• 제목/요약/키워드: Wide voltage range

검색결과 693건 처리시간 0.032초

넓은 출력 전압제어범위를 갖는 3레벨 단상 단일전력단 AC/DC 컨버터 (Three Level Single-Phase Single Stage AC/DC Resonant Converter With A Wide Output Operating Voltage Range)

  • 마리우스;김민지;오재성;이강우;김은수;황인갑
    • 전력전자학회논문지
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    • 제23권6호
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    • pp.424-432
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    • 2018
  • This study presents a single-phase single-stage three-level AC/DC converter with a wide controllable output voltage. The proposed AC/DC converter is designed to extend the application of e-mobility, such as electric vehicles. The single-stage converter integrates a PFC converter and a three-level DC/DC converter, operates at a fixed frequency, and provides a wide controllable output voltage (approximately 200-430Vdc) with high efficiencies over a wide load range. In addition, the input boost inductors operate in a discontinuous mode to improve the input power factor. The switching devices operate with ZVS, and the converter's THD is small, especially at full load. The feasibility of the proposed converter is verified by the experimental results of a 1.5 kW prototype.

TG Inverter VCDL을 사용한 광대역 Dual-Loop DLL (A Wide-Range Dual-Loop DLL using VCDL with Transmission Gate Inverters)

  • 이석호;김삼동;황인석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.829-832
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    • 2005
  • This paper describes a wide-range dual-loop Delay Locked Loop (DLL) using Voltage Controlled Delay Line (VCDL) based on Transmission Gate(TG) inverters. One loop is used when the minimum VCDL delay is greater than a half of $T_{REF}$, the reference clock period. The other loop is initiated when the minimum delay is less than $0.5{\times}T_{REF}$. The proposed VCDL improves the dynamic operation range of a DLL. The DLL with a VCDL of 10 TG inverters provides a lock range from 70MHz to 700MHz when designed using $0.18{\mu}m$ CMOS technology with 1.8 supply voltage. The DLL consumes 11.5mW for locking operation with a 700MHz reference clock. The proposed DLL can be used for high-speed memory devices and processors, communication systems, high-performance display interfaces, etc.

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Design A High Efficiency Auxiliary Power Supply with Wide Input Voltage Range for PV-PCS

  • Jin, Cheng-hao;Li, Shan-mei;Kim, Jin-tae
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2012년도 전력전자학술대회 논문집
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    • pp.343-344
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    • 2012
  • In high power PV generation system, the solar cell normally generates wide output voltage depending on the insolation, cell's temperature and shade effect. This paper will propose a high efficiency converter allowing the wide input voltage to supply stable voltage with the controller and operation for the PV generation system. The proposed converter consists of two stages comprising SEPIC with a coupled inductor and LLC, which generates 24 V of output at the final output terminal. In this paper, a design method and experimental results with a test-bed of 50 W will be presented to validate the proposed converter.

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Design of CMOS OTA-C Integrator with a Wide Linear Input Range

  • Shin, Yun-Tae;Ahn, Joung-Cheol;Shin, Kyoo-Jae;Kim, Dong-Yong
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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    • pp.465-468
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    • 1988
  • A n-well CMOS Operational Transconductance Amplifier -C(OTA-C) integrator with a wide linear input range is designed. The circuit designed has superior linearity of input voltage range compared with the conventional source-coupled pair OTA. The OTA developed in this paper is versatile in application: diverse applications are in the fields of linear amplifiers, continuous-time filters, gain control circuits, and analog multipliers, etc..

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실화가스 흐름에 대한 광역 산소센서의 응답특성 및 이를 이용한 실화감지 (The Response of a Wide-Range Oxygen Sensor to the Flow of Misfired Gas and Its Application for the Misfire Detection)

  • 정영교;최상민;배충식;명차리
    • 한국자동차공학회논문집
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    • 제8권2호
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    • pp.41-49
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    • 2000
  • To understand the signal fluctuation of a wide-range oxygen sensor installed at the exhaust confluence point, when a misfiring is triggered in a cylinder, the steady state and the transient response characteristics of the sensor to the flow of the misfired gas were investigated quantitatively. It was recognized that the steady state output voltage of the sensor increased higher when it contacted the misfired gas even though the fueling condition was the same as the normal combustion case and this characteristic enabled the application of the wide-range oxygen sensor for the misfire detection. The transient response was compared at different engine speeds and it was found that the response speed increased with the engine speed. The signal fluctuation was also estimated quantitatively, using these steady state and transient response of the sensor, and the estimated signal showed satisfactory correlation with the measurements.

