• Title/Summary/Keyword: X-BAND

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High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology (0.25 ㎛ GaN HEMT 기술을 이용한 우수한 성능의 X-대역 전력 증폭기)

  • Lee, Bok-Hyung;Park, Byung-Jun;Choi, Sun-Youl;Lim, Byeong-Ok;Go, Joo-Seoc;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.425-430
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    • 2019
  • This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

GaN-based Low Noise Amplifier MMIC for X-band Applications (X-대역 응용을 위한 GaN 기반 저잡음 증폭기 MMIC)

  • Byeong-Ok Lim;Joo-Seoc Go;Sung-Chan Kim
    • Journal of IKEEE
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    • v.28 no.1
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    • pp.33-37
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    • 2024
  • In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.

Phase delay of X-band GB-SAR system affected by humidity change (습도변화에 따른 X-band GB-SAR 시스템의 위상지연)

  • Lee, Jae-Hee;Lee, Hoon-Yol;Cho, Seong-Jun;Sung, Nak-Hoon
    • Proceedings of the KSRS Conference
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    • 2009.03a
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    • pp.202-206
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    • 2009
  • 본 논문에서는 X-band GB-SAR 시스템을 이용하여 지상을 모니터링 하였으며, 대기 중의 습도와 거리의 영향을 받는 대기보정 상수를 산출하였다. 시스템에서 X-band 안테나는 중심주파수 9.65 GHz, 밴드 폭 600 MHz이며, 신호의 증폭과 다편파 측정 및 분석을 위해 각각 마이크로파 앰프와 마이크로파 스위치를 이용하였다. Azimuth step과 length는 5 cm와 5 m로 최대 관측 거리는 약 200 m 이다. phase 분석에 쓰인 산란체는 총 5개의 trihedral corner reflector로서, 시스템으로부터의 거리를 각각 다르게 설정하였다. 실험은 3일간 연속적으로 수행되었으며, 실험간 상대습도는 최소 50 %에서 최대 90 %까지로 약 40 %의 변화를 보였다. 고정된 상태의 reflector는 마치 이동한 것과 같은 현상을 보였는데 이는 마이크로화의 전파과정에서 발생하는 거리와 습도에 따른 지연효과라고 판단하였으며, 이를 배제하기 위하여 대기보정식을 산출하였다. 산출과정에서 temporal coherence가 0.98 이하인 reflector의 신호는 제외하였는데 이 경우 시스템 및 reflector의 안정성에 문제가 있다고 판단하였기 때문이다. 산출된 대기보정식은 C-band 안테나를 사용한 실험과 비교하여 보았다.

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Compact L Shape Shorted Pin Patch for Local Oscillator Port of X-, K-, Ka-Band Radar Detector (Radar Detector의 국부 발진단에 적용 가늘한 X, K, Ka 대역 L 모양의 소형 Shorted Pin Patch)

  • Ko, Seung-Tae;Kim, Han-Yong;Lee, Hyun-Taek;Park, Jae-Kyu;Lee, Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.8
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    • pp.854-861
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    • 2007
  • In this paper, a compact L-shaped shorted pin patch to be used at local oscillator port in radar detector is proposed. Shorted pin patch operates as short-open cavity while conventional patch operates as open-open cavity. Shorted pins are L-shaped to obtain quarter wave length and three-quarter wave length resonance for the fundamental(X-band) and $2^{nd}(3^{rd})$(K- and Ka-band) mode resonance frequency, respectively. Thus, the proposed patch can be compact. It is also possible to operate at triple band(X-, K-, Ka-band) with small return loss in radar detector, It is expected that shorted pin patch could improve radar detector sensitivity.

