• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.576-576
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• 2012

High quality single crystalline strain controlled wurtzite ZnO nanowire arrays have been grown on conductive silicon and ITO substrates by a facile hydrothermal method. The diameter of the nanowires was found to be less than 90 nm approximately for both of the two kinds of substrates. The quality of the ZnO nanowire arrays is dramatically improved by hanging the substrate above from the bottom of the Teflon lined autoclave. The structural investigation indicates the preferential orientation of the nanowire along c-axis. In order to make the convincible comparison, the photoluminescence property of the nanowire arrays grown under different conditions are measured, the sharp near band edge emission from PL, low turn-on voltage ($1.9V/{\mu}m$) from field emission measurement and Fowler-Nordheim plot was investigated from ZnO nanowire arrays grown by proposed substrate hanging method.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.4
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• pp.301-305
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• 2012

In this work the mechanical behaviors of GaN nanowires are analyzed during tension, compression, and unloading deformations. The thermal conductivity of the nanowires at each deformed state is evaluated using an equilibrium Green-Kubo approach. Under tensile loading, the [0001]-oriented nanowires with hexagonal cross-sections undergo a phase transformation from wurtzite to a tetragonal structure. The phase transformation is not observed under compressive loading. The thermal conductivity decreases on going from compressive strains to tensile strains. The strain dependence of the thermal conductivity results from the relaxation time of phonon. A reverse transformation from the tetragonal structure to the wurtzite structure is observed during unloading. The thermal conductivities in the intermediate states are lower than the conductivity in the wurtzite structure at same strain. Such differences in the thermal conductivity between different atomic structures are mainly due to changes in the group velocity of phonon.

• Advances in nano research
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• v.2 no.3
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.315.2-315.2
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• 2014

Pt-functionalized ZnS nanowires were synthesized on Au-deposited c-plane sapphire substrates by thermal evaporation of ZnS powders followed by wet Pt coating and annealing. The $NO_2$ gas sensing properties of multiple-networked Pt-functionalized ZnS nanowire sensors were examined. Scanning electron microscopy showed the nanowires with diameters of 20-80 nm. Transmission electron microscopy and X-ray diffraction showed that the nanowires were wurtzite-structured ZnS single crystals. The Pt-functionalized ZnS nanowire sensors showed enhanced sensing performance to $NO_2$ gas at $150^{\circ}C$ compared to pristine ZnS nanowire sensors. Pristine and Pt-functionalized ZnS nanowire sensors showed responses of 140-211% and 207-488%, respectively, to 1-5 ppm $NO_2$, which are better than or comparable to those of many oxide semiconductor sensors. In addition, the underlying mechanism of the enhancement of the sensing properties of ZnS nanowires by Pt functionalization is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.931-934
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• 2001

GaN nanowires has much interest as one-dimensional materials for blue light LED. GaN-based materials have been the subject of intensive research for blue light emission and high temperature/high power electronic devices. In this letter, the synthesis of GaN nanowires by the reaction of mixture of GaN nanowires by the reaction of mixture of Ga meta and GaN powder with NH$_3$ using thermal chemical vapor deposition is reported. X-ray diffraction, energy dispersive x-ray spectrometer, scanning electron microscopy, and transmission electron microscopy indicate that those GaN nanowires with hexagonal wurtzite structure were about 60nm in diameter and up to several hundreds of micrometers in length.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.362.1-362.1
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• 2016

InAs nanowires were synthesized by a vapor-liquid-solid method with InAs powder. The composition and crystalline structure of nanowires were confirmed by energy-dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM), respectively. The thermal conduction of nanowires was investigated by the optical method using Raman spectroscopy: i.e., the local temperature on nanowire was determined by laser heating. As temperature increased, the Raman peaks are shifted to low frequency and broadened. The temperature dependent Raman scattering experiments was realized on InAs nanowires with different percentages of zinc-blende and wurtzite structure. The temperature dependence on the nanowire structure has been successfully obtained: the phonon scattering was more increased in InAs heretostructure nanowires, compared to the InAs nanowires with homostructure. The result strongly suggests that the thermal conduction can be effectively controlled by ordered interface without any decrease in electrical conduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.291-291
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• 2011

