• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.525-535
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• 2004

In this paper, a two-phase DZRCD(Dual Zero Vector Modes RCD) technique is proposed to develope the problem of a conventional two-phase RCD-PWM (Random Centered Distribution PWM) which gives the power spectra of narrow band range in the high modulation index (M). In the proposed DZRCD technique, the zero vector $V_0$ is selected as $V_0$(111) for M$\geqq$0.8. Also, $V_0$ is selected as $V_0$(000) for the modulation indices < 0.8. For the unplementation of the proposed method, a 16-bit micro-controller Cl67 was used and the experiments were conducted with the 1.5kw induction motor under no load condition. The experimental results show that the voltage / current spectra is spread to a wide band range, and the switching noise of motor is reduced by the proposed method compared to the conventional random operation.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.195-200
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• 2015

This paper presents SVBS-TDC (Semi-Vernier Binary-Search Time-to-Digital Converter) for the noise improvement of ADPLL (All-Digital Phase Locked Loop. We used a Semi-Vernier BS-TDC (Binary-Search TDC) architecture to improve the operation speed more then 10 times compared with the previous conventional BS-TDC and ensured a 510ps wide input range. The proposed Semi-Vernier BS-TDC was designed in a 65ns CMOS process and the simulation results showed 200MHz speed and 4ps resolution with a 1.2V supply voltage, and considerable noise improvement of ADPLL.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.424-424
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• 2008

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.45 no.3
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• pp.51-58
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• 2008

This paper is a study of a prevention of power folding controller's thermal degradation. Power folding technology has been applied for many fields such as side rear vision mirror of vehicles, windshield wiper, antenna, power window. These controllers have been comprised with traditional DC moors, Switching electronic devices, and relays. But this methods have a limitation to overcome such problems of product reliability, endurance, noise margins. Therefore on this paper, to detect the movement of motor, sensing motor brush noise on a load sensing part has been used and controlling a precise RC timing control minimizes the thermal deterioration of motor. And using MOS FETs as a electronic switching device increases life-time and liability of control circuit. After testing such circuit and control method, repetition of operating time, cut-off time, wide operation voltage, power noise margin ware increased over eleven-fold.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.3
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• pp.88-96
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• 1995

High speed elevator requires precise drive included in zero speed at start/stop drive for the high stability and controllability. The vector control techniques, which have been used for the precise operation of induction motor, can be divided into two classes; The indirect vector control by slip frequency and the direct vector control by field orientation. The existing direct vector control technique has a robustness against the change of motor parameter and the existing indirect vector control technique has a strength of control ability in the wide speed range comparatively. This study presents the DTIF (Direct Torque Indirect Flux) controller which has robust movement in the transition state and in about zero and low speed using the control technique in which torque is controlled by the direct vector technique and flux is controled by indirect vector technique. The proposed system is verified by simulation and experiment for driving 3 phase induction motor. The process of transition which is from about zero speed and low speed to high speed is compared and measured to specification of phase voltage, phase current and DC link current. It is verified that DTIF controller show robust and stable speed variation.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.9
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• pp.935-939
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• 2015

This paper describes sensorless speed control of brushless DC motors by using direct torque control. Direct torque control offers fast torque response, robust specification of parameter changes, and lower hardware and processing costs compared to vector-controlled drives. In this paper, the current error compensation method is applied to the sensorless speed control of a brushless DC motor. Through this control technique, the controlled stator voltage is applied to the brushless DC motor such that the error between the stator currents in the mathematical model and the actual motor can be forced to decay to zero as time proceeds, and therefore, the motor speed approaches the setting value. This paper discusses the composition of the controller, which can carry out robust speed control without any proportional-integral (PI) controllers. The simulation results show that the control system has good dynamic speed and load responses at wide ranges of speed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.3
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• pp.46-55
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• 2016

This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.