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인식거리 향상을 위한 UHF 대역 RFID 태그용 전압체배기 설계 (Design Consideration of the Voltage Multiplier of UHF RFID Tag for Increased Reading Range)

  • 이종욱;이범선
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.587-590
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    • 2005
  • We investigated the input impedance characteristics of UHF-band RFID tag chip for increased reading range. A voltage multiplier designed using 0.4 ${\mu}m$ $zero-V_T$ MOSFET showed that DC output voltage of 2 V can be obtained using standard CMOS process. The input impedance of the voltage multiplier was examined to achieve impedance level for maximum reading distance using analytical and numerical approaches. The input impedance of the voltage multiplier could be varied in a wide range by selecting the size of MOSFET and the number of multiplying stages of the voltage multiplier, and thus, the impedance level required for the tag antenna can be obtained in presence of other tag circuit blocks.

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보조 스위치를 사용한 ZVS Two-Switch 포워드 컨버터에 대한 연구 (A Study of ZVS Two-Switch Forward Converter Using Auxiliary Switch)

  • 정민혁;김용;엄태민;이규훈;이동현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.965_966
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    • 2009
  • In this paper, a new soft-switching Two-switch Forward converter topology has been proposed. Compared with conventional two-switch forward converter, the proposed converter employs an auxiliary switch and a clamp capacitor to instead of two reset diodes, not only its duty cycle can exceed 0.5 to achieve wide range input voltage, but also soft switching can be achieved for all switches. Especially, voltage stress across main switches can be clamped at $1/2V_{in}$, voltage stress across auxiliary switch can be clamped at $V_{in}$. In addition, due to clamp capacitor series with the transformer, duty ratio can be extended with equation $V_o=\frac{V_{in}(1-D}D{N}$. Therefore, as a kind of better cost-effective approach, it is very attractive for high input, wide range and high efficiency application.

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넓은 범위 입력전압에 소프트 스위칭이 가능한 양방향 인터리브드 DC-DC 컨버터 (Bidirectional Soft Switching Three-Phase Interleaved DC-DC Converter for a Wide Input Voltage Range)

  • 최우진;이교범;정규범
    • 전력전자학회논문지
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    • 제20권4호
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    • pp.313-320
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    • 2015
  • This study deals with a bidirectional interleaved soft switching DC-DC converter for a wide range of input voltages. The proposed converter operates in complementary switching with the purpose of inductor size reduction and zero-voltage switching (ZVS) operation. The current ripple related to complementary switching is minimized by three-phase interleaved operation. The main characteristics of the proposed topology are its soft-switching method of operation and its simple structure. The soft-switching operation and the system efficiency of the proposed converter are verified by experimental results.

Multistress Life Models of Epoxy Encapsulated Magnet wire under High Frequency Pulsating Voltage

  • Grzybowski, S.;Feilat, E.A.;Knight, P.
    • KIEE International Transactions on Electrophysics and Applications
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    • 제3C권1호
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    • pp.1-4
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    • 2003
  • This paper presents an attempt to develop probabilistic multistress life models to evaluate the lifetime characteristics of epoxy-encapsulated magnet wire with heavy build polyurethane enamel. A set of accelerated life tests were conducted over a wide range of pulsating voltages, temperatures, and frequencies. Samples of fine gauge twisted pairs of the encapsulated magnet wire were tested us-ing a pulse endurance dielectric test system. An electrical-thermal lifetime function was combined with the Weibull distribution of lifetimes. The parameters of the combined Weibull-electrical-thermal model were estimated using maximum likelihood estimation. Likewise, a generalized electrical-thermal-frequency life model was also developed. The parameters of this new model were estimated using multiple linear regression technique. It was found in this paper that lifetime estimates of the two proposed probabilistic multistress life models are good enough. This suggests the suitability of using the general electrical-thermal-frequency model to estimate the lifetime of the encapsulated magnet wire over a wide range of voltages, temperatures and pulsating frequencies.

CMOS Image Sensor with Dual-Sensitivity Photodiodes and Switching Circuitfor Wide Dynamic Range Operation

  • Lee, Jimin;Choi, Byoung-Soo;Bae, Myunghan;Kim, Sang-Hwan;Oh, Chang-Woo;Shin, Jang-Kyoo
    • 센서학회지
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    • 제26권4호
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    • pp.223-227
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    • 2017
  • Conventional CMOS image sensors (CISs) have a trade-off relationship between dynamic range and sensitivity. In addition, their sensitivity is determined by the photodiode capacitance. In this paper, CISs that consist of dual-sensitivity photodiodes in a unit pixel are proposed for achieving wide dynamic ranges. In the proposed CIS, signal charges are generated in the dual photodiodes during integration, and these generated signal charges are accumulated in the floating-diffusion node. The signal charges generated in the high-sensitivity photodiodes are transferred to the input of the comparator through an additional source follower, and the signal voltages converted by the source follower are compared with a reference voltage in the comparator. The output voltage of the comparator determines which photodiode is selected. Therefore, the proposed CIS composed of dual-sensitivity photodiodes extends the dynamic range according to the intensity of light. A $94{\times}150$ pixel array image sensor was designed using a conventional $0.18{\mu}m$ CMOS process and its performance was simulated.