• 센서학회지
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• 제23권1호
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of Chest Surgery
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• 제6권1호
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• pp.15-22
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• 1973

The definition of cancer, its diagnosis and its prognosis all depend upon description of growth. To the layman a synonym for cancer is a "growth". There are no quantitative terms for the description of growth or growth rate in clinical use. There has been no attempt to assign values that would define "rapidly" or "slowly" growing. Estimates of growth potentiality are implied in the descriptive phrases "poorly differentiated" or "well differentiated", "highly malignant" or "low grade malignancy". and in systems of grading. These qualifying terms represent a personal impression, clinically useful in prognosis, but relative in nature. They do not lend themselves to uniform application or precise measurement for purpose of comparison. Growth is related to size and time. The volume of tumor depends upon the duration of the period of growth and the rate of growth. If the interval and change in volume are known. the average growth rate can be determined. If the growth rate is determined, and assumed to be constant., the duration of a given tumor and the time of inception can be estimated. The commonest concept of the origin of cancer is that as a result of a mutation involving a single cell, succeeding divisions of cells establish a colony with the characteristics recognizable as cancer. If the growth rate of the hypothetical tumor were constant it could be described in terms of "tumor volume doubling time". In the department of thoracic surgery of St. Mary hospital in Catholic Medical College, a clinical evaluation for the growth rate, degree of malignancy, resectability and prognosis was done on a total 24 cases of primary bronchogenic carcinoma which contour was significant on the chest X-ray film as possible estimating the tumor volume doubling time. The following results were obtained: 1. In the cases of 6.0cm or more in diameter of minor size at operation the resectability rate was lower and in the cases of 60 days or more in the tumor or volume doubling time the resectability rate was higher. 2. If differentiation of cancer cells was lower graded in tissue pathology, the tumor volume was shorter and the resectability rate was lower. 3. The tumor volume doubling time of the primary bronchogenic carcinoma occured more over 60 years of age was slightly shorter than under 60 years of age. 4. The tumor size at operation was more important to evaluate the survival time and prognosis than the tumor volume doubling time because the tumor growth was not always constant, we presume.mor volume doubling time because the tumor growth was not always constant, we presume.

• Tuberculosis and Respiratory Diseases
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• 제40권5호
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• pp.602-609
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• 1993

저자들은 경부 동통과 촉진시 공기 마찰음, 기침을 주소로 내원한 종격동 기흉환자를, 흉부 컴퓨터 촬영 및 개흉 폐조직 검사로 임파구형 간질성 폐렴으로 진단하였다. 또한 동반된 자가면역 질환이나 면역 부전 상태의 유무를 알기 위하여 다양한 혈청학적 검사를 시행하였으며, 그 결과 원발성으로 발생한 임파구형 간질성 폐렴임을 알수 있었으며, 치료적 목적으로 스테로이드 투여를 시도하였으나 임상 양상에 큰 호전을 보이지 않아 세포 독성 약제등의 투여를 고려 중이다. 그러나, 현재까지 확립된 병인 기전이나 치료 방법등에 대한 정설이 없으며 최근 AIDS 환자들에게서의 발생이 많이 보고됨에 따라 이 질환의 원인 및 경과를 예측할 수 있는 지표등에 대한 연구가 계속 되어야 할 것으로 생각된다.

• 한국세라믹학회지
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• 제42권2호
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• pp.104-109
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• 2005

