• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
• /
• pp.96-99
• /
• 2003

본 논문에서는 수치 해석 방법을 이용하여 $In_{x}Ga_{1-x}N/GaN$ (x=0.06~0.1) 양자우물 구조의 에너지 준위를 계산하였다. InGaN 벌크 샘플(bulk sample)의 PL(photoluminescence) 데이터로부터 bowing factor를 결정한 후 InGaN의 유효 에너지 밴드갭을 계산하였고, InGaN/GaN 양자우물 구조의 전도대와 가전자대의 오프셋(offset)을 0.67/0.33으로 정하였다. 다음으로, 양자화 효과에 의한 에너지 변위와 압전장(piezoelectric field)을 제외한 양축 압축 변형(biaxial compressive strain)에 의한 에너지 변위를 고려하여 기저준위 전자와 heavy hole(le-1hh)간의 천이 에너지를 계산하였다. 계산된 천이 에너지는 PL로 측정한 천이 에너지에 비해 약 9~15 meV 크게 관찰되었는데, 이것은 InGaN/GaN 양자우물 계면에 발생하는 압전장 때문인 것으로 생각된다.

• 대한수학회지
• /
• 제42권4호
• /
• pp.857-869
• /
• 2005

Let $(X,\;B,\;{\mu},\;T)$ be a dynamical system and (Y, A, v, S) be a factor. We investigate the relative sequence entropy of a partition of X via the maximal compact extension of (Y, A, v, S). We define relative sequence entropy pairs and using them, we find the relative topological ${\mu}-Kronecker$ factor over (Y, v) which is the maximal topological factor having relative discrete spectrum over (Y, v). We also describe the topological Kronecker factor which is the maximal factor having discrete spectrum for any invariant measure.

• 한국의학물리학회지:의학물리
• /
• 제8권2호
• /
• pp.3-17
• /
• 1997

쐐기필터를 통과한 방사선은 잦아진 일차선의 스펙트럼과 일치하지 않는다. 4~10 MV 엑스선의 15~60$^{\circ}$ 쐐기조사면에 대한 선량계산에서 쐐기에 의한 엑스선의 경화효과의 적용과, 조사면계수의 보정의 필요성 여부를 확립하고, 쐐기필터의 투과율 측정조건을 확립하는 것이 이 연구의 목적이다. 4 MV(Clinae 4/100, Varian), 6 MV(Clinae 6/100 와 Clinae 2100C, Varian), 10 MV(Clinae 2100C, Varian) 엑스선의 민조사면과 15, 30, 45, 60$^{\circ}$의 쐐기조사면의 깊이선량분포를 이온함으로 물에서 깊이 30 cm까지 측정하였다. 측정된 깊이선량율을 이용하여 광자선경화 계수를 계산하였다. 쐐기필터의 조사면계수와 투과율은 최대선량점 깊이(d$_{max}$)에서 측정하였다. 4MV 엑스선과 6MV 엑스선의 쐐기각과 쐐기조사면의 크기, d$_{max}$ 보다 갚은 곳에서 깊이에 관계없이 광자선경화계수는 1보다 컸으며, 쐐기각과 깊이에 따라 증가하는 추세를 보였으나 조사면크기에는 거의 무관하였다. 조사면크기 l0$\times$10$\textrm{cm}^2$에 대해 15cm 깊이에서 4MV 엑스선의 광자선경화계수는 15, 30, 45, 60$^{\circ}$ 쐐기각에 대하여 각각 1.010, 1.014, 1.023, 1.034 이였으며, Clinae 6/100 의 6MV 엑스선의 경우는 각 쐐기각에 대하여 1.005, 1.008, 1.019, 1.024, Clinae 2100C 의 6MV 엑스선의 경우는 각각 1.011, 1.021, 1.032, 1.036, 10MV 엑스선의 경우는 각각 1.008, 1.012, 1.012, 1.012였다. 10MV 엑스선의 경우는 광자선경화 계수가 1.2% 이내로 1이었다. 6MV 엑스선의 경우 광자선경화계수는 치료기의 영향도 있음이 밝혀졌다. 광자선경화계수와 깊이는 선형관계였다. d$_{max}$에서 쐐기필터에 대한 출력계수는 민조사면에 대한 값과 비교해서 15$\times$15a14$\textrm{cm}^2$ 크기의 조사면을 제외하고는 거의 일치하였으며, 최대 차이는 4MV 엑스선에 대한 것으로서 1.4%였다. 쐐기투과율을 정할 때 측정하는 위치의 깊이가 d$_{max}$인 경우는 조사면크기에 대한 의존성을 무시할 수 있지만 다른 깊이에서는 그렇지 않다. 4~6MV 광자선의 쐐기조사면에 대한 선량분포나 MU계산에서 광자선경화계수가 고려되어야 할 것이다. 그러나 10MV 엑스선의 경우는 무시해도 될 것이다. 쐐기 투과율을 정하는 위치가 d$_{max}$ 나 공기중이라면 민조사변에 대한 출력계수를 적용할 수 있지만 다른 깊이에서는 쐐기필터 각각에 대한 출력계수를 또는 조사면크기에 따른 쐐기투과율을 적용해야 할 것이다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.167-170
• /
• 2000

