• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1281-1287
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• 2018

In this study, $Al_xGa_{1-x}N$ films were grown on (0001) sapphire substrates by using metal-organic chemical vapor deposition (MOCVD). The crystallinity of the grown films was examined with X-ray diffraction (XRD) patterns. The surfaces and the chemical properties of the $Al_xGa_{1-x}N$ films were investigated using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The optical properties of the $Al_xGa_{1-x}N$ film were studied in a wide photon energy range between 2.0 ~ 8.7 eV by using spectroscopic ellipsometry (SE) at room temperature. The data obtained by using SE were analyzed to find the critical points of the pseudodielectric function spectra, $<{\varepsilon}(E)>=<{\varepsilon}_1(E)>+i<{\varepsilon}_2(E)>$. In addition, the second derivative spectra, $d^2<{\varepsilon}(E)>/dE^2$, of the pseudodielectric function for the $Al_xGa_{1-x}N$ films were numerically calculated to determine the critical points (CPs), such as the $E_0$, $E_1$, and $E_2$ structure. For the four samples (x = 0.18, 0.21, 0.25, 0.29) between a composition of x = 0.18 and x = 0.29, changes in the critical points (blue-shifts) with increasing Al composition at 300 K for the $Al_xGa_{1-x}N$ film were observed via ellipsometric measurements for the first time.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.379-387
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• 1996

본 연구에서는 GaAs 소자제작 및 epi-layer 성장 공정에 있어 이용되어지는 HCI, H3PO4, 탈이온수(de-ionized water:DIW)를 통한 습식제정후 공기중 노출에 따른 오염을 최소화하여 표면상태 변화를 진성적(intrinsic)으로 관찰하고자 모든 세정처리를 아르곤 가스(argon gas)로 분위기가 유지되는 glove box에서 수행하였으며, 표면조성 및 결합상태 변화에 대한 관찰은 X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 이루어졌다. 고진공하에서 GaAs를 벽개하여 관찰함으로써 Ga이 대기중 산소이온과 우선적으로 결합함을 알 수 있었고, 이런 GaAs 표면의 반응성에 대한 고찰을 바탕으로 습식세정에 따른 화학반응 기구가 제시 되어졌다. HCI 및 H3PO4/DIW/HCI처리후 CI-이온의 Ga 이온과의 반응에 의한 Ga-CI결합의 형성과 As 산화물의 높은 용해도에 따른 As 산화물의 완전한 제거 및 식각전 초기(bare)GaAsvyaus에 존재하는 원소(elemental)As 상태의 식각후 잔류가 관찰되어졌다. 또 HCI, H3PO4/DIW/HCI 처리하고 DIW로 세척후 표면상태 변화를 관찰한 결과, DIW처리에 의해 elemental As 상태가 증가함을 알 수 있었다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.5 s.248
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• pp.397-404
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• 2006

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.72-72
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• 2010

탄소나노튜브(carbon nanotubes : CNTs)는 뛰어난 전기적, 물리적인 특성을 가지고 있기 때문에 다양한 분야에서 이를 활용하려는 노력들이 활발히 이루어지고 있다. CNTs의 전기적인 특성은 직경에 의해 결정되므로, 직경을 균일하게 제어하는 일이 CNTs를 기반으로 한 전자소자 응용에 가장 중요한 사항이라 할 수 있다. 일반적으로 화학기상증착법(chemical vapor deposition, CVD)으로 합성된 CNTs의 직경은 촉매의 크기에 의존하기 때문에, 촉매의 크기를 제어하기 위한 다양한 연구들이 활발히 진행되고 있다[1-3]. 하지만 CNTs의 성장온도 근처에서 촉매 입자는 표면 확산(surface diffusion)에 의해 응집(agglomeration)되기 때문에 작고 균일한 크기의 촉매를 얻기 어렵다. 본 연구에서는 Si(001) 기판 위에 지지층(supporting layer)인 Al의 두께를 변화시켜 증착하고, 열적산화과정을 통해 $Al_2O_3$ 층을 형성한 후 Fe을 증착하여 CNTs를 합성하였다. $Al_2O_3$ 지지층과 Fe 촉매입자의 구조와 화학적 상태를 원자힘현미경 (atomic force microscopy, AFM), 주사전자현미경 (scanning electron microscopy, SEM), 투과전자현미경 (transmission electron microscopy, TEM), X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 분석하였고, 성장된 CNTs는 SEM, TEM, 라만 분광법 (Raman spectroscopy)을 통해 분석하였다. 그 결과, $Al_2O_3$ 층은 두께에 따라 각기 다른 표면 거칠기(RMS roughness)와 결정립(grain)의 크기를 갖게 되며, 이러한 표면구조가 Fe 촉매입자의 표면확산에 의한 응집에 관여하여 CNTs의 직경에 영향을 미치는 것을 확인하였다. 또한 $Al_2O_3$ 지지층의 두께가 15 nm인 경우, Fe의 응집현상이 억제되어 좁은 직경분포를 지닌 고순도 단일벽 탄소나노튜브(Single-walled CNTs)가 성장되는 것을 확인하였다.

• Polymer(Korea)
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• v.39 no.2
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• pp.219-224
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• 2015

In this work, the effect of fiber array direction including $0^{\circ}$, $0^{\circ}/90^{\circ}$, $0^{\circ}/45^{\circ}/-45^{\circ}$ was investigated for mechanical properties of basalt fiber-reinforced composites. Mechanical properties of the composites were studied using interlaminar shear strength (ILSS) and critical stress intensity factor ($K_{IC}$) measurements. The cross-section morphologies of basalt fiber-reinforced epoxy composites were observed by scanning electron microscope (SEM). Also, the surface properties of basalt fibers were determined by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). From the results, it was observed that acid treated basalt fiber-reinforced composites showed significantly higher mechanical interfacial properties than those of untreated basalt fiber-reinforced composites. These results indicated that the hydroxyl functional groups of basalt fibers lead to the improvement of the mechanical interfacial properties of basalt fibers/epoxy composites in the all array direction.