PbO 완충층의 역할을 확인하기 위해, r.f. magnetron sputtering법을 이용하여 p-type (100) Si 기판 위에 $Pt/Pb_{1.1}Zr_{0.53}Ti_{0.47}O_{3}$와 PbO target으로 Pt/PZT/PbO/Si의 MFIS 구조를 제조하였다. MFIS 구조에 완충층으로 PbO를 삽입함으로써 PZT 박막의 결정성이 크게 향상되었고, 박막의 공정온도도 상당히 낮출 수 있었다. 그리고 XPS depth profile 분석 결과, PbO 증착시 기판온도가 PbO와 Si의 계면에서 Pb의 확산에 미치는 영향을 확인하였다. PbO 완충층을 삽입한 MFIS는 높은 메모리 윈도우와 낮은 누설전류 밀도를 가지는 추수한 전기적 특성을 나타내었다. 특히, 기판온도 $300^{\circ}C$에서 증착된 PbO를 삽입한 Pt/PZT(200nm, $400^{\circ}C)PbO(80nm)/Si$는 9V의 인가전압에서 2.OV의 가장 높은 메모리 윈도우 값을 나타내었다.

• 대한치과교정학회지
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• 제26권5호
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• pp.535-546
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• 1996

이 연구는 한국인 하악치열궁 형태를 분류하고, 교두정에서 브라켓 높이의 협면점까지 거리를 계측하여 이상적인 호선 제작에 도움을 얻기위하여 시행되였다. 13세에서 25세사이의 정상적인 교합자 159명의 석고모형을 대상으로 순측 및 협측 교두정을 지나는 하악치열궁선에서 견치간, 제1대구치간 및 제2대구치간 폭경과 이들의 고경을 계측한 다음, 유클리안 거리를 이용한 평균군집분석을 시행하여 치열궁형태를 5가지로 분류하고, 각각의 6차 다항식과 결정계수를 구하였으며, 교두정에서 브라켓 높이의 협면점까지의 거리를 계측하고 비교검토하여 다음의 결과를 얻었다. 1. 5가지 하악치열궁선을 실제의 크기로 작도하고, 1형, 2형, 3형, 4형 및 5형으로 명명하였다. 2. 각각의 치 열궁선은 하악 제2대구치간 폭경으로 표현되는 6차다항식과 결정 계수를 산출하였으며 이 식으로 $97\%$이상 설명이 가능하였다. 3. 각 치열궁선의 분포는 5형이 $24.5\%$로 가장 많았으며, 2형과 3형이 각각 $20.8\%$ 1형은 $17.6\%$, 4형은 $16.3\%$의 분포를 보였다. 4. 한국인의 하악치열궁선은 프랑스인에 비하여 폭경이 넓고 고경이 낮은 특성을 보였다. 5. 교두정에서 브라켓높이의 협면점까지의 거리는 절치가 1.0, 견치는 1.9, 제1소구치는 2.6, 제1 및 제2 대구치는 2.7 이였다.

• Journal of Periodontal and Implant Science
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• 제32권3호
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• pp.643-653
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• 2002

Periodontal supporting tissue goes through destruction by chronic inflammatory periodontal disease as two aspect. One is qualitive aspect such as alteration of periodontium, the other is quantitative aspect such as alveolar bone loss. According to many authors, PDL is responsible for biting force, and there are two mean. for measuring PDL's function - mobility test and biting force test. This study was conducted to compare the biting force with remaining bone level, that is, quantitative aspect of periodontium, in anterior and premolar teeth at periodontal maintenance phase. 17 patients on periodontal maintenance phase during 6 months at minimum were selected for this study. For the same condition, 4 anterior, canine, premolar teeth were tested by MPM-3000 bite-force register at the same time(a.m.l0-12), the same position, the same posture, by the same examiner. Patients of TMI), ill-fitting pros thesis, general disease, malocclusion and the teeth of TFO, absence of opposing teeth, malposition were excluded. Remaining bone level was measured on the panorama X-ray film through 5 level from 1mm below CEJ to root apex. Teeth were examined twice, and bigger one was selected. If the values showed large difference. examinatin was re-done and the mean was selected. The results were as follows ; 1. In the 4 anterior group, as the remaining bone is decreased, the average of maximal biting force is decreased. Especially, at 3/5 bone level, maximal biting force is decreased significantly(p<0.01). 2. In the canine group, as the remaining bone is decreased, the average of maximal biting force is decreased. Especially, at 2/5 bone level, maximal biting force is decreased significantly(p<0.01). 3. In the premolar group, as the remaining bone is decreased, the average of maximal biting force is decreased. Especially, at 3/5 bone level, maximal biting force is decreased significantly(p<0.05). From the results of this study, clinicians could utilize these efficiently when they have to determine the proper restorative materials, time for tooth extraction, treatment plan, prognosis.

