• Title/Summary/Keyword: Write

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Autonomous Network Combination of RAID System to read/write Performance Improvement (RAID 시스템에서 자율적 네트웍 조합에 의한 읽기/쓰기 성능 개선)

  • 최귀열
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.1
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    • pp.158-163
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    • 2003
  • When the number of disks array systems that contain multiple disk drives, system performance is limited by a bottleneck at a centralized controller at a communication path than uses a bus. A redundant array of inexpensive disks(RAID) consists of many disks to enable high performance and large capacity. We evaluate a scalable architecture called Autonomous network, in which the controller functions are distributed to all disk drives and each disk has autonomy in processing its tasks. Disks drives enable better scalability and more effective utilization of system resources than with a hierarchical system. Autonomous network provided high read/write performance throughput in proportion to the number of disks.

Analysis of the Elementary School Participants' Readiness to Write on Scientific Subjects in Science Writing Contest (초등 분야 과학논술대회 참가자들의 과학 글쓰기 능력 분석)

  • Park, Eun-Hee;Jhun, Young-Seok;Lee, In-Ho
    • Journal of Korean Elementary Science Education
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    • v.26 no.4
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    • pp.385-394
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    • 2007
  • In order to investigate elementary school students' readiness to write on scientific subject, we analyzed the participants' draft in elementary student section [National Student Science Writing Contest] which is sponsored by a daily press. As a first step, we designed an assessment framework to analyze the students' writing. It is composed of three domains: scientific thinking, logical validity, creativeness. Each domain has three sub-domains. By using the framework, seven raters scored the students' inquiry reports. The findings reveal that the students needed the training for scientific writing. Especially they had great difficulty in the sub-domain of 'suggestion of rational alternative solution' in scientific thinking domain, the sub-domains of 'clearness' and 'coherence' in logical validity domain, and in the sub-domains of 'creative problem solving' and 'creative presentation' in creative domain.

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Special Memory Design for Graphics (그래픽스 전용 메모리 설계)

  • 김성진;문상호
    • Journal of Korea Multimedia Society
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    • v.2 no.1
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    • pp.80-88
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    • 1999
  • In this paper, we propose a Special Memory for Graphics(SMGRA) which accelerates memory access time for graphics operations. The SMGRA has a rectangular array memory architecture which has already proposed by Whelan to process pixels in the rectangle area simultaneously, but the SMGRA should improve address decoding time and reduce the number of address pins by using address multiplexing scheme. The SMGRA has a Z-value comparator in the DRAM which is to convert read-modify-write Z buffer into single-write only operation that improves approximately 50% frame buffer access bandwidth.

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Study on Layered File System for Service-customized Container (서비스 맞춤형 컨테이너를 위한 컨테이너의 레이어 파일 시스템 연구)

  • Yong, Chanho;Huh, Eui-Nam
    • Proceedings of the Korea Information Processing Society Conference
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    • 2017.04a
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    • pp.40-43
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    • 2017
  • OS-level 가상화 기술은 애플리케이션을 배포하기 위한 새로운 패러다임으로서, 가상 머신을 대체할 수 있는 기술이다. 특히 컨테이너는 기존의 리눅스 컨테이너에 유니온 마운트 포인트(Union Mount Point)와 레이어 구조의 이미지를 적용함으로써 보다 빠르고 효율적인 애플리케이션의 배포가 가능하다. 이러한 컨테이너의 특징들은 RoW(Redirect-on-Write), CoW(Copy-on-Write) 등의 스냅숏 기능을 제공하는 특정 파일 시스템에서만 사용될 수 있으며, 어플리케이션의 특징에 따라 적절한 파일 시스템을 사용해야한다. 따라서 본 논문에서는 컨테이너 이미지의 레이어구조를 사용할 수 있는 파일 시스템들의 특징을 설명하고 이에 따른 쓰기 작업의 성능 평가를 진행한다.

A study to improve the frame buffer access bandwidth (프레임 버퍼 액세스 대역폭 개선에 관한 연구)

  • Mun, Sang-Ho;Gang, Hyeon-Seok;Park, Gil-Heum
    • The Transactions of the Korea Information Processing Society
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    • v.3 no.2
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    • pp.407-415
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    • 1996
  • This paper introduces two schemes to improve the frame buffer access bandwidth. The first scheme suggests a rasterizer called SBUFRE that has Span Z Buffer and Span Z& Color Buffer within a rasterizer. The second scheme suggests a ZDRAM that has Z-value comparator within the DRAM. These schemes are to convert read- modify-write Z buffer compare into single write only operation that improves approximately 50% frame buffer access bandwidth.

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Measurements of the Thermally Stimulated Currents for Investigation of the Trap Characteristics in MONOS Structures (MONOS 구조의 트랩특성 조사를 위한 열자극전류 측정)

  • 이상배;김주연;김선주;이성배;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.58-62
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    • 1995
  • Thermally stimulated currents have been measured to investigate the trap characteristics of the MONOS structures with the tunneling oxide layer of 27${\AA}$ thick nitride layer of 73${\AA}$ thick and blocking oxide layer of 40${\AA}$ thick. By changing the write-in voltage and the write-in temperature, peaks of the I-T characteristic curve due to the nitride bulk traps and the blocking oxide-nitride interface traps ware separated from each other experimentally. The results indicate that the nitride bulk traps are distributed spatially at a single energy level and the blocking oxide-nitride interface traps are distributed energetically at interface.

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Array of SNOSFET Unit Cells for the Nonvolatile EEPROM (비휘방성 EEPROM을 위한 SNOSFET 단위 셀의 어레이)

  • 강창수;이형옥;이상배;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1991.10a
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    • pp.48-51
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    • 1991
  • Short channel Nonvolatile EEPROM memory devices were fabricated to CMOS 1M bit design rule, and reviews the characteristics and applications of SNOSFET. Application of SNOS field effect transistors have been proposed for both logic circuits and nonvolatile memory arrays, and operating characteristics with write and erase were investigated. As a results, memory window size of four terminal devices and two terminal devices was established low conductance stage and high conductance state, which was operated in “1” state and “0”state with write and erase respectively. And the operating characteristics of unit cell in matrix array were investigated with implementing the composition method of four and two terminal nonvolatile memory cells. It was shown that four terminal 2${\times}$2 matrix array was operated bipolar, and two termineal 2${\times}$2 matrix array was operated unipolar.