• Title/Summary/Keyword: Wide Bandwidth

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Wide Tuning and Modulation Characteristics Analysis of Coupled-Ring Reflector Laser Diode (결합 링 반사기 레이저 다이오드의 광대역 파장 가변 및 변조 특성 해석)

  • Yoon, Pil-Hwan;Kim, Su-Hyun;Chung, Young-Chul
    • Korean Journal of Optics and Photonics
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    • v.17 no.6
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    • pp.544-547
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    • 2006
  • A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.

A Study On The Bending Characteristics of Ribbon Cable Unit (리본광케이블 유니트의 구부림 특성 연구)

  • 이병철;이영탁;김미경
    • Korean Journal of Optics and Photonics
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    • v.6 no.4
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    • pp.379-384
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    • 1995
  • In order to construct B-ISDN, it is inevitable to introduce optical fiber of low loss and wide bandwidth. Coincidently, high count optical fiber cable is solely important to form optical subscriber network. The best structure of high count optical fiber cable to achieve multi-splicing as well as high density at the same time is the one of taking optical ribbon as a unit of accomodation. However, since optical ribbon has its own width. optical loss due to length difference during the bending of ribbon cable unit occurs in relatively easy way. Therefore, care should be taken during its manufacturing and storage. In t\1::; paper, strain, bending radius and lateral pressure of each fiber in ribbon due to the bending of ribbon cable unit are caculated theoretically. Hence, we have measured optical loss of each fiber as function of unit bending radius, when we bent the ribbon cable unit on the various reel. We found that the result accords well with the theoretical analysis. The result shows the importance to determine proper radius of reel used in ribbon cable manufacturing and storage. orage.

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Studies on S-band Broadband Amplifier using compensated matching network (정합회로 보상 방법을 이용한 S-밴드용 광대역 증폭기 연구)

  • Kim, Jin-Sung;An, Dan;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.6
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    • pp.247-252
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    • 2003
  • In this paper, we have designed and fabricated a broadband 2-stage MMIC amplifier. Broadband characteristics could be obtained by compensated matching networks in a 2-stage amplifier design. This method is compensating low gains at lower frequencies in the 1st-stage with higher gains at lower frequencies in the 2nd- stage and then finally flat gains are obtained in the wide frequency ranges. Also, we have obtained not only broadband characteristics but also high gain using compensation matching network. The fabricated amplifier is measured by attaching on the test PCB(Printed Circuits Board). The measurement results are bandwidth of 1.1~2.8 GHz, S$_{21}$ gain of 11.1$\pm$0.3 ㏈ and P1㏈ of 12.6 ㏈m at 2.4 GHz.

A Design of Wideband Monopulse Comparator for W-Band mm-Wave Seeker Applications (W-대역 밀리미터파 탐색기용 광대역 모노펄스 비교기 설계)

  • Kim, Dong-Yeon;Lim, Youngjoon;Jung, Chae-Hyun;Park, Chang-Hyun;Nam, Sangwook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.2
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    • pp.224-227
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    • 2016
  • This paper proposes a design of W-band mm-wave wideband monopulse comparator using waveguide structure for applications. The main idea of proposed design is to combine a self-compensating phase shifter on $90^{\circ}$ hybrid for wideband $180^{\circ}$ hybrid. Using multiple conventional phase shifters, because of their narrow-band characteristics, tends to restrict working bandwidth of system including antennas. Proposed comparator could relieve the problem since it applies the self-compensating phase shifter. The comparator has waveguide structure so it shows excellent characteristic in loss. It also show wideband characteristic in amplitude and phase response between ports.

A 0.13-㎛ Zero-IF CMOS RF Receiver for LTE-Advanced Systems

  • Seo, Youngho;Lai, Thanhson;Kim, Changwan
    • Journal of electromagnetic engineering and science
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    • v.14 no.2
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    • pp.61-67
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    • 2014
  • This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{\circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{\mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.

