• Journal of the Korean Chemical Society
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• v.55 no.3
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• pp.502-508
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• 2011

Synthesis of $Nd_{2x}Cd_{2-3x}SiO_4$ ($0.01{\leq}x{\leq}0.21$) [S1-S3: x=0.01, 0.11 and 0.21] solid solutions were prepared by solgel method. Powder x-ray diffraction (XRD) results show monoclinic unit cell with space group P21/m. The average crystallite sizes are found to be 20 to 45 nm. The Scanning Electron Microcopy (SEM) images show morphology of the sample is in globular nature. The energy dispersive analysis of x-rays (EDX) and X-ray mapping results confirmed that all the constituent elements of the composites were present and that were distributed in uniformly. The optical absorption band at ~750 nm was due to $^4I_{9/2}{\rightarrow}^4F_{7/2}+^4S_{3/2}$ transition optically active $Nd^{3+}$ ions. Electron Paramagnetic Resonance (EPR) lineshapes of S1-S3 at 10, 40, 77 and 300 K show a broad unresolved isotropic lineshapes were observed due to rapid spin lattice relaxation of $Nd^{3+}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.79-83
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• 2001

In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.237-241
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• 1998

In this study, PLZT stock solutions around x/65/35 (x=6~11) ferroelectric region were prepared by Sol-Gel method and deposited on ITO-glass by spin-coating method. The thin films were annealed by RTA(rapid thermal annealing). The variations of crystallographic structure of the thin films were observed using XRD and hysteresis curves, dielectric characteristics, and optical transmittances were measured in order to investigate the characteristics of the thin films. The thin films were crystallized at $750^{\circ}C$ for 5 min by RTA. Relative dielectric constant and optical transmittance increased with increasing La content, Ec and Pr were higher for thin films than for bulk materials.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.3
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• pp.576-584
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• 2020

The extruder screw material is mainly SKD11, but the recent development of synthetic resins have increased the occurrence of chemical corrosion and wear. To solve this issue, high chromium cast iron is needed because of its good abrasion resistance and corrosion resistance, but its use is avoided because of its poor machinability. In this study, to improve the machinability of high chrome cast iron, 0, 0.5, 1.0, 1.5% of nickel, which has excellent workability, was added to high chromium cast iron with a composition of Fe-23Cr-2.5C-1.2Si-1.08Mn-0.48Mo-0.3V, and annealed after casting. Subsequently, the effect of nickel on the machinability and corrosion resistance was analyzed using a turning test and coin polarization test, and compared with SKD11. After casting using a high-frequency vacuum induction furnace, the annealing treatment was performed at 750 ℃ for five hours and then reheated at 1100 ℃ for five hours. A turning test after annealing at 750 ℃ showed that the machinability was improved remarkably when the nickel content was over 1.0%. In the potentiodynamic polarization test in a 5% NaCl solution, the corrosion resistance decreased with increasing nickel content in the as-cast and annealing treatment. On the other hand, after reheating, the corrosion resistance was best with a 1.5% nickel content.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.385-392
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• 1994

The morphology variat~on of diamond thin films, grown by microwave plasma chem~cal vapor deposition, was investigated. With increasing substrate temperature from $550^{\circ}C$ to $750^{\circ}C$, the film morphology was changed from {111} to {100}, and then to cauliflower. The nondiamond components in the film increased with increasing temperature. Micro Raman spectrum suggested that the nondiamond components might exist along the boundaries of d~amond particles. The texture of diamond films, analyzed by X-ray diffraction, was varied from random orientation to <100> , and finally to <110> with increasing substrate temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.99-103
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• 2005

Lead scandium tantalate powders were prepared by a molten salt synthesis method using NaCl-KCl as a flux. Variations in phase formation and particle morphology were investigated for the temperature range from $700^{\circ}C\;to\;800^{\circ}C$. $Pb(Sc_{1/2}Ta_{1/2})O_3$, with pure perovskite phase was formed at $750^{\circ}C$ fur 2 hrs and the prepared powder had the cubic-like morphology and the average particle size below $0.5{\mu}m$. The results were discussed with respect to DTA, X-ray diffraction, and microstructural characterization data.

• Journal of Ceramic Processing Research
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• v.22 no.2
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• pp.214-220
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• 2021

Heterolayered potassium tantalate niobate(KTN(70/30)/KTN(30/70)) thin films on Pt/Ti/SiO2/Si substrates prepared by the sol-gel process and spin coating method. When sintered at 700 ℃ or higher, the X-ray diffraction intensities of the perovskite phase were greatly increased, and it was observed as the main phase of the KTN heterolayered thin film. As the sintering temperature increased from 650 ℃ to 800 ℃, the average grain size increased from 146nm to 380 nm, and the average thickness of the KTN films coated six times was about 394-441 nm. Dielectric constant and dielectric loss of the KTN film sintered at 750 ℃ and room temperature showed good properties of about 2850 and 0.573, respectively, and all films exhibited the typical dielectric relaxation characteristics. The phase transition temperature of KTN thin film was around 12-13 ℃. Remanent polarization and the coercive field of KTN film sintered at 750 ℃ showed excellent properties of 23.98 μC/cm2 and 35.41 kV/cm, respectively. Adiabatic temperature changes (ΔT) and electrocaloric strength of the KTN films sintered at 750 ℃ at 60 ℃ were 2.67℃ and 0.012 KcmkV-1, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Journal of the Korean Statistical Society
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• v.24 no.1
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• pp.149-160
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• 1995

We consider the problem of optimal adaptive estiamtion of the euclidean parameter vector $\theta$ of the univariate non-linerar autogressive time series model ${X_t}$ which is defined by the following system of stochastic difference equations ; $X_t = \sum^p_{i=1} \theta_i \cdot T_i(X_{t-1})+e_t, t=1, \cdots, n$, where $\theta$ is the unknown parameter vector which descrives the deterministic dynamics of the stochastic process ${X_t}$ and ${e_t}$ is the sequence of white noises with unknown density $f(\cdot)$. Under some general growth conditions on $T_i(\cdot)$ which guarantee ergodicity of the process, we construct a sequence of adaptive estimatros which is locally asymptotic minimax (LAM) efficient and also attains the least possible covariance matrix among all regular estimators for arbitrary symmetric density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.749-751
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• 2002

$(Pb_{1-x}Sr_x)TiO_3$ $(0.6{\leq}x{\leq}0.8)$ thin films were prepared by the MOD method for tunable microwave device application and their characteristics were investigated as a function of Sr content(x) and applied field. Thin films showed a homogeneous microstructure and the tetragonality(c/a) was slightly decreased with increasing Sr content. With increasing Sr content, Curie temperature of the thin films showed a decreasing tendency. For the PST thin films, the dielectric constant at room temperature, Tc, and $tan{\delta}$ were 750~1900, $-70^{\circ}{\sim}-30^{\circ}C$ and 0.025~0.04, respectively.