• Korean Journal of Agricultural and Forest Meteorology
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• v.15 no.4
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• pp.291-297
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• 2013

Automated weather stations were installed at 9 locations with, three different elevations, (i.e., 50m, 100m, and 300m a.s.l.) with different slope and aspect in a small watershed ($50km^2$ area). Air temperature at 1500 LST and solar radiation accumulated for 1100-1500 LST were collected from January to December 2012. Topography of the study area was defined by a $30{\times}30$ m digital elevation model (DEM) grid. Accumulated solar irradiance was calculated for each location with the spatially averaged slope and aspect of surrounding circles with 5, 10, 15, 20, 25, and 30 grid cell radii, respectively. The 1500 LST air temperature from clear sky conditions with zero cloud amount was regressed to the 1100-1500 LST solar irradiance at 9 locations. We found the highest coefficient of determination ($r^2$ = 0.544) at 25 grid cell radius and the temperature variation in this study was explained by Y = 0.8309X + 0.0438, where Y is 1500 LST temperature (in $^{\circ}C$) and X is 1100-1500 LST accumulated solar irradiance (in $MJ/m^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.85-88
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• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• Journal of Microbiology and Biotechnology
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• v.34 no.4
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• pp.846-853
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• 2024

Adzuki bean (Vigna angularis), which provides plant-based proteins and functional substances, requires a long soaking time during processing, which limits its usefulness to industries and consumers. To improve this, ultrasonic treatment using high pressure and shear force was judged to be an appropriate pretreatment method. This study aimed to determine the optimal conditions of ultrasound treatment for the improved hydration of adzuki beans using the response surface methodology (RSM). Independent variables chosen to regulate the hydration process of the adzuki beans were the soaking time (2-14 h, X₁), treatment intensity (150-750 W, X₂), and treatment time (1-10 min, X₃). Dependent variables chosen to assess the differences in the beans post-immersion were moisture content, water activity, and hardness. The optimal conditions for treatment deduced through RSM were a soaking time of 12.9 h, treatment intensity of 600 W, and treatment time of 8.65 min. In this optimal condition, the values predicted for the dependent variables were a moisture content of 58.32%, water activity of 0.9979 a_w, and hardness of 14.63 N. Upon experimentation, the results obtained were a moisture content of 58.28 ± 0.56%, water activity of 0.9885 ± 0.0040 a_w, and hardness of 13.01 ± 2.82 g, confirming results similar to the predicted values. Proper ultrasound treatment caused cracks in the hilum, which greatly affects the water absorption of adzuki beans, accelerating the rate of hydration. These results are expected to help determine economically efficient processing conditions for specific purposes, in addition to solving industrial problems associated with the low hydration rate of adzuki beans.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.83-90
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• 1990

The semiconducting $(Pb_1\;_xSn_x)_1$ $_yTe_y$, one of the low - temperature thermoelectric materials, has been prepared and its chemical composition and nonstoichiometry has been analyzed. The content of Pb in the specimens was determined by the complexometric back - titration method with EDTA and Pb(II) standard solutions. Te - content was analyzed with the redox titration method. The electrical conductivity and the thermoelectric power have also been measured by the DC 4 - probe and the heat-pulse technique, respectively. All of the specimens showed a nonstoichiometric behavior in their chemical compositions (Te excess), thus gave rise to a p - type semiconducting property, and the nonstoichoimetry became bigger as the Sn - content increased. The thermoelectric power vs. temperature results have been analyzed upon the basis of the Fermi level vs. temperature profiles in the saturation regime. The specimen of x=0.1 evolved a transition from p - to n - type property at about 670K, which has been explained by the fact that the mobility of electrons is bigger than that of holes in the temperature range of the intrinsic regime.

