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Influence of Compost Recycling and Magnesium Supplement on Physical and Chemical Traits of Animal Manure Compost

  • Lee, Jin-Eui;Kwag, Jung-Hoon;Ra, Chang-Six
    • Journal of Animal Science and Technology
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    • v.52 no.6
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    • pp.513-519
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    • 2010
  • A series of experiments were performed to study the influence of the following parameters on the physical traits and composition of swine manure compost: (1) addition of magnesium (Mg) at a molar ratio of 1.2 with respect to $PO_4$, and (2) reutilization of compost containing $MgNH_4PO_4{\cdot}6H_2O$ (magnesium ammonium phosphate, MAP). Three independent batch tests were conducted for replication: batch test I-control (C) and Mg added (T), batch test II-C, T and compost recycle ($T_{R1}$), and batch test III-C, T and compost recycle ($T_{R2}$). Magnesium addition and compost reutilization had no adverse effect on the degradation of organic matter. Reuse of the compost, however, had a clear effect on the total nitrogen (TN) and total phosphorus (TP) contents in the final compost. Repeated compost reutilization as a bulking material was resulted in composts rich in N and P. Upon adding the Mg supplement to the composting materials, the ortho-phosphate (OP) to TP ratio decreased due to the MAP crystallization reaction. The decrease in the OP/TP ratio and the increase in the TP content of the compost indicate that water-soluble phosphate is converted into a slow-release phosphate by the formation of crystals during composting. X-ray diffraction analysis of the irregular shaped crystals in the compost indicated that they are MAP crystals and that the crystallization of MAP begins immediately after the addition of the Mg supplement. The Mg addition to composting materials and the reutilization of compost as a bulking material would be a practical means to conserve nutrient content.

Formation of Ni-W-P/Cu Electrodes for Silicon Solar Cells by Electroless Deposition (무전해 도금을 이용한 Si 태양전지 Ni-W-P/Cu 전극 형성)

  • Kim, Eun Ju;Kim, Kwang-Ho;Lee, Duk Haeng;Jung, Woon Suk;Lim, Jae-Hong
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.54-61
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    • 2016
  • Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

Temperature dependence of photocurrent spectra for $AgGaSe_2$ single crystal thin film grown by hot wall epitaxy (Hot Wall Epitaxy(HWE) 법에 의해 성장된 $AgGaSe_2$ 단결정 박막의 광전류 온도 의존성)

  • Hong, Kwang-Joon;Bang, Jin-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.179-180
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    • 2007
  • Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

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Reduction of Scattered Radiation by Air Gap Technique for High Kilovoltage Chest Roentgenography (흉부(胸部) 고관전압(高管電壓) 촬영(撮影)에 있어 Air Gap Technique를 이용한 산란선(散亂線) 경감(輕減)에 관(關)한 연구(硏究))

  • Huh, Joon;Kim, Chang-Kyun;Kang, Hong-Seok;Youn, Chul-Ho;Lee, Sang-Suk;Lim, Han-Young;Song, Jae-Kwan
    • Journal of radiological science and technology
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    • v.3 no.1
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    • pp.57-66
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    • 1980
  • X-ray grid is the most important means to reduce the scattered ray from patients, but alternative way is air gap technique that is another name of Groedel technique. This technique is mainly used in chest radiography. Authors performed an experimental study on the air gap technique for chest radiography and obtained the results as follows; 1. In using the high voltage air technique, scattered ray could be reduced effectively, while the percentage of scattered ray was slightly increased than conventional grid technique. 2. In film contrast, 30cm air gap technique was inferior to 12:1 grid technique and contrast improvement was increased when the object was thicker and higher voltage was used. 3. The patient exposure dose was reduced about $25{\sim}45%$ compared with conventional grid technique by air gap technique used.

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Preparation and Characterization of Pamidronate-loaded PLGA Wafer for the Treatment of Bone Resorption (골 재흡수 치료를 위한 파미드로네이트를 함유한 이식형 생분해성 PLGA 웨이퍼의 제조와 특성결정)

  • 유제영;김상욱;강길선;성하수;정제교
    • Polymer(Korea)
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    • v.26 no.5
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    • pp.680-690
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    • 2002
  • Implantable biodegradable wafers were prepared with pamidronate -loaded poly (L-lactide-co-glycolide) (PLGA, 75 : 25 mole ratio by lactide to glycolide, molecular weight : 20000 and 90000 g/mole) by direct compression method for the sustained release of pamidronate to investigate the possibility for the treatment of bone resorption. Pamidronate-loaded PLGA powders were prepared by means of physical mixing and spray drying with the control of formulation factors and characterized by scanning electron microscope and X-ray diffractometer. The pamidronate-loaded PLGA powders fabricated into wafers by direct compression under the constant pressure and time at room temperature. These wafers were also observed for their structural characteristic, release pattern, and degradation pattern. The release rate of pamidronate increased with increasing their initial loading ratio as well as increasing wafer thickness. The molecular weight of PLGA affects the release pattern : the higher molecular weight of PLGA, the faster release rate. It can be explained that the higher viscosity of high molecular PLGA solution at same concentration tends to aggregate PLGA and pamidronate resulting in unstable pharmaceutical dosage form. This system had advantages in terms of simplicity in design and obviousness of drug release rate and nay be useful as an implantable dosage form for the treatment of aural cholesteatoma.

