Abstract
Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.
