• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.202-209
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• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.143-150
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• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.5
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• pp.359-366
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• 2013

This work is investigated for the catalytic decomposition of hydrogen iodide (HI). Platinum was used as active material by loading on $ZrO_2-SiO_2$ mixed oxide in HI decomposition reaction. To obtain high and stable conversion of hydrogen iodide in severe condition, it was required to improve catalytic activity. For this reason, a method increasing dispersion of platinum was proposed in this study. In order to get high dispersion of platinum, zirconia was incorporated in silica by sol-gel synthesis. Incorporating zirconia influence increasing platinum dispersion and BET surface area as well as decreasing deactivation of catalysts. It should be able to stably product hydrogen for a long time because of inhibitive deactivation. HI decomposition reaction was carried out under the condition of $450^{\circ}C$ and 1 atm in a fixed bed reactor. Catalysts analysis methods such as $N_2$ adsorption/desorption analysis, X-ray diffraction, X-ray fluorescence, ICP-AES and CO gas chemisorption were used to measurement of their physico-chemical properties.

• Journal of the Mineralogical Society of Korea
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• v.23 no.3
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• pp.199-209
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• 2010

Coal gasification technology in the sector of domestic clean coal technologies is being into the limelight since recent dramatic rise of international oil price. In this study, we used a low rank coal from Inner Mongolia, China as a starting material for gasification. Various properties including optical, mineralogical, X-ray spectroscopic, X-ray diffraction, and drying property were measured and tested in order to estimate the suitability of the coal to gasification. The coal was identified as a brown coal of lignite group from the measurement of vitrinite reflectance. The coal has very low slagging and fouling potentials, and the ignition temperature is about $250^{\circ}C$. The major impurities consist of quartz, siderite, and clay minerals. Additionally, the coal had moisture content above 28%. Tests for finding effective drying method showed that the microwave drying is more effective than thermal drying.

• Journal of the Korea Concrete Institute
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• v.23 no.1
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• pp.121-127
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• 2011

In this study, possible use of indigenous natural loess (Hwangtoh) as a new binding material via geopolymerization process is examined. Hwangtoh pastes with four different mix proportions of varying alkali liquid concentrations (6 M, 8 M) and the constituents of the binder as well as the alkali liquid at a constant liquid-to-binder ratio of 0.55 were prepared. Analysis of the natural loess (Hwangtoh) paste was carried out as follows : 1) Measurement of compressive strength and weight of cubic specimens versus curing time; 2) Analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) about reaction product; 3) Porosity analysis of hardened Hwangtoh paste. The result showed that it is possible to prepare Hwangtoh paste with 29.1 MPa at the age of 7 day by using alkali solution (made as 1 : 4.5 the mass ratio of liquefied $Na_2SiO_3$ and NaOH solution and applying the curing temperature of $60^{\circ}C$). Compressive strength development with respect to the degree of moisture evaporation from the paste seems to be independent of curing temperature. Therefore, it seems that higher early strength of the paste specimens cured at higher temperature can be attributed to both higher rate of reaction and moisture evaporation.

• Elastomers and Composites
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• v.37 no.1
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• pp.7-13
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• 2002

In this study, mechanical properties of PVC complexes containing the gypsum (Namhae Chemical Co.) which contains phosphte, CaO, etc., Pb-species stabilizer, and $CaCO_3$ were investigated as a function or the content. As a result, mechanical properties increased when the gypsum was mixed with PVC at the extent of 8.46wt%. From this result, it is suggested that the gypsum containing phosphate and CaO is compatible with PVC. Thermogravimetric analysis(TGA) showed that pyrolysis started about at $275^{\circ}C$, and residual weight(%) increased with the amount of the gypsum, and differential scanning calorimetry (DSC) showed that $T_m,\;T_g$ had the maximum and minimum value respectively when the gypsum was mixed with PVC at the extent of 8.46wt%. Comparing all the results, both mechanical and thermal properties of PVC complex were improved. The X-ray diffraction measurement also showed their blonds and structures.

• Journal of the Korean Chemical Society
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• v.48 no.5
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• pp.504-509
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• 2004

The reaction of Cu metal with mixed alkali metal polyselenide flux ($KNaSe_x$) produced large plate-like crystals of $KCu_4Se_3$. The structure of $KCu_4Se_3$, determined with X-ray single crystal diffraction techniques, is tetragonal (P4/mmm, a=4.013(1))${\AA}$, c=9.712(1))${\AA}$, z=1, R=6.7%). The structure is composed $[Cu_4Se_3]_n^{n-}$double layers which are made of fused anti PbO-type Cu2Se2 layers. Temperature variable resistivity measurement on single crystal of $KCu_4Se_3$ shows metallic behavior ranging from $1.8{\times}10^{-4}{\Omega}{\cdot}cm$ (at 300 K) to $1.0{\times}10^{-6}{\Omega}{\cdot}cm$ (at 20 K).

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.