• 한국재료학회지
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• 제29권1호
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• pp.1-6
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• 2019

Recent industrialization has led to a high demand for the use of fossil fuels. Therefore, the need for producing hydrogen and its utilization is essential for a sustainable society. For an eco-friendly future technology, photoelectrochemical water splitting using solar energy has proven promising amongst many other candidates. With this technique, semiconductors can be used as photocatalysts to generate electrons by light absorption, resulting in the reduction of hydrogen ions. The photocatalysts must be chemically stable, economically inexpensive and be able to utilize a wide range of light. From this perspective, cuprous oxide($Cu_2O$) is a promising p-type semiconductor because of its appropriate band gap. However, a major hindrance to the use of $Cu_2O$ is its instability at the potential in which hydrogen ion is reduced. In this study, gold is used as a bottom electrode during electrodeposition to obtain a preferential growth along the (111) plane of $Cu_2O$ while imperfections of the $Cu_2O$ thin films are removed. This study investigates the photoelectrochemical properties of $Cu_2O$. However, severe photo-induced corrosion impedes the use of $Cu_2O$ as a photoelectrode. Two candidates, $TiO_2$ and $SnO_2$, are selected for the passivation layer on $Cu_2O$ by by considering the Pourbaix-diagram. $TiO_2$ and $SnO_2$ passivation layers are deposited by atomic layer deposition(ALD) and a sputtering process, respectively. The investigation of the photoelectrochemical properties confirmed that $SnO_2$ is a good passivation layer for $Cu_2O$.

• 대한방사선기술학회지:방사선기술과학
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• 제43권6호
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• pp.481-487
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• 2020

Radiation measurement technology has steadily improved and its usage is expanding in various industries such as nuclear medicine, security search, satellite, nondestructive testing, environmental industries and the domain of nuclear power plants (NPPs). Especially, the simultaneous measurements of gamma rays and neutrons can be even more critical for nuclear safety management of spent nuclear fuel and monitoring of the nuclear material. A semiconductor detector comprising cadmium, zinc, and tellurium (CZT) enables to detect gamma-rays due to the significant atomic weight of the elements via immediate neutron and gamma-ray detection. Semiconductor sensors might be used for nuclear safety management by monitoring nuclear materials and spent nuclear fuel with high spatial resolution as well as providing real-time measurements. We aim to introduce a portable nuclide-analysis device that enables the simultaneous measurements of neutrons and gamma rays using a CZT sensor. The detector has a high density and wide energy band gap, and thus exhibits highly sensitive physical characteristics and characteristics are required for performing neutron and gamma-ray detection. Portable nuclide-analysis device is used on NPP-decommissioning sites or the purpose of nuclear nonproliferation, it will rapidly detect the nuclear material and provide radioactive-material information. Eventually, portable nuclide-analysis device can reduce measurement time and economic costs by providing a basis for rational decision making.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.101-106
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• 2022

In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

• 전기전자학회논문지
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• 제26권4호
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• pp.537-544
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• 2022

본 논문은 최근 전자전, 레이더, 기지국 및 위성통신분야에서 각광받고 있는 GaN HEMT(Gallium Nitride High Electron Mobility Transistor) die를 이용한 고출력증폭기의 제작에 사용되는 본드 와이어의 용융단선 현상과 원인을 분석하였다. 고출력증폭기의 주요 성능인 최대 출력전력을 얻기 위해서는 최적의 임피던스 정합이 필요하고 정격전류뿐만 아니라 과도전류에 대한 발열을 고려하여 본드 와이어 소재에 부합하는 직경과 가닥수가 정해져야 한다. 특히, GaN과 같이 에너지 밴드 갭이 넓은 화합물반도체는 설계효율이 낮거나 방열이 부족하면 열 저항 증가로 인해 본드 와이어의 용융단선을 촉발하는 현상을 확인하였다. 본 자료는 발열조건에 대한 모의시험을 수행하고, IR현미경 측정을 통한 검증으로 GaN소자를 이용한 응용분야에 참고자료로 활용이 기대된다.

