• Nuclear Engineering and Technology
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• v.26 no.1
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• pp.90-99
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• 1994

One of the major phenomena occurring in defective fuel rods is the oxidation of UO$_2$ fuel pellets from UO$_2$ to UO$_{2+}$x/ by the oxygen Produced from the dissociation of the steam in the Pellet-to-clad gap, which leads to the enhancement of fission gas release. In this paper, the oxidation kinetics of defective fuel rods was analyzed on the basis of operating conditions of the reactor and defective fuel rod itself. Oxidation kinetics of the fuel pellet was determined under the assumption that the gap is filled with the saturated steam of 150 atm and an enhancement factor for fission gas release was introduced to take into account the effect of fuel oxidation on fission gas release. Comparison with experimental data shows that the enhancement factor predicts well the increased fission gas release due to the oxidation of UO$_2$fuel pellets.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.12
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• pp.4044-4052
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• 1996

Planar images of OH and $O_{2}$ with tunable KrF excimer laser which has a) 0.5 $cm^{-1}$ / linewidth, b) 0.5 nm tuning range, c) 150 mJ pulse energy, and d) 20 ns pulse width are obtained to determine spatial distributions of OH and $O_{2}$ in premixed $C_{3}$H$_{8}$ /O$_{2}$ flame. The technique is based on planar laser induced pre-dissociative fluorescence(PLIPF) in which collisional quenching is almost avoided because of the fast pre-dissociation. Dispersed LIPF spectra of OH and $O_{2}$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and $O_{2}$, OH and $O_{2}$ are excited on the P$_{2}$(8) line of the $A^{2}$.SIGMA.$^{+}$(v'= 3)-X$^{2}$.PI.(v'||'||'&'||'||'quot;= 0) band and R(17) line of the Schumann-Runge band B$^{3}$.SIGMA.$_{u}$ $^{[-10]}$ (v'= 0)- X$^{3}$.SIGMA.$_{g}$ $^{[-10]}$ (v'||'||'&'||'||'quot;= 6), respectively. Dispersed OH and $O_{2}$ spectra show an excellent agreement with simulated spectrum and previous works done by other group respectively. It is confirmed that OH widely distributed around flame front area than $O_{2}$.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.6-12
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• 2014

In the present work, $WO_3$ and $WO_3-TiO_2$ were prepared by the chemical deposition method. Structural variations, surface state and elemental compositions were investigated for preparation of $WO_3-TiO_2$ sonocatalyst. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM) were employed for characterization of these new photocatalysts. A rhodamine B (Rh.B) solution under ultrasonic irradiation was used to determine the catalytic activity. Excellent catalytic degradation of an Rh.B solution was observed using the $WO_3-TiO_2$ composites under ultrasonic irradiation. Sonocatalytic degradation is a novel technology of treating wastewater. During the ultrasonic treatment of aqueous solutions sonoluminescence, cavitaties and "hot spot" occurred, leading to the dissociation of water molecules. In case of a $WO_3$ coupled system, a semiconductor coupled with two components has a beneficial role in improving charge separation and enhancing $TiO_2$ response to ultrasonic radiations. In case of the addition of $WO_3$ as new matter, the excited electrons from the $WO_3$ particles are quickly transferred to $TiO_2$ particle, as the conduction band of $WO_3$ is 0.74 eV which is -0.5 eV more than that of $TiO_2$. This transfer of charge should enhance the oxidation of the adsorbed organic substrate. The result shows that the photocatalytic performance of $TiO_2$ nanoparticles was improved by loading $WO_3$.

