• Journal of the Korea Fashion and Costume Design Association
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• v.12 no.2
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• pp.75-90
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• 2010

Teenagers are considered as one of important consumer groups by marketers because of their high purchasing power and impulsive purchasing propensity. Especially high school girls are most significant purchasing group of them. The purpose of this study is to investigate the effect of high school girls' lifestyle on shoes purchasing behavior and shoes wearing satisfaction. This study surveyed 428 high school girls in Seoul and Chonbuk area. Data were statistically analyzed using SAS 9.1.3 for Window. Major statistical methods are factor analysis, Cronbach's ${\alpha}$ coefficient, cluster analysis, frequency analysis, Chi-square test, multiple regression analysis, ANOVA and Duncan test. The shoes purchasing behavior is significantly different according to students' lifestyle. Activity-pursuing group's major shoes purchasing factor is practical use and fashion & scholar-pursuing group's major shoes purchasing factors are fashion and brand. Relationship between lifestyle and shoes purchasing pattern is as follows. Activity-pursuing group and fashion & scholar-pursuing group purchased shoes more frequently than family-pursuing group. Fashion & scholar-pursuing-group purchased shoes for the harmony of suit and shoes. As for wearing satisfaction, design is the primary factor and price was the least significant factor in sports shoes, while durability is the primary factor and material is the least significant factor for the casual shoes.

• Korean Institute of Interior Design Journal
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• v.25 no.1
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• pp.56-64
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• 2016

Housing for the elderly should be planned on the base of elder's needs and preferences as well as their physical, emotional, and socio-psychological characteristics. This study examined the interior style of bedroom and living room the elderly preferred and these preferences are significantly different depending on their characteristics and cognitive ages, or not. This study was carried out by face to face interview with a questionnaire and 6 colored printed 3D images. The subjects were 202 old aged who lives in Busan. The interior style of bedroom and living room were classified into 3 styles; Korean traditional style, Western classical style, and modern style. The subjects made a choice their preferred interior style among three 3D images per each room and answered the reasons. Also, they answered their cognitive ages and general characteristics, and their preferences for the layout of living room-dining room-kitchen, use pattern, floor finishes, and furniture of bedroom and living room. The results were as follows; 1) The subjects preferred bed in bedroom and sofa in living room. Also, they wanted to finish the floor of bedroom and living room by using synthetic material, traditional floor paper, and wood. 2) The elderly preferred Western classical style of bedroom. The reasons were general mood such as warm, comfort, or bright, and the color. 3) These preferred styles were not any significant differences according to their characteristics and cognitive ages. 4) They preferred Korean traditional style, Western classical style, and modern style, in order. They preferred them for their general mood and window. 5) Their preferred styles were significantly different according to their housing types and cognitive ages.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.1-64
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• 2003

A metal-ferroelectric [SrBi$_2$Ta$_2$O$\_$9/ (SBT)-high-k-insulator(PrOx)-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulator-semiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention characteristics by increasing the dielectric constant in the insulator layer and suppressing the depolarization field in the SBT layer. A 20-nm PrOx film grown on Si(100) showed both a high of about 12 and a low leakage current density of less than 1${\times}$ 10e-8 A/$\textrm{cm}^2$ at 105 MV/cm. A 400-nm SBT film prepared on PrOx/Si shows a preferentially oriented (105) crystalline structure, grain size of about 130 nm and subface roughness of 3.2 nm. A capacitance-voltage hysteresis is confirmed on the Pt/SBT/PrOx/Si diode with a memory window of 0.3V at a sweep voltage width of 12 V. The memory retention time was about 1 104s, comparable to the conventional Pt/SBT/SiO$\_$x/N$\_$y/(SiO$\_$N/)/Si. The gradual change of the capacitance indicates that some memory degradation mechanism is different from that in the Pt/SBT/SiON/Si structure.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.35 no.6
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• pp.442-450
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• 2009

Purpose: Simultaneous implantation has been traditionally limited to patients with at least 5 mm of residual bone to ensure that the implant is completely stabilized. This is considered to be one of the most critical factors for primary implant stability and parallelism and, subsequently osseointegration. Recently, improved initial implant stability is provided by advancement of surgical techniques, implant designs and surface treatments. This has led surgeons to extending simultaneous treatment option to patients with below 4 mm of residual bone height, despite the lack of much data. The purpose of this study was to retrospectively evaluate and compare the status of implants which are installed by delayed and simultaneous methods. Material and methods: The subjects were patients(121 patients, 278 implants) who had been operated with sinus lifting from 2003 to 2007 in Sun Dental Hospital. Lateral window approach with autograft and xenograft(1:1 ratio) were carried out for all sinus lifting. 4 types of implant were used. The mean follow up period was 26.3 months(19 - 58 months) in delayed group, and 22.8 months(18 - 43 months) in simultaneous group. Results: The survival rate of implant restoration of this study was 98.2% in delayed group and 91.7% in simultaneous group. In simultaneous group, wide-platform type implants showed 100% survival rate. The total average of marginal bone loss in radiographs was $0.96\;{\pm}\;0.29\;mm$ in delayed group and $1.02\;{\pm}\;0.31\;mm$ in simultaneous group. Conclusion: Simultaneous implantation with sinus lifting(below 4mm of residual bone height) could be predictable treatment.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1996.11a
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• pp.42-48
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• 1996

