• 제목/요약/키워드: Working Plasma

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HIV, HCV와 HBV 유전자 분석시약의 성능 및 품질관리용 Plasma Working Standards 제조에 관한 연구 (Establishment of Plasma Working Standards for the Performance and Quality Assurance of NAT Screening Tests for HIV, HCV and HBV)

  • 김명한;조연정;권소영;조남선
    • 대한수혈학회지
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    • 제23권2호
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    • pp.152-161
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    • 2012
  • 배경: 2012년 1월부터 국내에 신규로 도입되는 고위험군 바이러스 검사시약은 국내 검체를 이용한 성능 시험분석을 실시하여 식품의약품안전청 허가를 득하도록 일부 규정이 개정되었다. 이러한 바이러스 진단시약의 성능시험과 품질관리 규정을 이행하기 위해서는 국내 검체에서 유래된 국가표준물질이 필요하다. 이에 본 연구에서는 바이러스 핵산증폭검사시약의 성능평가와 품질관리를 위하여 다양한 농도로 구성된 HBV, HCV와 HIV의 핵산증폭검사용 혈장유래 표준물질(plasma working standards)을 제조하고자 하였다. 방법: 수혈 부적격의 HCV RNA 양성혈장 43단위, HCV RNA 양성혈장 25단위, 그리고 HIV RNA 양성혈장 26단위에 대해 핵산 정량검사와 유전자형 검사를 실시하였다. 이를 바탕으로 국내에서 유행하는 바이러스의 유전자형을 가진 고농도의 원료혈장을 선정하였다. 또 표준물질의 다양한 농도는 국내외 검사시약의 검출범위에 근거하여 적정한 농도범위를 선택한 후, 다양한 농도로 원료물질을 희석하고, 분병 처리 한 후 정량적으로 분석하였다. 결과: HBV, HCV와 HIV의 체외진단분석기용 핵산증폭검사의 성능평가용 plasma working standards는 총 13종의 다양한 농도물질로 제조되었다. 결론: 국내에서 혈액관련 고위험군 HBV, HCV와 HIV의 체외진단용 핵산증폭검사 시약의 성능 평가에 필요한 바이러스 핵산 검사용 국가표준물질을 처음 제조하여 그 기술을 수립하였다.

플라즈마 포커스를 이용한 크롬 산화물 박막 성장의 분위기 기체 압력 의존성 연구 (Dependence of Gas Pressure on Cr Oxide Thin Film Growth Using a Plasma Focus Device)

  • 정규호;이재갑;임현식;;;이전국
    • 한국재료학회지
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    • 제17권6호
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    • pp.308-312
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    • 2007
  • Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

Applications of Plasma Modeling for Semiconductor Industry

  • Efremov, Alexandre
    • E2M - 전기 전자와 첨단 소재
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    • 제15권9호
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    • pp.10-14
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    • 2002
  • Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

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Analysis of Factors Impacting Atmospheric Pressure Plasma Polishing

  • Zhang, Ju-Fan;Wang, Bo;Dong, Shen
    • International Journal of Precision Engineering and Manufacturing
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    • 제9권2호
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    • pp.39-43
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    • 2008
  • Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.

Cu 박막의 특성개선을 위한 플라즈마를 이용한 $H_2$ 전처리 효과 (Effects of $H_2$ Pretreatment using plasma for improved characteristics of Cu thin films)

  • 이종현;이정환;최시영
    • 한국진공학회지
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    • 제8권3A호
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    • pp.249-255
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    • 1999
  • Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.

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수용성 절삭유의 Copper Alloy Metal Fiber에 의한 항균 특성에 관한 연구 (A Study on the Antimicrobial Activity of Copper Alloy Metal Fiber on Water Soluble Metal Working Fluids)

  • 송주영;이상호;박근호
    • 한국응용과학기술학회지
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    • 제24권3호
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    • pp.233-237
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    • 2007
  • This study is focused on the possibility of copper alloy metal fiber for an antimicrobial activity in the water soluble metal working fluids. Electrochemical potential of Cu/Zn ion is -268mV, and easily makes radicals with molecular oxygen. Especially, hydroperoxide radical shows strong toxicity to the strains. Plasma membrane causes conformational change when hydroperoxide radical binds to plasma membrane. Elution of copper ion from copper alloy metal fiber is detected in metal working fluid. As a result antimicrobial activity of copper alloy metal fiber in metal working fluid is superior to that of copper fiber.