• 한국의학물리학회지:의학물리
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• 제10권1호
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• pp.41-46
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• 1999

본 실험은 의료용 가속기로부터 나오는 6MV 광자선과 6 MeV 전자선을 고체 팬텀위의 LiF 열형광 선량계 (TLD-l00)에 쪼여서 수행하였다. TLD-l00의 방사선 반응감도를 증가시키기 위해 TLD-l00 기판 (표면적 3.2 $\times$ 3.2 $\textrm{mm}^2$) 위에 같은 면적의 금속박막 (주석 혹은 금)을 얹어서 실험하였다. SSD l00cm, 방사선장의 크기 10$\times$10 $\textrm{cm}^2$의 조건 하에서 표면 흡수선량을 측정하였다. 측정결과 각 금속들로 인하여 TLD-l00 의 신호강도가 증강된 것이 관측되었다. 그리고 표면 흡수선량이 방사선량에 따라서 매우 선형적인 값을 가지는 것으로 나타났다 .6 MV 광자선의 경우 1 mm 의 금속박막을 TLD-l00 에 얹은 결과 표면 흡수선량이 각 각 14%, 56% 증가되었다 .6MeV의 전자선의 경우에는 금박막은 TL 반응감도가 13% 증가되었으나 주석의 경우에는 전혀 변화가 없었다. 금속박막을 얹은 TLD-l00의 방사선량 반응감도는 금속박막의 전자 입자밀도에 따라 증가하는 것으로 관측되었다. 이것은 TLD-l00보다 큰 전자밀도를 가진 부가물질(금속박막 )로부터 TLD-l00으로 산란전자가 유입되는 데 기인하는 것으로 보인다. 이 결과로부터 금속박막을 얹은 TL 선량계가 치료광자선용 증폭 선량계로서의 역할을 할 수 있을 것임을 시사한다. 즉 금속박막으로 인해서 TLD-l00 의 방사선 량 반응감도가 증가되었으므로 높은 감도의 보다 작은 TL 선량계의 개발이 가능하게 되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• 한국진공학회지
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• 제17권1호
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• pp.28-33
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• 2008

R.F 마그네트론 스퍼터링 방법을 이용하여 Indium tin oxide(ITO)가 증착된 유리기판 위에 PLZT ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) 박막을 제작하였다. 기판온도를 $500^{\circ}C$로 고정하여 증착한 후 급속열처리 방법으로 다양한 온도 ($550-750^{\circ}C$)에서 후열처리 하였다. 후열처리온도의 변화에 따른 PLZT 박막의 결정학적 특성을 X선 회절법을 통하여 분석하였고 원자간력 현미경을 이용하여 박막의 표면 상태를 관찰하였다. 또한 precision material analyzer 을 이용하여 분극이력곡선과 피로특성을 측정하였다. 후 열처리 온도가 증가함에 따라 잔류분극 값(Pr)은 $10.6{\mu}C/cm^2$ 에서 $31.4{\mu}C/cm^2$로 증가하였으며 항전계(Ec)는 79.9 kV/cm에서 60.9 kV/cm로 감소하는 경향을 보였다. 또한 피로특성의 경우 1MHz 주파수에서 ${\pm}5V$의 square wave를 인가하여 측정한 결과 $700^{\circ}C$에서 후열처리한 시편의 경우 $10^9$회 이상의 분극반전을 거듭하였을 때 분극값이 15% 감소하는 결과를 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.