The structural changes and the dielectric properties of $(Ba_{1-x}Ca_x)(Mg_{1/3}Ta_{2/3})O_3$ (x=0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The densities of samples were gradually decreased with increasing x, (BMT=7.69, CMT=5.25 $g/cm^3$). The crystal structure of BMT was a untiltied perovskite structure, however BCMT showed antiphase tilting and antiphase-inphase tilting structure. The dielectric constant($\varepsilon_r$) of the highest value was 33 at x=0.2 (BMT=24, CMT=17). The maximum quality factor was 27,500GHz in BMT. The quality factor· of BCMT was decreased to x<0.2 (5,000GHz), and was gradually increased to x>0.2. The temperature coefficients of dielectric constant was positive at x<0.8, and negative in CMT.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.138-139
• /
• 2006

Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

• 대한수학회지
• /
• 제45권6호
• /
• pp.1613-1622
• /
• 2008

Let G be a graph with vertex set V(G) and edge set E(G), and let g, f be two nonnegative integer-valued functions defined on V(G) such that $g(x)\;{\leq}\;f(x)$ for every vertex x of V(G). We use $d_G(x)$ to denote the degree of a vertex x of G. A (g, f)-factor of G is a spanning subgraph F of G such that $g(x)\;{\leq}\;d_F(x)\;{\leq}\;f(x)$ for every vertex x of V(F). In particular, G is called a (g, f)-graph if G itself is a (g, f)-factor. A (g, f)-factorization of G is a partition of E(G) into edge-disjoint (g, f)-factors. Let F = {$F_1$, $F_2$, ..., $F_m$} be a factorization of G and H be a subgraph of G with mr edges. If $F_i$, $1\;{\leq}\;i\;{\leq}\;m$, has exactly r edges in common with H, we say that F is r-orthogonal to H. If for any partition {$A_1$, $A_2$, ..., $A_m$} of E(H) with $|A_i|=r$ there is a (g, f)-factorization F = {$F_1$, $F_2$, ..., $F_m$} of G such that $A_i\;{\subseteq}E(F_i)$, $1\;{\leq}\;i\;{\leq}\;m$, then we say that G has (g, f)-factorizations randomly r-orthogonal to H. In this paper it is proved that every (0, mf - (m - 1)r)-graph has (0, f)-factorizations randomly r-orthogonal to any given subgraph with mr edges if $f(x)\;{\geq}\;3r\;-\;1$ for any $x\;{\in}\;V(G)$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.806-808
• /
• 2001

In this thesis, specimens was manufactured in general method annexing PMB-PZT system ceramic, and the following conclusion has been deduced. In XRD, the crystal structure of ceramic has the tetragonal structure which is close to rombohedral structure, and consequently the specimen characterized by MPB was manufactured. According to dopping with xPMB, electromechanical factor(kp) little is changed. kp was maximum value 23.37[%] at xPMB 0.03[mol%]. mechanical quality factor(Qm) was maximum value 237.04 at xPMB 0.03[mo1%].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.578-580
• /
• 2002

In this thesis, specimens was manufactured in general method annexing PMB-PZT system ceramic, and the following conclusion has been deduced. In XRD, the crystal structure of ceramic has the tetragonal structure which is close to rombohedral structure, and consequently the specimen characterized by MPB was manufactured. According to dopping with xPMB, electromechanical factor(kp) little is changed. kp was maximum value 23.37[%] at xPMB 0.03[mol%]. mechanical quality factor(Qm) was maximum value 237,04 at xPMB 0.03[mol%].

• 반도체디스플레이기술학회지
• /
• 제9권4호
• /
• pp.67-70
• /
• 2010

X-ray absorption rate and multiplication factor of X-ray detector were calculated with Garfield code. High Z (= atomic number) was important factor to increase the absorption rate but low Z is also important to increase the multiplication. Five different gas composition were examined under the condition of 1400 V bias and 400 um gap. Xe 100% gas showed the highest absorption rate and He 96% + isobutene 4% showed the highest multiplication.

• 한국전기전자재료학회논문지
• /
• 제14권5호
• /
• pp.356-361
• /
• 2001

The structureal, dielectric and piezoelectric properties of Pb[(Sb$\_$1/2/Nb$\_$1/2/)$\_$x/-(Ni$\_$1/3/Nb$\_$2/3/)$\_$0.15-x/-(Zr$\_$y/Ti$\_$1-y/)$\_$0.85/]O$_3$(x=0∼0.05, y=0.47∼0.52) ceramics were investigated with the substitution of Pb(Sb$\_$1/2/Nb$\_$1/2/)O$_3$(abbreviated PSN) and the Zr/Ti ratio. At Zr/Ti ratio of 50/50, tetragonality was decreased and grain size abruptly decreased with the increase of PSN substitution. Curie temperature was decreased and dielectric constant increased with the substitution of PSN. The coercive field increased and remnant polarization decreased with the substitution of PSN. Electromechanical coupling factor(k$\_$p/) showed the highest value of 0.622 at 1mol% PSN, but mechanical quality factor(Q$\_$m/) showed the minimum value at that composition. Dielectric constant and electromechanical coupling factor with the Zr/Ti ratio showed maximum values at Zr/Ti ratio of 50/50 and mechanical quality factor showed minimum values near the Zr/Ti ratio of 50/50.