1차원 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si(111) 기판 위에 Ga-droplet을 촉매로 사용을 하여 molecular beam epitaxy로 성장을 하였다. 성장온도는 600$^{\circ}C$로 고정을 하였고 growth rate은 GaAs(100) substrate에서 2.5 A/s로 Ga의 양을 고정하고 V/III ratio를 1부터 8까지 변화를 시켰다. As의 양에 따라서 생성되는 NWs의 개수가 증가하고 growth rate이 빨라지는 것을 확인할 수 있었다. Transmission Electron Microscopy 분석 결과 낮은 V/III ratio에서는 zincblende, wurtzite 그리고 stacking faults 가 혼재 되어 있는 것을 확인 할 수 있었다. 이러한 결함은 소자를 만드는데 한계가 있기 때문에 pure zincblende나 pure wurtzite를 가져야 하는데 V/III ratio : 8 에서 pure zincblende구조가 되었다. Gibbs-Thomson effect에 따르면 구조적 변화는 Ga droplet과 NWs의 접면에서 크기가 중요한 역할을 한다[1]. 연구 결과 V/III ratio : 8일 때 Ga droplet의 크기가 zincblende성장에 알맞다는 것을 예상할 수 있었다. laser confocal photoluminescence 결과 상온에서 1.43 eV의 bandgap을 가지는 bulk구조와는 다른 와 1.49eV의 bandgap을 가지는 것을 확인하였다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.101-105
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• 2010

We fabricated FEDs(Filed emission devices) based on ZnO nanowires. The ZnO nanowires were synthesized on Au thin films by hydrothermal method at the temperature of 90[$^{\circ}C$] on hot plate. In order to form tips of the ZnO nanowire, SDS(Sodium Dodecyl Sulfate) was mixed in O.05-0.3[wt%] solution as capping material. After 2 hour growth, we obtained nanowires of chain form The high-purity nanowires showed sharp tip geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1[V/${\mu}m$] at a current density of 0.1[${\mu}A/cm^2$].

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.358-363
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• 2015

We present an excellent detection for nitrogen monoxide (NO) gas using polycrystalline ZnO wire-like films synthesized via a simple method combined with sputtering of Zn metallic films and subsequent thermal oxidation of the sputtered Zn nanowire films in dry air. Structural and morphological characterization revealed that it would be possible to synthesize polycrystalline hexagonal wurtzite ZnO films of a wire-like nanostructure with widths of 100-150 nm and lengths of several microns by controlling the sputtering conditions. It was found from the gas sensing measurements that the ZnO wire-like thin film gas sensor showed a significantly high response, with a maximum value of 29.2 for 2 ppm NO at $200^{\circ}C$, as well as a reversible fast response to NO with a very low detection limit of 50 ppb. In addition, the ZnO wire-like thin film gas sensor also displayed an NO-selective sensing response for NO, $O_2$, $H_2$, $NH_3$, and CO gases. Our results illustrate that polycrystalline ZnO wire-like thin films are potential sensing materials for the fabrication of NO-sensitive high-performance gas sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.429-429
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• 2008

The structural stability and the elastic modulus of hexagonal ZnO nanowires and nanotubes are investigated using atomistic simulations based on the shell model. The ZnO nanowire with (10-10) facets is energetically more stable than that with (11-20). Our calculations indicate that the structural change of ZnO nanowires with (10-10) facets is sensitive to the diameter. With decreasing the diameter of ZnO nanowires, the unit-cell length is increased while the bond-length is reduced due to the change of surface atoms. Unlike the conventional layered nanotubes, the energetic stability of single crystalline ZnO nanotubes is related to the wall thickness. The potential energy of ZnO nanotubes with fixed outer and inner diameters decreases with increasing wall thickness while the nanotubes with same wall thickness are independent of the outer and inner diameters. The transformation of single crystalline ZnO nanotubes with double layer from wurtzite phase to graphitic suggests the possibility of wall-typed ZnO nanotubes. The size-dependent Young's modulus for ZnO nanowires and nanotubes is also calculated. The diameter and the wall thickness play a significant role in the Young's modulus of single crystalline ZnO nanowires and nanotubes, respectively.