• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.109-112
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• 1998

SAW filters of transversal type were fabricated on some piezoelectric substrate of the LN 128 $^{\circ}$ Y-X waters through the simulation in which the number of IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 1.63$\mu\textrm{m}$, 1.239$\mu\textrm{m}$, respectively. Titanium thin films having different thicknesses were introduced between the Al electrode and the substrate for improving the power resistance strength due to its high temperature durability and good adhesion characteristics. All of specimens showed similar insertion loss results, which means the possibility of introducing the Ti layer though it is known to have a higher resistivity leading to a worse insertion loss result. Ti inserted specimens had a better power durability than that of pure Al electrode though their thickness had no effect on the performance.

• Journal of Welding and Joining
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• v.20 no.2
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• pp.95-101
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• 2002

After high power lasers are avaliable in the commercial market, the number of applications of the laser welding has been increased in manufacturing industries. Although the tailored blank laser welding of butt jointed steel sheets is well known recently in the automotive industries, the lap joint laser welding is a new technology to the automotive manufacturing people as well as the design people. But the deep penetration laser welding seems to be preferred to the partial penetration welding for the lap joint welding in the automotive manufacturers because the partial penetration is a serious deflect for the butt joint. In this study, the feasibility of partial penetration welding fur the lap joint $CO_2$ laser welding was studied fur the 1mm thick 390MPa high strength steel sheets for automotive bodies. The process window of the lap joint partial penetration welding was obtained from experiments with the gap size and the welding speed as process parameters. The partial penetration welding was found excellent on the basis of the tensile shear strength and sectional geometry. The bead width, input energy Per volume, tensile-shear strength, deformation energy and the sectional geometries after tensile-shear tests of partial penetration welded specimens are compared with those of full penetration welded specimens with a series of gaps and welding speeds.

• KIEAE Journal
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• v.4 no.1
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• pp.11-20
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• 2004

Innovative daylighting systems in buildings in various climatic zones around the world have been developed under the IEA SHC Task21. The performance assessment were obtained by monitoring the most systems using full-scale test model rooms or actual buildings under real sky conditions. This study aims to analyze the configuration and monitoring system of the nine Mock-up models of the IEA SHC Task21 comparatively. For the purpose, the geometry of the test rooms (length, width, height, window area, glazed area and occupied), reflectance of walls, floor and ceiling, transmittance of glazing (transmittance for hemispherical irradiation, normal irradiation and U-value) were compared. And equipment for measurement (manufacturer, range, calibration, maximum calibration error, cosine response error, fatigue error), and data acquisition system (manufacturer, type, number of differential analogue input channels, A/D converter resolution in bits, data acquisition software) were also analyzed comparatively. Some findings of these experimental methodology of standard monitoring have been proven to be a valuable one for future assessment of advanced daylighting systems in our country.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.9
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• pp.754-760
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• 2008

A two-photon induced photoreduction process suggests a possibility for fabricating complicated metallic microstructures which can be applied to 3-D micro-circuits and optical devices, etc. The process employs the photoreduction of silver ions in a metallic solution which is composed of metallic salt ($AgNO_3$) and watersoluble polymer ((poly(4-styrenesulfonique acid) 18wt. % in $H_2O$, $(C_8H_8O_3S)_n$)). In this process, the improvement of the resolution and the uniformity of fabricated metallic structures are important issues. To address these problems, continuous forming window (CFW) is obtained from a parametric study on the conditions of laser power and scanning velocity and the direct seed generation (DSG) method is proposed. Silver nano particles are uniformly generated in a metallic solution through the DSG method, which enables the decrease of a laser power to trigger the photoreduction of silver ions as well as the increase of metal contents in a metallic solution. So the two-photon induced photoreduction property of a metallic solution is improved. Through this work, precise silver patterns are fabricated with a minimum line width of 400 nm.

• The Research Journal of the Costume Culture
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• v.9 no.2
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• pp.259-276
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• 2001

Hitchcock, "a master of the thriller" "leading figure of thriller", was famous for his work style. He never starts filming until completing a perfect conception in his mind before shooting. He started filming after getting a perfect filming plan adding a picture even one detailed shot picture. Also the movie costumes was not an exception in his movie. He put more main object to express a symbolic meanings by recreating movie costumes which were fit to drama′s subject than function which spoke for contemporary popularity also he guides actors to put on the movie costumes examined previously to shape a definite visual character in that works. This research intends not only to look into symbolic and expressive means of dresses through the movie costumes on thriller appeared in Hitchcock′s movie, but also the comprehension width by grasping importance of the movie-costume and dress image in the movie. Hitchock made about 55 movies, mostly thriller movies, from Number 13(1922) n unfinished work to family plot(1976) ones posthumous work. This research examined his the second half of term works(after 1950) such s Rear Window(1954), Vertigo(1958), Psycho(1960), Torn Curtain(19660, Topaz(1969) and Frenzy(1972) which are generally familiar to the public. In conclusion, we can find that the thriller movie costumes as well s the other movie and appeared a character of the film′s characters, social rank, economic level, personality. But expecially, a costume of Hitchcock′s thriller movie can be contained a characteristic factor of a kind of five.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.7
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• pp.3455-3474
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• 2018

As a unique form of signed-digit representation, non-adjacent form (NAF) minimizes Hamming weight by removing a stream of non-zero bits from the binary representation of positive integer. Thanks to this strong point, NAF has been used in various applications such as cryptography, packet filtering and so on. In this paper, to improve the NAF conversion speed of the $NAF_w$ algorithm, we propose a new NAF conversion algorithm, called w-bit Shifting Non-Adjacent Form($SNAF_w$), where w is width of scanning window. By skipping some unnecessary bit comparisons, the proposed algorithm improves the NAF conversion speed of the $NAF_w$ algorithm. To verify the excellence of the $SNAF_w$ algorithm, the $NAF_w$ algorithm and the $SNAF_w$ algorithm are implemented in the 8-bit microprocessor ATmega128. By measuring CPU cycle counter for the NAF conversion under various input patterns, we show that the $SNAF_2$ algorithm not only increases the NAF conversion speed by 24% on average but also reduces deviation in the NAF conversion time for each input pattern by 36%, compared to the $NAF_2$ algorithm. In addition, we show that $SNAF_w$ algorithm is always faster than $NAF_w$ algorithm, regardless of the size of w.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.510-516
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• 2002

Recently the laser welding technology has been applied increasingly for the automotive bodies. But the lap joint laser welding for 3 dimensional automotive body is new while the butt joint laser welding is well known as the tailored blank technology. In this study, the process window was found for the full penetration welding of the lap joint of the 1mm-thick high strength steel sheets. The limit curves and characteristic curves were suggested to define the boundaries and the contour lines in a space of the welding speed and the gap size. The characteristics of the weld sectional geometry were used to determine the limit curves. They are bead width, penetration depth and sectional area. After the observed data was analysed carefully, it was noticed that there was a transition point at which the sectional shape was changed and the bead area jumped as the welding speed was increased. Also a new concept of 'input energy Per volume' was suggested to distinguish the difference at the transition Point. The difference of sectional areas at the transition point can be related to the dynamic keyhole phenomena.