• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.29-30
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• 2001

This paper presents some results of plasma nitriding on hard chromium deposit. The substrates were C45 steel and $30~50{\;}\mu\textrm{m}$ of chromium deposit by electroplating was formed. Plasma nitriding was carried out in a plasma nitriding system with $95NH_3{\;}+{\;}SCH_4$ atmosphere at the pressure about 600 Pa and different temperature from $450^{\circ}C{\;}to{\;}720^{\circ}C$ for various time. Optical microscopy and X-ray diffraction were used to evaluate the characteristics of surface nitride layer formed by nitrogen diffusion from plasma atmosphere inward iCr coating and interface carbide layer formed by carbon diffusion from substrate outward Cr coating. The microhardness was measured using microhareness tester at the load of 100 gf. Corrosion resistance was evaluated using the potentiodynamic measurement in 3.5% NaG solution. A saturated calomel electrode (SiCE) was used as the reference electrode. Fig.1 shows the typical microstructures of top surface and cross-section for nitrided and unnitrided samples. Aaer plasma nitriding a sandwich structure was formed consisting of surface nitride layer, center chromium layer and interface carbide layer. The thickness of nitride and carbide layers was increased with the increase of processing temperature and time. Hardness reached about 1000Hv after nitriding while 900Hv for unnitrided hard chromium deposit. X-ray diffraction indicated that surface nitrided layer was a mixture of $Cr_2N$ and CrN at low temperature and erN at high temperature (Fig.2). Anodic polarization curves showed that plasma nitriding can greatly improve the corrosion resistance of chromium e1ectrodeposit. After plasma nitriding, the corrosion potential moved to noble direction and passive current density was lower by 1 to 4 orders of magnitude compared with chromium deposit(Fig.3).

• Bulletin of the Korean Chemical Society
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• v.10 no.1
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• pp.8-12
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• 1989

The polycrystalline powder of (BaLa)(MgMo)$O_6$ has been prepared at $1350^{\circ}C$ in a nitrogen flowing atmosphere. The powder X-ray diffraction pattern indicates that (BaLa)(MgMo)$O_6$ has a cubic perovskite structure ($a_0$ = 8.019(3) $\AA)$ with 1:1 ordering or $Mg^{2+}$ and $Mo^{5+}$ in the oxide lattice. The infrared spectrum shows two strong absorption bands with their maxima at 600(${\nu}3$) and 365(${\nu}4$) cm-1, which are attributed to $2T_{1U}$, modes of molybdenum octahedra MoO6 in the crystal lattice. According to the magnetic susceptibility measurement, the compound shows a paramagnetic behavior which follows the Curie-Weiss law below room temperature with the effective magnetic moment 1.60(1){$\mu}B$, which is consistent with that of spin only value ($1.73{\mu}B$) for $Mo^{5+}$ ($4d^1$ electronic configuration). From the thermogravimetric and X-ray diffraction analyses, it has been found that (BaLa)(MgMo)$O_6$ decomposes gradually into $BaMoO_4$, $MoO_3$ and unidentified phases above $900^{\circ}C$ in an ambient atmosphere, absorbing about 0.25 mole $O_2$ per mole of Mo ion, which also supports that oxidation state of $Mo^{5+}$ in the (BaLa)(MgMo)$O_6$.

• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.757-764
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• 2010

We report on the effect of additives on the microstructure and corrosion properties of electrodeposited Cu films. Copper films were fabricated by electrodeposition on various concentrations of gelatin in a copper sulfate electrolyte. The surface morphologies of the Cu films were observed using a scanning electron microscope (SEM), and crystal orientation of the Cu films was analyzed by X-ray diffraction measurement. (220) plane was the dominant orientation when the films were fabricated at ambient temperature, decreasing in dominance with addition of gelatin. On the other hand, (111) plane-Cu films were preferentially grown at $40^{\circ}C$, and were also diminished with adding additives. Corrosion rate measurements using the Tafel extrapolation method based on corrosion potential and current reveal the effect of additives on corrosion behavior. Corrosion behavior was found to be strongly related to the orientation of the films. Consequently, additives like gelatin influence crystal orientation of the films, and if a less dense crystal plane, e.g. (220), is preferentially oriented during electrodeposition, a lower corrosion rate could be produced, since the plane shows a lower current density.

