_2$ films are deposited on conductive-coated glass by screen printing, in which $HgI_2$ powder is embedded in a binder and solvent, and the slurry is used to coat the conductive-coated glass. We investigated electrical characteristic of the fabricated $HgI_2$ films. The x-ray response to radiological x-ray generator of 70Kvp using the current integration mode will be reported for screen printing films. These results indicate that $HgI_2$ detectors have high potential as new digital x-ray imaging devices for radiography.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.