• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.26-29
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• 2017

Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.

• Journal of electromagnetic engineering and science
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• v.16 no.2
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• pp.134-142
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• 2016

This paper proposes a technique for improving the conventional conical horn antenna for the X-band frequency using metamaterial on a wire medium structure. The main idea of this research is the application of the wire medium metamaterial to the conical horn's aperture for the enhancement of the horn's gain; this is done without changing the antenna's dimensions. The results show that the wire medium structure can increase the gain of a conventional conical horn antenna from approximately 17.7 dB to 20.9 dB (an increase of approximately 3.2 dB). A prototype antenna was fabricated, and its fundamental parameters including its reflection coefficient ($S_{11}$), radiation patterns, and directive gain were measured. The simulated and measured results were very good. The wire medium structure of the proposed antenna improved the radiation pattern, enhanced the directivity, increased the gain, and reduced the side lobe level using a simple integrated wire medium structure.

• Journal of Biosystems Engineering
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• v.32 no.4
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• pp.237-246
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• 2007

In this study, the microwave free-space transmission technique was used to measure the dielectric property of powdered food at microwave frequencies. The sample holder was designed and fabricated to transmit the microwave signals ranging from 1 to 15GHz. From the microwave propagation theory the equation expressing the dielectric property of powdered food was derived and validated by standard dielectrics. The dielectric property of powdered food such as wheat flour, coffee powder and milk powder was measured and analyzed. In the uniform range of bulk density of material, the real parts of permittivity of the food samples increased with the increase of moisture content, bulk density and temperature of the samples. The propagation properties such as attenuation and phase shift increased linearly as the moisture density of the food samples increased. As a measuring frequency of the moisture content, the X-band was recommended.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.480-485
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• 2011

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.91-91
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• 2000

a-C:H 혹은 a-SiC:H 박막은 광전소자 및 태양전지 등의 개발에 있어서 중요한 물질이다. 우리는 a-C:H 및 a-SiC:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착시키고, 박막의 가열에 따른 스핀밀도의 변화를 ESR (electron spin resonance) 측정을 통하여 조사하였다. PECVD 증착가스는 Ch4, SiH4 가스를 사용하였고, 기판은 Corning 1737glass를 사용하였으며, 기판 온도는 300-40$0^{\circ}C$, 증착 압력은 0.1-0.3 Torr, r.f. 전력은 3-36W 사이에서 변화되었다. ESR 측정은 상온 X-band 영역에서 수행되었고, modulation amplitude는 2.5G, modulation frequency는 100kHz 이었다. a-C:H 혹은 a-SiC:H 박막은 진공상태의 reactor, 혹은 공기중의 furnace 안에서 300-50$0^{\circ}C$ 영역에서 3-8시간 정도 가열되거나, 혹은 상온에서 약 50$0^{\circ}C$ 정도까지 단계적으로 가열되었다. 증착된 a-C:H 박막의 초기 구조는 Raman 측정으로부터 polymer-like Carbon으로 추정되었으며, 300-35$0^{\circ}C$ 가열시 초기 1시간 정도 사이에는 스핀밀도가 증가되었으나, 그 후 8시간 정도까지의 가열의 경우에도 대체로 동일하게 나타났다. 또한 상온으로부터 약 50$0^{\circ}C$까지 단계적으로 온도를 높여주며, 각 단계마다 1시간씩 가열했을 때도 30$0^{\circ}C$ 정도까지는 스핀밀도가 증가하다가 더 높은 온도로 가면서 다시 스핀밀도가 감소함을 볼 수 있었다. 이러한 스핀밀도의 초기 증가 및 감소를 일으키는 메카니즘에 대해서 논의해 볼 것이다.

• Archives of Metallurgy and Materials
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• v.65 no.4
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• pp.1287-1291
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• 2020

The U-type ferrite is a kind of hexagonal ferrite, and it is known as a microwave absorber in the X-band. The magnetic and dielectric loss of the U-type ferrite change to the composition and coating layer, etc. In this study, the silicon oxide layer was coated on the substituted U-type ferrites to improve microwave absorption characteristics. The complex permittivity and complex permeability were measured using toroidal specimens that were press-molded and the measured frequency range was set from 2-18 GHz. The improvement of the microwave absorption rate was different according to the type of the substituted U-type ferrites. Only in the substituted U-type ferrites with nickel and zinc, an improvement in the microwave absorption rate due to enhancement of magnetic loss was confirmed. The highest microwave absorption was 99.9% at 9.6 GHz, which was S_Z_0.5U.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Journal of the Korean Chemical Society
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• v.37 no.3
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• pp.302-308
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• 1993

Monolayers of calcium palmitate were deposited on a piezoelectric quartz crystal plate by the Langmuir-Blodgett(LB) technique, and it was found from frequency changes of the quartz crystal deposited LB films. The usual carbonyl absorbance at 1704 cm$^{-1}C$ was replaced by the split band in the 1540~1590 cm$^{-1}C$. The two absorptions at 1580 cm$^{-1}C$ and 1540 cm$^{-1}C$ were assigned to the antisymmetric stretching vibration of the calcium carboxylate group and the hydrated species due to the lowering carbonyl stretching frequency by hydrogen bonding$^1$ respectively. Besides, it was demonstrated by X-ray diffraction analysis. The swelling behaviour of LB films in water phase at 23$^{\circ}C$ was observed from the frequency change of the LB films deposited quartz crystal with time. Calcium palmitate LB films has been found to swell substantially in water without flaking, whereas hexadecanol LB films hardly swelled in water. Amount of swelling of calcium palmitate LB films was equivalent to 47 wt.${\%}$ of the dry LB films, which means that ca. 7 water molecules were incorporated per calcium palmitate amphiphile. Chemical structure of calcium palmitate LB film was estimated as [CH$_3$(CH$_2$)$_{14}$COO]$_2$Ca${\cdot}$XH$_2$O, and the hydration number was 1.

• The Journal of the Acoustical Society of Korea
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• v.23 no.1
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• pp.17-23
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• 2004

The mobile radio channel can be simulated as a complex-valued random process with narrow-band spectrum. This paper describes a real-time implementation of that process using a INS320C6414 digital signal processor and XC2VP30 Virtex FPGA. The simulator presented here is not only a comprehensive model of the flat fading but also frequency selective fading mobile channel conditions. To replicate the statistical characteristics of the multipath fading environment with the minimum computational burden, multi-rate techniques are employed to resolve practical problems such as variable sampling rate. The simulator produces accurate and consistent results due to digital implementation. It is very flexible and simple to program for various field conditions in mobile communications with a graphical user interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.