• Membrane Journal
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• v.22 no.2
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• pp.113-119
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• 2012

$YBaCo_2O_{5+{\delta}}$ oxide was synthesized by solid state reaction and a typical dense membrane has been prepared using as-prepared powder by unilateral pressing and sintering at $1,180^{\circ}C$. The $YBaCo_2O_{5+{\delta}}$ membraneswas analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD analysis showed the double layered perovskite structure was observed over $1,150^{\circ}C$ without impurities. Oxygen permeation was measured in the temperature range from 750 to $950^{\circ}C$ according to oxygen partial pressure difference between feed and permeation side. The oxygen permeation flux increased with increasing temperature and oxygen partial pressure and the maximum oxygen flux of $YBaCo_2O_{5+{\delta}}$ membrane with 1.0 mm thickness was about 0.15 mL/$cm^2{\cdot}min$ at $950^{\circ}C$ and $PO_2$ = 0.42 atm. The activation energy for oxygen permeation decreased with decreasing oxygen partial pressure to be 76.0 kJ/mol at the condition of $PO_2$ = 0.21 atm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.69-74
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• 2007

[ $0.6Pb(Sc_{1/2}Ta_{1/2})O_3-0.4PbTiO_3$ ] (hereafter PSTT) ceramics were prepared by the molten salt synthesis (MSS) method using KCI as a flux. Formation of perovskite phase was investigated by a differential thermal analysis (DTA) and X-ray diffraction (XRD) analysis in the temperature range from $600^{\circ}C$ to $850^{\circ}C$. A 92% perovskite phase was synthesized at $750^{\circ}C$ for 2 hrs using the MSS method, while 82% perovskite phase was synthesized at $850^{\circ}C$ for 4ks using the calcining of mixed oxide (CMO) method. This result could be due to the improvement in reactivity of $Sc_2O_3$ by melting of KCI. The MSS specimen sintered at $1,100^{\circ}C$ for 4hrs showed a dielectric constant of 11,200, a remnant polarization of $13.5{\mu}C/cm^2$ and a coercive field of 10.198 kV/cm, which was discussed in view of the microstructure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.56-62
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• 2003

Epitaxial $Bi_4Ti_3O_{12}$ films on $SrTiO_3$(100), L$aA1O_3$(100) and MgO(100) were prepared by sol-gel process using metal naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min In air and annealed at $750^{\circ}C$ for 30 min in air. Crystallinity and in-plane alignment of the film were investigated by X-ray diffraction $\theta$-2$\theta$ scan and P scanning. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. The film prepared on MgO(100) showed the most poor crystallinity and in-plane alignment, compared to those on the other substrates. While the films on $LaA1O_3$(100) and $SrTiO_3$(100) having high crystallinity and in-plane alignment showed the form of columnar grain growth, the film on MgO(100) which had poor crystallinity showed the form of acicula grain growth.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.443-450
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• 1993

Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.

• Resources Recycling
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• v.29 no.5
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• pp.64-72
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• 2020

When the multi-stage combustion process is applied to the cement kiln to reduce nitrogen oxide emissions in the cement industry, oxidation/reduction section that can increase combustion efficiency by reducing NO_x to NO and completely burning unburned materials is essential In this study, when applied the oxidation/reduction system of the cement kiln preheater and calciner, the optimal oxidation/reduction calcination crisis that can secure the quality stability of the final product, cement clinker, was to be observed macroscopically, and the mass change of raw materials according to the burning conditions, decarbonation rate, and calcination rate were investigated. The results showed that the thermal decomposition of raw materials tends to be promoted in the oxidation condition rather than in the reduction condition, and that the thermal decomposition of limestone, which has a relatively high CaO content, is carried out later than that of cement raw meal, which is thought to be caused by the CO₂ fractionation in the kiln. The thermal decomposition properties of raw materials according to oxidation/reducing burning condition showed a relatively large difference in temperature range lower than normal limestone themal decomposition temperature, which is thought to be expected to improve the thermal efficiency of raw materials according to the formation of oxidation condition in the section 750℃ of burning temperature. However, for this study, lab scale. Because there is a difference from the field process as a scale study, it is deemed necessary to verify the actual test results of the pilot scale.