Design of 4-Way Wilkinson Divider with Waveguide to Stripline Transition Used in The Monopulse Radar Front-end (도파관 천이 구조를 갖는 모노펄스 레이더용 4-Way 윌킨슨 분배기 설계)

  • Koh, Young-Mok;Ra, Keuk-Hwan
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.11
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    • pp.69-76
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    • 2010
  • From the present paper we researched about the design of 4-Way Wilkinson divider with waveguide to stripline transition which used to split the LO signal with equi-amplitude and equi-phase in the X-Band Monopulse radar RF front-end. The monopulse radar front end operating in the X-Band is composed of 3 waveguide reception mixers which down convert sum, azimuth and elevation signal to IF and one SSB waveguide mixers which generate X-Band test signal. It is required the 4-way divider with low loss, equi amplitude and equiphase splitting the LO signal to provide the LO signal to each mixer consisting RF frontend. In this paper we designed and fabricated the 4-Way Wilkinson divider with waveguide transition to divide the LO signal into equi-amplitude and equi-phase. The fabricated Wilkinson divider have the insertion loss 6.8dB, VSWR 1.06~1.28, and phase balance maximum 4.5degree for each output ports.

A Study on Electromagnetic Wave Absorbing Sandwich Structures (샌드위치 구조를 갖는 전자기파 흡수체에 관한 연구)

  • Park, Ki-Yeon;Lee, Sang-Eui;Kim, Chun-Gon;Lee, In;Han, Jae-Hung
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.32 no.6
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    • pp.64-71
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    • 2004
  • The object of this study is to design the Radar Absorbing Structures (RAS) having sandwich structures in the X-band ($8.2{\sim}12.4GHz$) frequencies. Glass fabric/epoxy composites containing conductive carbon blacks and carbon fabric/epoxy composites were used for the face sheets. Polyurethane(PU) foams containing multi-walled carbon nanotube (MWNT) were used for the core. Their permittivities in the X-band were measured using the transmission line technique. The reflection loss characteristics for multi-layered sandwich structures were calculated using the theory of transmission and reflection in a multi-layered medium. Three kinds of specimens were fabricated and their reflection losses in the X-band were measured using the free space technique. Experimental results were in good agreements with simulated ones in 10dB absorbing bandwidth.

Verification of current and wave data observed with X-band radar at an offshore wind substantiation farm in the Southwest Sea (서남해 해상풍력실증단지에서 X-Band Radar로 관측한 유동 및 파랑 자료 검증)

  • Seung-Sam Choi;Eun-Pyo Lim;Hyung-Rae Lee;Kwang-Seok Moon;In-Sung Jeon;MINSEUK KIM
    • Journal of Wind Energy
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    • v.15 no.1
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    • pp.21-29
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    • 2024
  • In order to respond to environmental changes and various events in the nearby sea area due to the operation of an offshore wind substantiation farm in the Southwest Sea, X-band radar has been installed and operated on a fixed platform since 2018. The X-band radar's monitoring system produces wave and current data through Rutter's Ocean WaveS wave and current (Sigma S6 WaMoS II). In this study, to verify the reliability of the produced data, the accuracy of current and wave data was evaluated by analyzing the correlation with the results obtained by an acoustic doppler current profiler (ADCP). The selected analysis period was a total of 30 days from November 29 to December 28, 2021, the period during which the ADCP survey was conducted. As a result of comparative verification, the current, wave height and peak wave period (Hs > 0.69 m) data observed from the X-band radar showed a high correlation with the results investigated from ADCP. In the future, current and wave data produced by X-band radar are expected to be used as basic data to analyze environmental changes in sea areas and provide information on various events.

Analysis of Optimum Impedance for X-Band GaN HEMT using Load-Pull (로드-풀을 이용한 X-Band GaN HEMT의 최적 임피던스 분석)

  • Kim, Min-Soo;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.5
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    • pp.621-627
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    • 2011
  • In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

A Design of X-Band Tile Type Active Transmit/Receive Module (X 대역 타일형 능동 송수신 모듈 설계)

  • Ha, Jung-Hyen;Moon, Ju-Young;Lee, Ki-Won;Nam, Byung-Chang;Yun, Sang-Won
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.12
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    • pp.1467-1474
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    • 2010
  • A tile type active T/R(Transmit/Receive) module for X-band active array radar is demonstrated in this paper. Proposed tile type structure based on fuzz button solderless vertical interconnection shows wide band characteristic of about 30 % bandwidth in X-band with insertion loss of below 0.6 dB and input and output VSWR of less than 1.7. Moreover, the mismatching generally appeared in the vertical interconnection which shown wide band characteristic can also be minimized and, therefore, good gain flatness can be achieved.