• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.697-705
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• 2014

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.227-227
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• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. The as-deposited films are annealed in Rapid Thermal Annealing (RTA) system in various atmosphere(Air, Vacuum and $N_2$) at $500^{\circ}C$. In this work, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) of chemical bath deposited (CBD) CdS films on glass is carried out. In case of the annealed CdS films in $N_2$, grain size was larger than as-annealed films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.228-228
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• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. In this work, to improvement of the surface properties of the CdS films, PET substrate is treated by high density $O_2$ plasma. CdS films are prepared by chemical bath deposition(CBD) method. In case of the PET substrate with plasma treatment for 2min, the crystalline orientation of CdS films exhibits a strong hexagonal(002). Grain size was increased from 300nm without $O_2$ plasma treatment to 380nm with an $O_2$ plasma treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• Proceedings of the KIPE Conference
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• 2019.11a
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• pp.190-191
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• 2019

최근 신재생 에너지와 ESS와 같은 분산 전원의 사용이 점차 늘어나면서, 이들을 제어하는 전력 변환 장치에 대한 기대치는 점점 상승하고 있다. 특히 DC 1500V에 대한 요구 및 고 효율, 고 전력밀도에 대한 요구는 최근 Wide band gap 소자의 발전과 함께 산업계 전반에 주요한 이슈이다. 본 논문은 이러한 요구를 만족하기 위한 Hybrid ANPC의 설계를 논하도록 한다. 구성의 정합성을 확인하기 위해, 손실 분석이 진행될 것이며, 최근 SiC 모듈의 발전 방향인 Press-fit type의 설계에 맞춰 Power PCB 설계를 위한 모의 실험을 진행한다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.117-121
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• 2003

In this paper, a micromachined low-loss and ultra wide band reflection-type phase shifter (RTPS) is proposed. The phase shifter shows a constant phase shift from 5 to 17 GHz and consists of two cascaded reflection-type phase shifter. Low-loss reflection termination consists of digital capacitive switches, and air-gap overlay CPW couplers are used in order to employ the low-loss 3 dB coupling. The fabricated phase shifter showed the 5 discrete states, $0^{\circ},{\;}22.5^{\circ},{\;}45^{\circ},{\;}67.5^{\circ},{\;}90^{\circ}$ respectively, the average insertion loss of 3.48 dB, and maximum rms phase error of ${\pm}1.80^{\circ}$ for the relative phase shift from $0^{\circ}{\;}to{\;}90^{\circ}$ over 5-17 GHz.

• Journal of Power Electronics
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• v.16 no.1
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• pp.84-92
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• 2016

Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.508-513
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• 2017

Ultraviolet (UV) photodetectors are used in various industries and fields of research, including optical communication, flame sensing, missile plume detection, astronomical studies, biological sensors, and environmental research. However, general UV detectors that employ Schottky junction diodes and p-n junctions have high fabrication cost and low quantum efficiency. In this study, we investigated the characteristics of materials used to manufacture UV photodetectors in a low-cost solution process that requires easy fabrication of flexible substrates. We fabricated p-type NiO and n-type ZnO substrates with wide band gap by the sol-gel method and compared the characteristics of substrates prepared under different spin-coating and heat-treatment conditions.

• Journal of Power Electronics
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• v.18 no.1
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.