Growth and Photocurrent Study on the Splitting of the Valence Band for $CuInSe_2$ Single Crystal Thin Film by Hot Wall Epitaxy (Hot Walll Epitaxy (HWE)법에 의한 $CuInSe_2$ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Yun, Seok-Jin;Hong, Gwang-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.234-238
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    • 2004
  • A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

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Effect of Ice-Quenching After Degassing on the Hardness Change During Simulated Porcelain Firing in a Metal-Ceramic Pd-Au-Ag Alloy (Pd-Au-Ag계 금속-도재용 합금의 탈가스 처리 후 급냉 처리가 모의소성과정에서 경도변화에 미치는 영향)

  • Kim, Sung-Min;Shin, Hye-Jung;Kwon, Yong-Hoon;Kim, Hyung-Il;Seol, Hyo-Joung
    • Korean Journal of Dental Materials
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    • v.43 no.4
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    • pp.317-322
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    • 2016
  • The effect of ice-quenching after degassing on the hardness change during simulated porcelain firing in a metal-ceramic Pd-Au-Ag alloy was investigated by means of hardness test, field emission scanning electron microscopic observations, and X-ray diffraction analysis. The hardness decreased by ice-quenching after degassing, which was induced by the homogenization of the ice-quenched specimen. The decreased hardness by ice-quenching after degassing was recovered from the 1st opaque stage which was the first stage of the remaining firing process for bonding porcelain. The microstructural change showed that the increase in hardness during the remaining firing process was caused by precipitation. The ice-quenching after degassing did not affect the hardness change during the subsequent porcelain firing process.

Effects of Growth Rate and III/V Ratio on Properties of AlN Films Grown on c-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

  • Lim, Se Hwan;Shin, Eun-Jung;Lee, Hyo Sung;Han, Seok Kyu;Le, Duc Duy;Hong, Soon-Ku
    • Korean Journal of Materials Research
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    • v.29 no.10
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    • pp.579-585
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    • 2019
  • In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

Ring of Four Almonds and the Omar Khayyam's Triangle in Islamic Art Design (이슬람 예술 디자인에서 회전하는 알몬드와 오마르 하얌의 삼각형)

  • Park, Jeanam;Park, Mingu
    • Journal for History of Mathematics
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    • v.32 no.4
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    • pp.159-173
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    • 2019
  • In this paper, we examine the brief history of the ring of four almonds regarding Mesopotamian mathematics, and present reasons why the Omar Khayyam's triangle, a special right triangle in a ring of four almonds, was essential for artisans due to its unique pattern. We presume that the ring of four almonds originated from a point symmetry figure given two concentric squares used in the proto-Sumerian Jemdet Nasr period (approximately 3000 B.C.) and a square halfway between two given concentric squares used during the time of the Old Akkadian period (2340-2200 B.C.) and the Old Babylonian age (2000-1600 B.C.). Artisans tried to create a new intricate pattern as almonds and 6-pointed stars by subdividing right triangles in the pattern of the popular altered Old Akkadian square band at the time. Therefore, artisans needed the Omar Khayyam's triangle, whose hypotenuse equals the sum of the short side and the perpendicular to the hypotenuse. We presume that artisans asked mathematicians how to construct the Omar Khayyam's triangle at a meeting between artisans and mathematicians in Isfahan. The construction of Omar Khayyam's triangle requires solving an irreducible cubic polynomial. Omar Khayyam was the first to classify equations of integer polynomials of degree up to three and then proceeded to solve all types of cubic equations by means of intersections of conic sections. Omar Khayyam's triangle gave practical meaning to the type of cubic equation $x^3+bx=cx^2+a$. The work of Omar Khayyam was completed by Descartes in the 17th century.

Reliability of the EOS Imaging System for Assessment of the Spinal and Pelvic Alignment in the Sagittal Plane

  • Kim, Sang Bum;Heo, Youn Moo;Hwang, Cheol Mog;Kim, Tae Gyun;Hong, Jee Young;Won, You Gun;Ham, Chang Uk;Min, Young Ki;Yi, Jin Woong
    • Clinics in Orthopedic Surgery
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    • v.10 no.4
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    • pp.500-507
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    • 2018
  • Background: The sagittal alignment of the spine and pelvis is not only closely related to the overall posture of the body but also to the evaluation and treatment of spine disease. In the last few years, the EOS imaging system, a new low-dose radiation X-ray device, became available for sagittal alignment assessment. However, there has been little research on the reliability of EOS. The purpose of this study was to evaluate the intrarater and interrater reliability of EOS for the sagittal alignment assessment of the spine and pelvis. Methods: Records of 46 patients were selected from the EOS recording system between November 2016 and April 2017. The exclusion criteria were congenital spinal anomaly and deformity, and previous history of spine and pelvis operation. Sagittal parameters of the spine and pelvis were measured by three examiners three times each using both manual and EOS methods. Means comparison t-test, Pearson bivariate correlation analysis, and reliability analysis by intraclass correlation coefficients (ICCs) for intrarater and interrater reliability were performed using R package "irr." Results: We found excellent intrarater and interrater reliability of EOS measurements. For intrarater reliability, the ICC ranged from 0.898 to 0.982. For interrater reliability, the ICC ranged from 0.794 to 0.837. We used a paired t-test to compare the values measured by manual and EOS methods: there was no statistically significant difference between the two methods. Correlation analysis also showed a statistically significant positive correlation. Conclusions: EOS showed excellent reliability for assessment of the sagittal alignment of the spine and pelvis.