• Polymer(Korea)
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• v.36 no.4
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• pp.461-469
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• 2012

The surface modification and characterization of Ar-plasma treated polypropylene (PP) blend are investigated using x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and contact angle measurement. An increase in Ar-plasma treatment time leads to an increase in wettability, oxygen containing polar functional groups, the amount of talc, and surface roughness on the PP blend surface. A careful observation using SEM indicates that there exists a skin layer consisting of only PP component. The difference in viscosity between PP and rubber particles facilities the formation of skin layer. However, it is found that an increase in Ar-plasma treatment time helps to decrease the thickness of skin layer. Additional methodologies for the elimination of skin layer during injection molding are also discussed. The surface modification and morphological alteration induced by Ar-plasma treatment provides a hydrophilic state, followed by the improvement in wettability, on the PP blend surface.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.35-42
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• 1992

Thermal behavior of residue and damaged layer formed by reactive ion etching (RIE) in $CHF_3/C_2F_6$ were investigated using X-ray photoelectron spectroscopy(XPS) and secondary ion mass spec-trometry(SIMS) techniques. Decomposition of polymer residue film begins at $200^{\circ}C$ and above $400^{\circ}C$ carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal treatment above $800^{\circ}C$ under nitrogen atmosphere and out-diffusion of carbon and fluorine of damaged layer is observed.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.214-220
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• 1991

The effects of $SiO_2$ reactive ion etching (RIE) in $CHF_{3/}C_2F_6$ on the surface properties of the underlying Si substrate were studied by X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) techniques. Angle-resolved XPS analysis was carried out as non-destructive depth profile one for investigating the chemical bonding states of silicion, carbon, oxygen and fluorine. The residue layer consists of C-F polymer. O-F bond was found on the top of the polymer layer and Si-O, Si-C and Si-F bonds were detected between Si substrate and polymer film. A 60nm thick damaged layer of silicon surface mainly contains carbon and fluorine.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.61.2-61.2
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• 2013

우리나라 최초의 거대과학 장치인 포항방사광가속기(PLS)는 지난 16년(1994~2010) 동안 국내외 이용자에게 제3세대 방사광을 제공했다. 최초 2기의 빔라인을 시작으로 꾸준하게 빔라인 증설과 성능개선을 위해 노력해 왔다. 지속해서 늘어나는 방사광 이용자 수와 더욱더 좋은 수준의 방사광 요구에 부응하기 위하여 2009년부터 3년 동안 가속장치의 성능향상사업(PLS-II)을 마쳤다. PLS-II는 PLS 대비에너지와 빔전류는 3 GeV, 400 mA로 늘리는 반면 빔의 크기는 크게 줄이고 빔안정성을 개선한 고품질 X-선 방사광 발생장치이다. 2012년부터 16기의 삽입장치 빔라인을 포함한 30기의 빔라인을 가동하여 이용자 지원을 하고 있으며 초전도케비티 설치를 포함한 목표 성능의 확보에도 많은 노력을 기울이고 있다. 현재는 6 nm-rad의 빔에 미턴스, 3-GeV전자빔, 약 0.5 ${\mu}m-rms$ 빔안정도를 가진 200 mA Top-up 운전으로 빔을 제공 하고 있으며 2014년 말에는 저장전류 400 mA급의 PLS-II 목표치로 운전할 계획이다. 본 발표에서는 포항가속기의 25년 역사를 돌아보고 가속장치의 건설에 얽힌 이야기, 중요장치 그리고 운전과 빔제공에 관한 내용, 특히 핵심 운전가치인 빔안정성을 개선하고 유지하기 위한 노력을 빔운전 측면과 진공을 포함한 엔지지어링 측면에서 언급하고자 한다. PLS 건설부터 현재 운용 중인 30기의 빔라인에서 수행된 연구 성과의 통계에 대하여 훑어보고 X-선 산란과 광전자분광을 이용한 구조, 성분 및 물성분석, 그리고 이미징 등의 분야에서 나온 탁월한 연구 결과를 살펴본다. 앞으로 건설될 신규 빔라인과 빔라인의 향후 운영 방향을 소개한다. 마지막으로 지금 포항가속기연구소에서 건설 중인 제4세대 가속기(X-선 자유전자레이저) 프로젝트의 개요 및 건설 현황과 함께 앞으로 기대되는 새로운 과학에 대하여도 소개하고자 한다.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.11-16
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• 1998

In this study, we prepared a Na$_2$Se/NH$_4$OH solution to investigate a passivation effect of Se on GaAs surface. X-ray photoelectron spectroscopy and photoluminescence (PL) were used to analyse the surface chemical bonding states and the optical properties of GaAs after Se-treatment and a successive exposure to air, respcetively. It was observed that all of the observed selenium bound with arsenic to form As-Se bond and showed only one oxidation state as -2. PL intensity of Se-passivated surface was larger than that of HCI-cleaned surface, and this means that the effective reduction of surface state density of GaAs was successfully obtained by this treatment. However the existence of partial oxide on the Se-passivated surface was seemed to be a major cause to the degradation of Se passivation effcet. PL intensity of Se-passivated surface also decreased according to air-exposure and converged to that of HCI-cleaned surface.