Glare phenomenon by sun's altitude and strong sunlight make a much visual handicap. And so, it reaches to unreadable situation although enough illumination in the fore site student of a window site and passage site. In school student seat arrange in the order of their height. So, cause the eyesight acuity according to distance is different, eyesight of backseat's student drop 1.0 and less in spite of 1.0, a learning effect reduces rather then that of the fore site student for site and Passage sitestudents. Therefore. in school, the conclusion's alteration of school structure, position's alteration and material quality's improvement of blackboard are needed, should be local lighting in blackboard. Therefore, we think that in other in improve the effect of lesson by the student, the student seats are not given by uniform disposition in the order of their height but change by a specified period.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.33 no.3
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• pp.241-248
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• 2011

Purpose: The aim of this study was to present the clinical results of maxillary sinus augmentation implants and to evaluate the effects of various factors on the implant survival rate. Methods: In a total of 112 patients, 293 implants after sinus augmentation were performed. The total survival rate and the influence of the following factors on implant survival were evaluated; patient characteristics (sex, age, smoking, general disease), graft material, implant surface, implant installation stage, site of implant placement, length and width of implant, closure method for osseous window, residual alveolar bone height. Results: 1. Age ranged from 16 to 70 yr, with a mean of 45.7 yr. 2. Cumulative survival rate for the 293 implants with the maxillary sinus augmentation procedure was 94.9%. 3. Simultaneous implant installation was performed in 122 patients and delayed implant installation was performed in 117 implants. The average healing period after sinus elevation was 7.3 months for delayed implant installation and this procedure had a significantly higher survival rate. 4. There were no significant differences in sex, age, smoking, general disease, site of implant placement, length and width of implant, residual alveolar bone height and the survival rate. 5. RBM (Resorbable Blasting Media) implant surface and allograft groups had significantly lower survival rates. Conclusion: These data suggest that maxillary sinus augmentation may give more predictable results for autogenous bone grafts and delayed implant placement.

• Journal of Radiation Protection and Research
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• v.10 no.1
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• pp.14-28
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• 1985

The development of mono energetic photon sources using $K_{\alpha}$ fluorescence X-ray of pure material was carried out in the energy range below 100 keV. The monoenergetic photons are very useful in the calibration of the radiation measuring instruments and can be produced as the $K_{\alpha}$ fluorescence X-ray by irradiating the bremsstrahlung to the thin pure metal foils called ‘radiators’. In this experiment, several radiators such as $_{47}Ag,\;_{50}Sn,\;_{68}Er,\;_{70}Yb,\;and\;_{82}Pb$ provide the wide monoenergetic photon energy ranging from 20 keV to 80 keV. By the spectrometry with HpGe LEPS, spectral purity factors which measure the monochrometicity for the $K_{\alpha}$ fluorescence X-ray, were determined as $0.64{\sim}0.94$. Dosimetry for the purpose of the determination of the exposure rate with a 600cc thin window ionization chamber, which was calibrated by the standard free-air ionization chamber, was performed. Exposure rates ranging $8.3{\sim}232.5mR/h$ was obtained according to the $K_{\alpha}$ fluorescence X-ray energy for each radiator.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.70-74
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• 1995

We have observed anisotropic anodisation process for porous silicon formation. The starting material was (100) silicon $n/n^{+}/n$ wafer structured by $n^{+}$-diffusion on n-type substrate and by subsequent n-epitaxial growth. After the top n-silicon epitaxial layer was etched to open the porous silicon layer(PSL) anodisation window, anodisation takes place only to $n^{+}$-buried layer. The process of porous silicon formation on (100) sample was anisotropic, which was evident from that the shapes of the reacted porous silicon layer was all squarelike regardless of the shapes of reaction windows. The experimental results show that the PSL anodisation process does not depend on chemical reaction but does on electrical conduction property, which is hole mobility depending on the crystal direction.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.10-15
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• 2013

In order to fabricate high sensitive and stable biosensors, we require the material with superior biocompatibility and physical-chemical stability. Many kinds of biomaterials have been evaluated to apply for bioindustry. Recently, carbon based diamond thin films have been focal pointed as bio-applications and their possibility has been evaluated. Diamond thin film has many advantages for electrochemical and biological applications, such as wide potential window (3.0-3.5V), low background current and chemical-physical stability. In this work, we have cultured neuroblastoma cell (SH-SY5Y) on the crystalline diamond films. We use MTT assay to evaluate the characteristic of cell culture on the substrates. As a result, neuroblastoma cell was cultured on the crystalline diamond film as similar as cell culture dish.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.