Association of Backfat Thickness with Postheparin Lipoprotein Lipase Activity and Very Low Density Lipoprotein-Subfractions in Growing Pigs

  • Loh, T.C.;Lean, I.J.;Dodds, P.F.
    • Asian-Australasian Journal of Animal Sciences
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    • 제14권11호
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    • pp.1592-1597
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    • 2001
  • Sixteen pigs from 2 distinct genetic lines (LGAH and VFIL) obtained after eight generations of divergent selection for high (H) and low (L) lean tissue growth rate with ad-libitum feeding (LGA) and voluntary feed intake (VF1), respectively, were used in this study. The objectives of this investigation were to establish appropriate working conditions for the postheparin plasma lipoprotein lipase (LPL) assay and to study relationships between fat deposition and plasma lipids, very low density lipoprotein (VLDL) lipids, VLDL-subfractions and postheparin plasma LPL activity in growing pigs. Four preliminary experiments were performed to determine the appropriate working conditions for the postheparin plasma LPL assays. Postheparin plasma preincubated with SDS (20-50 mM) at $26^{\circ}C$ for 45 minutes inhibited hepatic lipase activity. A total of $2{\mu}l$ VLDL/assay produced maximum stimulation of LPL activity. Postheparin plasma protein and increasing incubation time contributed an optimum response. LGAH pigs had a significantly higher proportion subtraction 2 than VFIL pigs. No differences were observed in postheparin plasma LPL activity and backfat thickness for two lines of pigs. There were positive correlations between backfat thickness and proportion of subtractions 2 and postheparin plasma LPL activity but the results were not statistically significant. Backfat thickness was not statistically correlated with proportion of subtraction 2 and postheparin plasma LPL activity in a multiple regression analysis. It is believed that the apolipoprotein E, which is present in higher quantities in VLDL-subfraction 2 plays an important role for clearing VLDL triacylglycerol into adipose tissue. LPL activity of pigs can be measured by using postheparin plasma technique. If the relationships of backfat thickness and VLDL-subfraction 2 and postheparin plasma LPL activity can be established, it suggests that these parameters could be used as indicators in selection programmes. Further experiments need to be conducted by using larger sample size and different breed of pigs with greater differences in backfat thicknesses to confirm these trends.

AC PDP의 전기광학적 특성과 동작 Gas $Xe_x+Ne_y+He_{1-y)$의 상관관계에 관한 연구 (A Study on the Relationships Between the Electrooptical Characteristics and Working Gas Xe+Ne+He)

  • 박정후;유수복;이해준;이호준;김재성;이돈규
    • 전기학회논문지
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    • 제56권9호
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    • pp.1619-1625
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    • 2007
  • The gas mixture ratio of PDP discharges plays a very important role in the discharge characteristics of a plasma display panel. The increase of Xe contents results in the increases of luminance and luminous efficiency while it also results in the increase of the breakdown voltage. The addition of He gas increases the brightness and the luminous efficiency. Especially, the luminance and the luminous efficiency have a maximum value when the partial pressure of He is about 10% of the total pressure for a standard plasma display panel with Xe fraction of $10\sim30%$.

Langmuir 프로브 전압의 파형에 따른 아르곤 플라즈마의 전자에너지 분포함수 측정에 관한 연구 (A Study on the measurement of Electron Energy Distribution Function in Ar plasma measured by the waveforms of Langmuir probe voltages)

  • 김두환;박정후
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권5호
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    • pp.391-395
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    • 1999
  • In this paper, we have obtained the Electron Energy Distribution Function(EEDF) in plasma by using two differentiators and investigated the EEDFs by sawtooth and triangle waveform voltages with the working pressures and the positions of single probe. It is found that as the working pressure is decreased, the EEDFs approach to theMaxwellian distribution independent of the waveforms of probe voltage. On the otherhand, as the position of probe is moved from the center of the plasma to its edge, the EEDF of sawtooth waveform probe voltage approaches to the Maxwellian distribution, but the EEDF of triangle waveform probe voltage deviates from the Maxwellian distribution.

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