V-Band Power Amplifier MMIC with Excellent Gain-Flatness (광대역의 우수한 이득평탄도를 갖는 V-밴드 전력증폭기 MMIC)

  • Chang, Woo-Jin;Ji, Hong-Gu;Lim, Jong-Won;Ahn, Ho-Kyun;Kim, Hae-Cheon;Oh, Seung-Hyueb
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.623-624
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    • 2006
  • In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

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A Study on the Structure of Polarization Independent GaInAs/GaInAsP/InP Semiconductor Optical Amplifier (편광 비의존성 GaInAs/GaInAsP/InP 반도체 광 증폭기 구조에 관한 연구)

  • Park, Yoon-Ho;Kang, Byung-Kwon;Lee, Seok;Cho, Yong-Sang;Kim, Jeong-Ho;Hwang, Sang-Ku;Hong, Tchang-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.3
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    • pp.681-686
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    • 1999
  • In this study, the gain characteristics of the strained structures for SOA were calculated numerically and the optimized strained quantum well for the polarization-insensitive SOA was obtained. The structures used in this calculation were consisted of one, two, and three GaAs Delta layers respectively in the GaInAs(160 $\AA$) well. Moreover the third one was calculated by changing from one mono-layer to three mono-layers in the thichless of GaAs delta layers. This structure enhances the TM mode gain coefficient with good efficiency because the light-hole band is lifted up whereas the heavy-hole band is lowered down. Additionally, The structure of the 3 GaAs delta layers(1 mono layer thickness) shows 3dB gain bandwidth of 85nm in 1.55um wavelength system. This study is expected to be used in making a wide band and polarization-independent semiconductor optical amplifier practically.

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Software-Defined HoneyNet: Towards Mitigating Link Flooding Attacks (링크 플러딩 공격 완화를 위한 소프트웨어 정의 네트워크 기반 허니넷)

  • Kim, Jinwoo;Lee, Seungsoo;Shin, Seungwon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.10a
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    • pp.152-155
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    • 2018
  • Over the past years, Link Flooding Attacks (LFAs) have been introduced as new network threats. LFAs are indirect DDoS attacks that selectively flood intermediate core links, while legacy DDoS attacks directly targets end points. Flooding bandwidth in the core links results in that a wide target area is affected by the attack. In the traditional network, mitigating LFAs is a challenge since an attacker can easily construct a link map that contains entire network topology via traceroute. Security researchers have proposed many solutions, however, they focused on reactive countermeasures that respond to LFAs when attacks occurred. We argue that this reactive approach is limited in that core links are already exposed to an attacker. In this paper, we present SDHoneyNet that prelocates vulnerable links by computing static and dynamic property on Software-defined Networks (SDN). SDHoneyNet deploys Honey Topology, which is obfuscated topology, on the nearby links. Using this approach, core links can be hidden from attacker's sight, which leads to effectively building proactive method for mitigating LFAs.

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Design of Boost Converter PFC IC for Unity Power Factor Achievement (단일 역률 달성을 위한 Boost Converter용 PFC IC 설계)

  • Jeon, In-Sun;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Jo, Hyo-Mun;Lee, Jong-Hwa
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.60-67
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    • 2010
  • We designed Average Current Control PFC IC which has make the average value of boost inductor current became the shape of sine wave. Designed IC has fixed frequency of 75kHz to meet EMI standard requirement. And also RC compensation loop has been designed into the error amp and the current amp, in order that it has wide bandwidth for high speed control. And we use the oscillator which generates by square wave and triangle wave, and add to UVLO, OVP, OCP, TSD which is in order to operate stability. We simulated by using Spectre of Cadence to verify the unity power factor function and various protection circuits and fabricated in a $1{\mu}m$ High Voltage(20V) CMOS process.

Design of a 2.5GHz Quadrature LC VCO with an I/Q Mismatch Compensator (I/Q 오차 보정 회로를 갖는 2.5GHz Quadrature LC VCO 설계)

  • Byun, Sang-Jin;Shim, Jae-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.2
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    • pp.35-43
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    • 2011
  • In this paper, an analysis on I/Q mismatch characteristics of a quadrature LC VCO(Voltage controlled oscillator) is presented. Based on this analysis, a new I/Q mismatch compensator is proposed. The proposed I/Q mismatch compensator utilizes an amplitude mismatch detector rather than the conventional phase mismatch detector requiring much more wide frequency bandwidth. To verify the proposed circuit, a 2.5GHz quadrature LC VCO was designed in a $0.18{\mu}m$ CMOS process and tested. Test results show that an amplitude mismatch detector achieves similar I/Q mismatch compensation performance as that of the conventional phase mismatch detector. The I/Q mismatch compensator consumes 0.4mA from 1.8V supply voltage and occupies $0.04mm^2$.