• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.96-99
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• 2003

본 논문에서는 수치 해석 방법을 이용하여 $In_{x}Ga_{1-x}N/GaN$ (x=0.06~0.1) 양자우물 구조의 에너지 준위를 계산하였다. InGaN 벌크 샘플(bulk sample)의 PL(photoluminescence) 데이터로부터 bowing factor를 결정한 후 InGaN의 유효 에너지 밴드갭을 계산하였고, InGaN/GaN 양자우물 구조의 전도대와 가전자대의 오프셋(offset)을 0.67/0.33으로 정하였다. 다음으로, 양자화 효과에 의한 에너지 변위와 압전장(piezoelectric field)을 제외한 양축 압축 변형(biaxial compressive strain)에 의한 에너지 변위를 고려하여 기저준위 전자와 heavy hole(le-1hh)간의 천이 에너지를 계산하였다. 계산된 천이 에너지는 PL로 측정한 천이 에너지에 비해 약 9~15 meV 크게 관찰되었는데, 이것은 InGaN/GaN 양자우물 계면에 발생하는 압전장 때문인 것으로 생각된다.

• Journal of the Korean Mathematical Society
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• v.42 no.4
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• pp.857-869
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• 2005

Let $(X,\;B,\;{\mu},\;T)$ be a dynamical system and (Y, A, v, S) be a factor. We investigate the relative sequence entropy of a partition of X via the maximal compact extension of (Y, A, v, S). We define relative sequence entropy pairs and using them, we find the relative topological ${\mu}-Kronecker$ factor over (Y, v) which is the maximal topological factor having relative discrete spectrum over (Y, v). We also describe the topological Kronecker factor which is the maximal factor having discrete spectrum for any invariant measure.

• Progress in Medical Physics
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• v.8 no.2
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• pp.3-17
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• 1997

Because a wedged beam consists of attenuated primary photons and scattered radiations from wedge, the spectrum of the wedged beam does not coincide with that of an open beam with same geometry. The aims of current report are to get exact information about whether effects of 15-60$^{\circ}$ wedge for 4 -10 MV photon beams should be considered for dose calculation or not, and to suggest a reference condition for measurement of wedge transmission factor. Percent depth dose of both open and wedged fields with angles of 15, 30, 45, 60$^{\circ}$ for beams of 4 MV(Clinac 4/100, Varian), two 6 MV(Clinac 6/100 and Clinac 2100C, Varian), 10 MV(Clinac 2100C, Varian) X-rays were measured to 30cm deep in water using ionization chambers. Hardening factors of photon beams were calculated with measured PDDs. Both field size factors and transmission factors of wedge filters were measured at d$_{max}$ in water. Beam hardening factors of wedged fields of 4 and 6 MV X-ray were larger than 1 for all wedge angles, field sizes and depths deeper than d$_{max}$ Beam hardening factors for wedge angles 15, 30, 45, 60$^{\circ}$ for 10$\times$10cm were respectively 1.010, 1.014, 1.023 and 1.034 for 4MV X-ray, 1.005, 1.008, 1.019, and 1.024 for 6MV X-ray of Clinac 6/100, 1.011, 1.021, 1.032, 1.036 for 6MV X-ray of Clinac 2100C, and 1.008, 1.012, 1.012 and 1.012 for 10MV X-ray. Beam hardening factors of 10MV X-ray were 1 within 1.2％ difference for all wedge angles, depths and field sizes. It was made clear that for 6MV X-rays, the beam hardening factor depends on treatment machine. The relationship of the factor and depth was linear. Field size factor at d$_{max}$ was independent of wedge angle except for the field of 15$\times$15cm. and maximum difference of the field size factors for the field size was 1.4％ for 4MV X-ray. When the wedge factor is determined, dependence of the factor on field size is negligible at d$_{max}$ but should be considered at deeper depth. Calculating dose distribution or MU, the beam hardening factor should be applied for 4~6MV X-ray beams, but might not be considered for 10MV beam. When wedge transmission factor was determined at d$_{max}$ or in air, field size factors for open field are also applicable to wedged fields, but otherwise, field size factor for each wedge or wedge factor depending on field size should be applied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.167-170
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• 2000

The structural changes and the dielectric properties of $(Ba_{1-x}Ca_x)(Mg_{1/3}Ta_{2/3})O_3$ (x=0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The densities of samples were gradually decreased with increasing x, (BMT=7.69, CMT=5.25 $g/cm^3$). The crystal structure of BMT was a untiltied perovskite structure, however BCMT showed antiphase tilting and antiphase-inphase tilting structure. The dielectric constant($\varepsilon_r$) of the highest value was 33 at x=0.2 (BMT=24, CMT=17). The maximum quality factor was 27,500GHz in BMT. The quality factor· of BCMT was decreased to x<0.2 (5,000GHz), and was gradually increased to x>0.2. The temperature coefficients of dielectric constant was positive at x<0.8, and negative in CMT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.138-139
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• 2006

Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

• Journal of the Korean Mathematical Society
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• v.45 no.6
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• pp.1613-1622
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• 2008

Let G be a graph with vertex set V(G) and edge set E(G), and let g, f be two nonnegative integer-valued functions defined on V(G) such that $g(x)\;{\leq}\;f(x)$ for every vertex x of V(G). We use $d_G(x)$ to denote the degree of a vertex x of G. A (g, f)-factor of G is a spanning subgraph F of G such that $g(x)\;{\leq}\;d_F(x)\;{\leq}\;f(x)$ for every vertex x of V(F). In particular, G is called a (g, f)-graph if G itself is a (g, f)-factor. A (g, f)-factorization of G is a partition of E(G) into edge-disjoint (g, f)-factors. Let F = {$F_1$, $F_2$, ..., $F_m$} be a factorization of G and H be a subgraph of G with mr edges. If $F_i$, $1\;{\leq}\;i\;{\leq}\;m$, has exactly r edges in common with H, we say that F is r-orthogonal to H. If for any partition {$A_1$, $A_2$, ..., $A_m$} of E(H) with $|A_i|=r$ there is a (g, f)-factorization F = {$F_1$, $F_2$, ..., $F_m$} of G such that $A_i\;{\subseteq}E(F_i)$, $1\;{\leq}\;i\;{\leq}\;m$, then we say that G has (g, f)-factorizations randomly r-orthogonal to H. In this paper it is proved that every (0, mf - (m - 1)r)-graph has (0, f)-factorizations randomly r-orthogonal to any given subgraph with mr edges if $f(x)\;{\geq}\;3r\;-\;1$ for any $x\;{\in}\;V(G)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.806-808
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• 2001

In this thesis, specimens was manufactured in general method annexing PMB-PZT system ceramic, and the following conclusion has been deduced. In XRD, the crystal structure of ceramic has the tetragonal structure which is close to rombohedral structure, and consequently the specimen characterized by MPB was manufactured. According to dopping with xPMB, electromechanical factor(kp) little is changed. kp was maximum value 23.37[%] at xPMB 0.03[mol%]. mechanical quality factor(Qm) was maximum value 237.04 at xPMB 0.03[mo1%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.578-580
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• 2002

In this thesis, specimens was manufactured in general method annexing PMB-PZT system ceramic, and the following conclusion has been deduced. In XRD, the crystal structure of ceramic has the tetragonal structure which is close to rombohedral structure, and consequently the specimen characterized by MPB was manufactured. According to dopping with xPMB, electromechanical factor(kp) little is changed. kp was maximum value 23.37[%] at xPMB 0.03[mol%]. mechanical quality factor(Qm) was maximum value 237,04 at xPMB 0.03[mol%].

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.67-70
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• 2010

X-ray absorption rate and multiplication factor of X-ray detector were calculated with Garfield code. High Z (= atomic number) was important factor to increase the absorption rate but low Z is also important to increase the multiplication. Five different gas composition were examined under the condition of 1400 V bias and 400 um gap. Xe 100% gas showed the highest absorption rate and He 96% + isobutene 4% showed the highest multiplication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.356-361
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• 2001

The structureal, dielectric and piezoelectric properties of Pb[(Sb$\_$1/2/Nb$\_$1/2/)$\_$x/-(Ni$\_$1/3/Nb$\_$2/3/)$\_$0.15-x/-(Zr$\_$y/Ti$\_$1-y/)$\_$0.85/]O$_3$(x=0∼0.05, y=0.47∼0.52) ceramics were investigated with the substitution of Pb(Sb$\_$1/2/Nb$\_$1/2/)O$_3$(abbreviated PSN) and the Zr/Ti ratio. At Zr/Ti ratio of 50/50, tetragonality was decreased and grain size abruptly decreased with the increase of PSN substitution. Curie temperature was decreased and dielectric constant increased with the substitution of PSN. The coercive field increased and remnant polarization decreased with the substitution of PSN. Electromechanical coupling factor(k$\_$p/) showed the highest value of 0.622 at 1mol% PSN, but mechanical quality factor(Q$\_$m/) showed the minimum value at that composition. Dielectric constant and electromechanical coupling factor with the Zr/Ti ratio showed maximum values at Zr/Ti ratio of 50/50 and mechanical quality factor showed minimum values near the Zr/Ti ratio of 50/50.