• The Journal of Advanced Prosthodontics
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• v.14 no.5
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• pp.285-293
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• 2022

PURPOSE. This study evaluated the relationship among translucency, crystalline phase, grain size, and fracture toughness of zirconia. MATERIALS AND METHODS. Four commercial zirconia - Prettau^®Anterior^® (PA), Prettau^® (P), InCorisZI (ZI), and InCorisTZI (TZI)- were selected for this study. The bar specimens were prepared to determine fracture toughness by using chevron notched beam method with four-point bending test. The grain size was evaluated by a mean linear intercept method using a scanning electron microscope. X-ray diffraction and Rietveld refinement were performed to evaluate the amount of tetragonal and cubic phases of zirconia. Contrast ratio (CR) was measured to investigate the level of translucency. RESULTS. PA had the lowest fracture toughness among other groups (P < .05). In addition, the mean fracture toughness of P was significantly less than that of ZI, but there was no difference compared with TZI. Regarding grain size measurement, PA had the largest average grain size among the groups. P obtained larger grain size than ZI and TZI (P < .05). However, there was no significant difference between ZI and TZI. Moreover, PA had the lowest CR value compared with the other groups (P < .05). This means PA was the most translucent material in this study. Rietveld refinement found that PA presented the greatest percentage of cubic phase, followed by TZI, ZI, and P, respectively. CONCLUSION. The different approaches are used by manufacturers to fabricate various types of translucent zirconia with different levels of translucency and mechanical properties, which should be concerned for material selection for successful clinical outcome.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.57-77
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• 1998

Heteroepitaxial $Y_2O_3$ films were grown on a Si(111) substrate by ionized cluster beam deposition(ICBD) in ultra high vacuum, and its qualities such as crystllitnity, film stress, and morphological characteristics were investigated using the various measurement methods. The crystallinity was investigated by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Interface crystallinity was also examined by Rutherford backscattering spectroscopy(RBS) channeling, transmission electron microscopy(TEM). The stress of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were investigated by atomic force microscopy (AFM) and x-ray scattering method. Comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface reaction between the yttrium metal and SiO2 layer and by ion beam characteristic such as shallow implantation, so that they influenced the film qualities. The film quality was dominantly depended on the characteristic temperature range. In the temperature range from $500^{\circ}C$ to $600^{\circ}C$, the crystallinity was mainly improved and the surface roughness was drastically decreased. On the other hand, in the temperature range from $600^{\circ}C$ to $700^{\circ}C$, the compressive stress and film density were dominantly increased, and the island size was more decreased. Also the surface morphological shape was transformed from elliptical shape to triangular. The film stress existed dominantly at the interface region due to the defects generation.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.263-267
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• 2008

$(Bi_{1/2}Na_{1/2})TiO_3$-based ceramics have been intensively studied as lead-free piezoelectric ceramics. In this study, the piezoelectric properties and phase transition behaviors of BNT based solid solution $(Bi_{0.5}Na_{0.5})_{1-x}Ca_xTiO_3$ ($X=0.01{\sim}0.25$) were investigated. The morphotropic phase boundary(MPB) zone which BNT is transformed from rhombohedral to cubic structure was appeared by adding $CaTiO_3$ with 0.12 mol by the measurement of permittivity and X-ray diffraction. The behavior which ferroelectric BNT with adding $CaTiO_3$ was changed to antiferroelectric and paraelectric state was confirmed by the measurement ofhysterisis loop and depolarization temperature as a function of temperature. As $CaTiO_3$ concentration was increased, the phase transition temperature was decreased. The piezoelectric properties were highest at 0.01 mol of $CaTiO_3$ concentration. The electromechanical coupling factor($K_t$) and mechanical quality factor($Q_m$) were 42% and 254, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.180-189
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• 2017

Pharmaceutical co-crystals primarily to improve the solubility as well as stability of insoluble drug are to be investigated more intensively for IMDs as US FDA has reclassified co-crystal as a special case of solvates in August this year. In this study, we proposed a mechanism of indomethacin-saccharin co-crystal formation and the creation of transient indomethacin meta-stable form using in-line monitoring tools with the addition rate of anti-solvent as a critical process parameter. Among various instruments, we combined PVM (particle vision measurement) and FBRM (focused beam reflectance measurement) for the in-line monitoring of anti-solvent co-crystallization process. The off-line characterization of resulting powders was carried out employing the PXRD (powder x-ray diffraction) and DSC (differential scanning calorimeter). It was observed that the pathway to the final IMC-SAC co-crystal was significantly dependent upon the anti-solvent addition rate. The process conditions to obtain high quality co-crystal powder effectively were established. Consequently, we concluded that in-line monitoring combing the PVM and FBRM should be useful for the in-line monitoring of pharmaceutical co-crystallization processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.