• 전기전자학회논문지
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• 제26권4호
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• pp.553-559
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• 2022

본 논문에서는 cascode GaN FET의 하프 브릿지 구성에서 오실레이션 억제를 위한 RC 스너버 회로 설계 기술을 분석한다. 대표적인 WBG 소자인 cascode GaN FET는 우수한 고속 스위칭 특성이 우수하다. 다만, 이러한 고속 스위칭 특성으로 인하여 false turn-off 문제가 야기되며, 이를 억제하기 위해 RC 스너버 회로가 필수적이다. 따라서, 일반적으로 많이 사용되는 실험 기반의 선정 기법과 근궤적법을 이용한 분석 기법을 비교한다. 일반적인 방법의 경우 실험적 경험을 바탕으로 오실레이션 억제 성능이 만족될 때까지 지속적인 회로 변경이 필요하다. 하지만, 근궤적 기법의 경우 비진동 R-C 맵을 기반으로 초기값을 설정 할 수 있다. 이러한 설계 기술에 따른 성능을 비교하기 위해 모의실험과 실제 더블 펄스 회로 구성을 통한 실험을 진행하였다.

• 산업경영시스템학회지
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• 제46권3호
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• pp.59-68
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• 2023

Currently, yellow phosphor of Y3Al5O12:Ce3+ (YAG:Ce) fluorescent material is applied to a 450~480nm blue LED light source to implement a white LED device and it has a simple structure, can obtain sufficient luminance, and is economical. However, in this method, in terms of spectrum analysis, it is difficult to mass-produce white LEDs having the same color coordinates due to color separation cause by the wide wavelength gap between blue and yellow band. There is a disadvantage that it is difficult to control optical properties such as color stability and color rendering. In addition, this method does not emit purple light in the range of 380 to 420nm, so it is white without purple color that can not implement the spectrum of the entire visible light spectrum as like sunlight. Because of this, it is difficult to implement a color rendering index(CRI) of 90 or higher, and natural light characteristics such as sunlight can not be expected. For this, need for a method of implementing sunlight with one LED by using a method of combining phosphors with one light source, rather than a method of combining red, blue, and yellow LEDs. Using this method, the characteristics of an artificial sunlight LED device with a spectrum similar to that of sunlight were demonstrated by implementing LED devices of various color temperatures with high color rendering by injecting phosphors into a 405nm deep blue LED light source. In order to find the spectrum closest to sunlight, different combinations of phosphors were repeatedly fabricated and tested. In addition, reliability and mass productivity were verified through temperature and humidity tests and ink penetration tests.

• 한국재료학회지
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• 제33권11호
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• 한국결정성장학회지
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• 제27권6호
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• pp.275-281
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• 2017

AlN는 넓은 밴드 갭 및 높은 열전도율로 인해 넓은 밴드 갭 및 고주파 전자 소자로 유망한 재료이다. AlN은 전력 반도체의 재료로서 더 큰 항복전압과 고전압에서의 더 작은 특성저항의 장점을 가지고 있다. 높은 전도도를 갖는 p형 AlN 에피층의 성장은 AlN 기반 응용 제품 제조에 중요하다. 본 논문에서는 Mg이 도핑된 AlN 에피층을 혼합 소스 HVPE에 의해 성장하였다. Al 및 Mg 혼합 금속은 Mg-doped AlN 에피 층의 성장을 위한 소스 물질로 사용하였다. AlN 내의 Mg 농도는 혼합 소스에서 Mg 첨가 질량의 양을 조절함으로써 제어되었다. 다양한 Mg 농도를 갖는 AlN 에피 층의 표면 형태 및 결정 구조는 FE-SEM 및 HR-XRD에 의해 조사하였다. Mg-doped AlN 에피 층의 XPS 스펙트럼으로 부터 혼합 소스 HVPE에 의해 Mg을 AlN 에피 층에 도핑할 수 있음을 증명하였다.