• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.220-220
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• 2011

The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 1999년도 추계학술발표회
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• pp.65-68
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• 1999

A plasma melting system to vitrify ny ash from MSW(Municipal Solid Waste) incinerator has been operated in SHI(Samsung Heavy Industries) since 1996. Waste feeding rate was 200kg/hr. with maximum working power of 500㎾. Because of high melting temperature of fly ash, bottom ash was used as an additive to decrease melting temperature. Data analysis for discharged slag shows volume reduction up to 30% and no leaching of heavy metals such as Pb, Cd, Cr which were an obstacle for landfill and recycle. Atmospheric pollution gas like nitrogen oxides, carbon monoxide, and PCDD/PCDF were restrained below the regulatory limit.

• 한국안전학회지
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• 제11권4호
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• pp.79-83
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• 1996

In this study, in attempt to develop a new application technique of discharge plasma, we employed a kind of discharging method called SPCP ( short for Surface discharge induced Plasma Chemical Process). Applications of SPCP have been widely used for years. Compact ozonizers to deodorize household equipments like refrigerators we a part of such applications. We took advantages of the compactness and durability of the SPCP electrode to set up an experimental apparatus for decompositing vapor of aromatic hydrocarbons such as toluene, benzene and xylenes, which are major substances given off In painting or washing processes and aggravate working conditions. Results obtained from this study are summarized as follows. 1) Aromatic hydrocarbon vapors of up to 2,000ppm were almost thoroughly decomposed at the flow rate of 4ℓ/min or lower under the discharge with electric power of 400 Watts. 2) In dry air, as the decomposition progresses, tar-like substance deposits on the discharging areas, which deteriorated the decomposition rate in the end. This substance, however, was almost thoroughly removed by keeping discharge in dry air containing no solvent vapor.

• 대한족부족관절학회지
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• 제26권4호
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• pp.187-191
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• 2022

The author experienced a case of autologous platelet-rich plasma (PRP) affecting the recovery of a chronic neuropathic diabetic foot ulcer combined with infection. A 65-year-aged male with uncontrolled diabetes presented with a Wagner grade 2 diabetic foot ulcer on his left forefoot of more than 2 weeks duration. Osteomyelitis, gangrene, and ischemia requiring acute intervention were absent. Although infection was controlled to a moderate degree, wound healing was unsatisfactory following surgical debridement and simple dressing. Therefore, intralesional autologous PRP injection was performed 5 times as an adjuvant regeneration therapy, and the recalcitrant ulcer healed in 3 months. Intralesional PRP injections are worthwhile as they promote wound regeneration, are evidence-based, safe, and can be easily performed in ambulatory care facilities.

• 한국세라믹학회지
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• 제52권3호
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• pp.224-227
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• 2015

In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{\Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices.

• 한국재료학회지
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• 제13권3호
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• 열처리공학회지
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• 제20권5호
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• pp.237-242
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• 2007

Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

• 마이크로전자및패키징학회지
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• 제8권2호
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• pp.31-36
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• 2001

Plasma Polymerization를 이용하여 Teflon-like 불화 유기 박막을 Si, $SiO_2$, Al, TEOS 위에 증착하였다. Difluoromethane $(CH_2F_2$)에 Ar, $O_2$, 그리고 $CH_4$를 첨가하여 첨가 가스에 따른 불화 유기 박막의 특성을 평가하였다. 각각의 첨가가스에 대하여 압력, 온도, 그리고 첨가가스의 비율을 변화시켜 박막을 증착하여 정접촉각 통한 표면의 친수성 (hydrophilicity)과 소수성(hydrophobicity) 정도를 관찰하였다. Ar을 첨가한 경우 Ar 첨가량과 power의 증가에 따라 정접촉각의 감소를 관찰하였다. 그러나 증착압력이 증가함에 따라 정접촉각이 증가하였다. Ar 첨가시 2 Torr이상의 증착압력에서 분말형태의 초소수성 불화 유기박막을 얻을 수 있었다. $O_2$를 첨가한 경우, $O_2$의 첨가량과 증착압력이 증가함에 따라 정접촉각은 감소하였다. 약 100W까지의 power에서는 정접촉각은 일정하였지만 power의 증가에 따라 정접촉각은 감소하여 200W에서는 천수성표면을 얻을 수 있었다. $CH_4$를 첨가하여 불화유기박막을 증착하였을 경우 $CH_4/CH_2F_2$비율이 5까지 급격한 증가를 나타내었고, 비율이 5이상인 경우에서는 일정한 정접촉각을 나타내었다. 화학기상증착에 의해 제조된 박막보다 plasma polymerization으로 제작된 불화유기박막이 히스테리시스(hysteresis)가 낮은 불화유기박막을 형성하였다.