• Korean Journal of Soil Science and Fertilizer
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• v.37 no.6
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• pp.378-382
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• 2004

Soil pH is an important indicator for soil reactions and crop growth. pH buffer capacity and lime requirements are necessary to comprehend and manage soils well. The characteristics related with soil pH were analyzed and 5 field trials were conducted to elucidate pH buffer capacity of soil and lime requirements and liming factor for Korean acid soils. Soil minerals were analyzed for the soil of 2 years after treating $CaCO_3$ using X-ray diffraction. The amount of neutralized $H^+$ was regarded as the exchangeable aluminium overcoming ${\Delta}pH$, because pH buffer capacity of soil depended on exchangeable aluminium. Lime requirement was somewhat similar to the KCl exchangeable aluminium and it was also affected by the exchangeable cation by added lime. X-ray diffraction analyses revealed that an aluminium dissociation from Korean acid soils was equilibrated with kaolin minerals and changed into anorthite ($CaAl_2Si_2O_8$) by neutralizing with $CaCO_3$. Neutralizing process was composed of changing process of $Al^{3+}$ into $H^+$ and $Al(OH)_4{^-}$ ionic species and of neutralizing $H^+$ by, the amount of which was lime requirement. The fact that anorthite dissociates an aluminium ion higher than kaolinite does enabled to consider a liming factor (LF) the content of exchangeable cation and ${\Delta}pH$, $LF=1.5+0.2{\times}{\sum} Cations{\times}{\Delta}pH$.

• Analytical Science and Technology
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• v.13 no.2
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• pp.173-178
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• 2000

A new open-chain ligand containing two phenol groups, 1, 14-Bis (2-hydroxybenzyl)-2, 6, 9, 12-tetraazatetradecane(bsated) was synthesized as its tetrahydrochloride salt and characterized by elemental analysis, mass, infrared and NMR. Its proton dissociation constants ($logK^n{_H}$) and stability constants ($logK_{ML}$) toward $Co^{2+}$, $Ni^{2+}$, $Cu^{2+}$ and $Zn^{2+}$ were determined at $25^{\circ}C$ and 0.10M($KNO_3$) ionic strength in aqueous solution by potentiometry. The X-ray structure of its copper (II) complex [Cu(bsated)]$(ClO_4)_2$ was reported: Monoclinic space group $P2_1/n$, $a=17.856(4){\AA}$, $b=17.709(1){\AA}$, $c=8.539(2){\AA}$, $V=2700(2){\AA}$ with Z=4. Electrochemical studies of [Cu(bsated)]$(ClO_4)_2$ complex in dimethyl sulfoxide (DMSO) solution containing tetrabutylammonium perchlorate (supporting electrolyte) were carried out by cyclic voltammograms (CV) and normal pulse voltammetry (NPV).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of Microbiology and Biotechnology
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• v.18 no.3
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• pp.503-511
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• 2008

An edible marine red alga, Grateloupia filicina, collected from Jeju Island of Korea was hydrolyzed by cheap food-grade carbohydrases (Viscozyme, Celuclast, AMC, Termamyl, and Ultraflo) to investigate its anticoagulant activity. Among the tested enzymatic extracts of G. filicina, a Termamyl extract showed the highest anticoagulant activity. Anion-exchange chromatography on DEAE-cellulose and gel-permeation chromatography on Sepharose-4B were used to purify the active polysaccharide from the crude polysaccharide fraction of G. filicina. The purified sulfated polysaccharide (0.42 sulfate/total sugar) showed ${\sim}1,357kDa$ molecular mass and was comprised mainly of galactose(98%) and 1-2% of glucose. The sample showed potential anticoagulant activity on activated partial thromboplastin time (APTT) thrombin time (TT) assays. The purified G. filicina anticoagulant (GFA) inhibited the coagulation factor X (92%), factor II (82%), and factor VII (68%) of the coagulation cascade, and the molecular interaction (protein-polysaccharide) was highly enhanced in the presence of ATIII (antithrombin III). The dissociation constant of polysaccharide towards serine proteins decreased in the order of FXa (58.9 nM) >FIIa (74.6 nM) >FVII (109.3 nM). The low/less cytotoxicity of the polysaccharide benefits its use in the pharmaceutical industry; however, further studies that would help us to elucidate the mechanism of its activity are needed.