• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.437-442
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• 1996

High quality $YBa_2Cu_3O_y$(YBCO) thin films for directly coupled dc superconducting quantum interference device (SQUID) were fabricated by pulsed laser deposition. Several critical parameters have been optimized through systematic studies. Thus, the films showing the $T_c$ of above 91K and $J_c$ of above$2\times10^6A/cm^2$ at 77K were routinely obtained. Extensive AFM and X-ray diffraction studies have been conducted for morphological and structural analyses. The directly coupled DC-SQUIDs were fabricated from the YBCO thin films deposited on $SrTiO_3$ bicrystals under the optimized conditions. The measurement on $2I_c$ and swing voltage give 200$\mu$A and 17$\mu$V at 77K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.124-130
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity. and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• Journal of Powder Materials
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• v.11 no.3
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• pp.247-252
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• 2004

Recently, it has been found that mechanical alloying (MA) facilitates the nanocomposites formation of metal-metal oxide systems through solid-state reduction during ball milling. In this work, we studied the MA effect of Fe$_{3}$O$_{4}$-M (M = Al, Ti) systems, where pure metals are used as reducing agents. It is found that composite powders in which $Al_{2}$O$_{3}$ and TiO$_{2}$ are dispersed in $\alpha$-Fe matrix with nano-sized grains are obtained by mechanical alloying of Fe$_{3}$O$_{4}$ with Al and Ti for 25 and 75 hours, respectively. It is suggested that the large negative heat associated with the chemical reduction of magnetite by aluminum is responsible for the shorter MA time for composite powder formation in Fe$_{3}$O$_{4}$-Al system. X-ray diffraction results show that the reduction of magnetite by Al and Ti if a relatively simple reaction, involving one intermediate phase of FeAl$_{2}$O$_{4}$ or Fe$_{3}$Ti$_{3}$O$_{10}$. The average grain size of $\alpha$-Fe in Fe-TiO$_{2}$ composite powders is in the range of 30 nm. From magnetic measurement, we can also obtain indirect information about the details of the solid-state reduction process during MA.

• Journal of Powder Materials
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• v.17 no.6
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• pp.464-469
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• 2010

The Cu nanofluid in ethylene glycol was prepared by electrical explosion of wire, a novel one-step method. The X-ray diffraction, field emission scanning electron microscope and transmission electron microscope were used to study the properties of Cu nanoparticles. The results showed that the nanoparticles were consisted of pure face-centered cubic structure and near spherical shape with average grain size of 65 nm. Ultraviolet-visible spectroscopy (UV-Vis) confirmed Cu nanoparticles with a single absorbance peak of Cu surface plasmon resonance band at 600 nm. The nanofluid was found to be stable due to high positive zeta potential value, +51 mV. The backscattering level of nanofluid in static stationary was decreased about 2% for 5 days. The thermal conductivity measurement showed that Cu-ethylene glycol nanofluid with low concentration of nanoparticles had higher thermal conductivity than based fluid. The enhancement of thermal conductivity of nanofluid at a volume fraction of 0.1% was approximately 5.2%.

• Journal of Surface Science and Engineering
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• v.43 no.2
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• pp.51-56
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• 2010

The zinc electroplating with respect to the chloride concentration was investigated by X-ray diffraction(XRD), scanning electron microscope (SEM), and cathodic polarization measurement. The cathodic overpotential during electroplating was first decreased and then increased with increase of chloride concentration in electrolyte. The decreased cathodic overpotential leads to preferred orientation of (002) plane, high current efficiency and satisfactory zinc deposits. The increased cathodic overpotential causes random orientation, low current efficiency and edge burning. The cathodic overpotential was affected by chloride concentration in electrolyte, not by the kind of chloride, such as NaCl and KCl. An optimized chloride concentration was 3 M for zinc electroplating. Also, it is considered that NaCl can be a alternation for KCl as a main salt of zinc electroplating bath.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.108-109
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• 2007

Microstructure and electrical properties of Ga-doped ZnO (GZO) films grown on $Al_2O_3$ templates by Pulsed Laser Deposition (PLD) are investigated utilizing X-ray diffraction method and Hall measurement, respectively. In order to determine the optimized operating condition of the PLD, statistical design of experiment (DOE) is employed. It provides the systematic and efficient methodology for characterization and modeling of PLD processing with a relatively small number of experiments. The most optimized recipe of the process factors is obtained by response optimizer in Minitab.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.60-61
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• 2007

IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.412-413
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• 2007

We report on the electrical, optical, and structural properties of indium zinc tin oxide (IZTO) anode films grown at room temperature on glass substrate. The IZTO anode films grown by a RF magnetron sputtering were investigated as functions of RF power, working pressure, and process time in pure Ar ambient. To investigate electrical, optical and structural properties of IZTO anode films, 4-point probe, Hall measurement, UV/Vis spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM), and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $13.88\;{\Omega}/{\square}$, average transmittance above 80 % in visible range were obtained from optimized IZTO anode films grown on glass substrate. These results shown the amorphous structure regardless of RF power and working pressure due to low substrate temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.141-141
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• 2000

In situ surface magneto-optic Kerr effect(SMOKE), X-ray photoelectron spectroscopy(XPS) and low energy electron diffraction(LEED) were used to study magnetic and structural properties of ultrathin Fe films grown on the Pd(111) surface. The SMOKE measurement showed strong enhancement of ferromagnetism after proper annealing process. Simultaneous changes in morphology was checked by LEED and XPS. After room temperature Fe deposition. longitudinal magnetization appeared above a critical thickness between 2.0 and 2.5 monolayers. When annealed at 450K, 2.0 monolayer Fe film exhibited boty longitudinal and polar magnetizations while 3.0 and 5.5 monolayer films showed little changes. After annealing at 600K, both magnetizations were totally destroyed in 2.0 monolayer film, but longitudinal magnetization was enhanced in 3.0 monolayer film. In the case of 5.5 monolayer film, it was only after 660K annealing that the enhancement of the longitudinal magnetization was observed. It was concluded that the surface flatness and the amount of intermixing were critical in the development of surface magnetism of this system.