• Title/Summary/Keyword: Wurtzite structure

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Synthesis, Structural Characterization, and Catalytic Activity of Flower Like ZnO Nanostructures

  • Ramachandran, K.;Kumar, G. Gnana;Kim, Ae Rhan;Yoo, Dong Jin
    • Bulletin of the Korean Chemical Society
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    • v.35 no.4
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    • pp.1091-1097
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    • 2014
  • Tageteserecta flower like zinc oxide nanostructures composed of hexagonal nanorods were synthesized via sonochemical method at room temperature. The synthesized nanomaterials exhibited wurtzite hexagonal phase structure with the single crystalline nature. The diameter of the individual nanorods that constitute the flower shaped zinc oxide structures is in the range of 120-160 nm. The sonication time effectively determined the morphological properties of the prepared materials. The catalytic activity of prepared zinc oxide nanostructures towards N-formylation reactions were evaluated without any surface modification and the nanostructures exhibited good reaction yield with the prompt recyclability behavior.

Epitaxial Structure Optimization for High Brightness InGaN Light Emitting Diodes by Using a Self-consistent Finite Element Method

  • Kim, Kyung-Soo;Yi, Jong Chang
    • Journal of the Optical Society of Korea
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    • v.16 no.3
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    • pp.292-298
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    • 2012
  • The epitaxial layer structures for blue InGaN light emitting diodes have been optimized for high brightness applications with the output power levels exceeding 1000 $W/cm^2$ by using a self-consistent finite element method. The light-current-voltage relationship has been directly estimated from the multiband Hamiltonian for wurtzite crystals. To analyze the efficiency droop at high injection levels, the major nonradiative recombination processes and carrier spillover have also been taken into account. The wall-plug efficiency at high injection levels up to several thousand $A/cm^2$ has been successfully evaluated for various epilayer structures facilitating optimization of the epitaxial structures for desired output power levels.

Influence of Plasma Discharge Power on the Electrical and Optical Properties of Aluminum Doped Zinc Oxide Thin Films

  • Moon, Yeon-Keon;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.16 no.6
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    • pp.346-350
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    • 2006
  • Al-doped ZnO (AZO) thin films were grown on type of glass#1737 substrates by DC magnetron sputtering. The structural, electrical and optical properties of the films were investigated as a function of various plasma discharge power. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity was $6.0{\times}10^{-4}{\Omega}cm$ with the carrier concentration of $2.69{\times}10^{20}cm^{-3}$ and Hall mobility of 20.43 $cm^2/Vs$. The average transmittance in the visible range was above 90%.

Fabrication of ZnO Nanowires by Direct Melt Oxidation of Al-Zn Alloy (Al-Zn 합금의 직접용융산화법을 이용한 ZnO 나노와이어의 제작)

  • Lee, Geun-Hyoung;Kim, Il-Soo;Shin, Byoung-Chul;Lee, Won-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.11
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    • pp.995-999
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    • 2008
  • ZnO nanowires with tetrapod shape were formed on the surface of the sample by direct melt oxidation of Al-Zn alloy at $1000^{\circ}C$ in air. X-ray diffraction (XRD) pattern revealed that the ZnO nanowires had wurtzite structure of hexagonal phase. Any other element except Zn and O was not detected in energy dispersive X-ray spectrum. The c- and a-axis lattice constants estimated from the XRD pattern were 0.520 and 0.325 nm, respectively. These are in well accordance with those of bulk ZnO single crystal, indicating high quality crystallinity. The green light emission at a wavelength of 510 nm was observed from the nanowires at room temperature, which was ascribed to high density of oxygen vacancies in nanowires.

Properties of ZnO:Ga Thin Films Deposited by RF Magnetron Sputtering with Ar Gas Flows (RF 마그네트론 스퍼터링법으로 제조한 GZO 박막의 Ar 유량에 따른 특성)

  • Kim, Deok Kyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.450-453
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    • 2020
  • In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

Synthesis and Cathodoluminescence of Tetrapod and Multipod-shaped ZnO Nanostructures by Oxidation of Zn in Air Atmosphere (공기 중 대기압 분위기에서 Zn의 산화에 의해 생성된 Tetrapod와 Multipod 형태의 나노구조와 음극선 발광 특성)

  • Lee, Geun-Hyoung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.256-260
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    • 2011
  • ZnO nanostructures with tetrapod, needle and multipod shapes were synthesized without catalysts through a simple thermal oxidation of metallic Zn powder in alumina crucible under air atmosphere. X-ray diffraction data revealed that the ZnO nanostructures had wurtzite structure of hexagonal phase. Energy dispersive X-ray (EDX) spectra showed that the ZnO was of high purity. After the oxidation of Zn powder, white colored product was mainly observed and yellow colored product was observed only a very little on the surface of the oxidized source materials. The white product consisted of tetrapods, while yellow product was composed of needles and multipods. Cathodoluminescece spectra showed that the crystalline quality of tetrapods was better that those of needles and multipods.

Fabrication and characterization of ternary compound ZnCdS nanowires

  • Lee, Dong-Jin;Son, Moon-A;Kang, Tae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.57-57
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    • 2010
  • Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.

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Substrate Temperature Effects on Structural and Optical Properties of RF Sputtered CdS Thin Films

  • Hwang, Dong-Hyeon;Choe, Jeong-Gyu;Son, Yeong-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.218.2-218.2
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    • 2013
  • In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.

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Gallium nitride nanoparticle synthesis using nonthermal plasma with gallium vapor

  • You, K.H.;Kim, J.H.;You, S.J.;Lee, H.C.;Ruh, H.;Seong, D.J.
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1553-1557
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    • 2018
  • Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.

Optical and Magnetic Properties of Copper Doped Zinc Oxide Nanofilms

  • Zhao, Shifeng;Bai, Yulong;Chen, Jieyu;Bai, Alima;Gao, Wei
    • Journal of Magnetics
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    • v.19 no.1
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    • pp.68-71
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    • 2014
  • Copper doped Zinc Oxide nanofilms were prepared using a simple and low cost wet chemical method. The microstructures, phase structure, Raman shift and optical absorption spectrum as well as magnetization were investigated for the nanofilms. Room temperature ferromagnetism has been observed for the nanofilms. Structural analyses indicated that the films possess wurtzite structure and there are no segregated clusters of impurity phase appreciating. The results show that the ferromagnetism in Copper doped Zinc Oxide nanofilms is driven either by a carrier or defect-mediated mechanism. The present work provides an evidence for the origin of ferromagnetism on Copper doped Zinc Oxide nanofilms.