• Journal of the Korean Society of Safety
• /
• v.27 no.4
• /
• pp.13-19
• /
• 2012

The purpose of this study is to extract the major factors related to the deterioration mechanism of white organic light-emitting diodes(WOLED) by performing accelerated testing of temperature, voltage, time, etc., and to develop an accelerated life test(ALT) model. The measurement results of the brightness of the WOLED exhibited that their average brightness tended to increase as the operating voltage increased and that the half-life period of the brightness appeared after approximately 400 hours when the operating voltage was 20V and the ambient temperature was $85^{\circ}C$. It could be seen that although the WOLED showed comparatively the same brightness when the initial acceleration began after the operating voltage was applied to it, its brightness changed excessively after the WOLED's thermal storage had been made. In addition, it was observed that the half-life period was reduced as the ambient temperature and applied voltage increased. The strength of the WOLED which had been maintained in the range of visible light at the maximum load was reduced by the deterioration of the organic light emitting material due to the influence of the operating voltage and temperature, and the reduction of emitted light was small at low voltage and temperature. It could be seen that the failure of the WOLED during the ALT was caused by wear due to load accumulation over time, and that Weibull distribution was appropriate for the life distribution and acceleration was established between test conditions. From the WOLED analysis, it is thought that factors influencing the brightness deterioration are voltage, temperature, etc., and that comprehensive analysis considering discharge control, dielectric tangent margin, etc., would further increase the reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.2
• /
• pp.217-222
• /
• 2004

The white-light-emitting organic LED(OLED) with two-wavelength was fabricated using the DPVBi of blue emitting material and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The basic structure of white-light-emitting OLED was ITO/NPB(150$\AA$)/DPVBi/Rubrene/BCP(100$\AA$)/Alq$_3$(150$\AA$)/Al(600$\AA$). We analyzed the fabricated device through the changes of the DPVBi and Rubrene layer's thickness. We obtained the white-light-emitting OLED with white color light and the CIE coordinate of the device was (0.29, 0.33) at applied voltage of 13V when the thickness of DPVBi layer was 210$\AA$ and the thickness of Rubrene layer was 180$\AA$. At a current of 100㎃/$\textrm{cm}^2$, the quantum efficiency was 0.35％ and at a voltage of 20V, it was 0.405％.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.4
• /
• pp.379-385
• /
• 2006

A stacked white organic light-emitting diode (OLED) having a blue/orange emitting layer was fabricated by synthesizing nitro-DPVT, a new derivative of the blue-emitting material DPVBi on the market. The white-emission of the two-wavelength type was successfully obtained by using both nitro-DPVT for blue~emitting material, orange emission as a host material and Rubrene for orange emission as a guest material. The basic structure of the fabricated white OLED is glass/ITO/NPB$(200{\AA})$/nitro-DPVT$(100{\AA})$/nitro-DPVT:$Rubrene(100{\AA})/BCP(70{\AA})/Alq_3(150{\AA})/Al(600{\AA})$. To evaluate the. characteristics of the devices, firstly, we varied the doping concentrations of fluorescent dye Rubrene from 0.5 % to 0.8 % to 1.3 % to 1.5 % to 3.0 % by weight. A nearly pure white-emission was obtained in CIE coordinates of (0.3259, 0.3395) when the doping concentration of Rubrene was 1.3 % at an applied voltage of 18 V. Secondly, we varied the thickness of the NPB layer from $150{\AA}\;to\;200{\AA}\;to\;250{\AA}\;to\;300{\AA}$ by fixing doping with of Rubrene at 1.3 %. A nearly pure white-emission was also obtained in CIE coordinates of (0.3304, 0.3473) when the NPB layer was $250-{\AA}$ thick at an applied voltage of 16 V. The two devices started to operate at 4 V and to emit light at 4.5 V. The external quantum efficiency was above 0.4 % when almost all of the current was injected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.39-40
• /
• 2009

This paper presents a white-LED driver IC for a mobile application. It uses a high efficiency current mode boost converter method for a low voltage application. For a LED drive, it provides a PWM(Pulse Width Modulation) and analog dimming function. The device was designed and fabricated using 0.35um BCD process. The evaluated waveforms for an implemented IC show promising results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.7
• /
• pp.641-646
• /
• 2005

To fabricate a single layer white organic light emitting diode (OLED), a novel non-conjugated blue emitting material PPPMA-co-DTPM copolymer was synthesized containing a perylene moiety unit with hole transporting and blue emitting ability and a triazine moiety unit with electron transporting ability. The devices were fabricated using PPPMA-co-DTPM $(PPPMA[70\;wt\%]:DTPM[30\;wt\%])$ copolymer by varying the doping concentrations of each red, green and blue fluorescent dye, by molecular-dispersing into Toluene solvent with spin coating method. In case of ITO/PPPMA-co-DTPM:TPB$(3\;mol\%):C6(0.04\;mol\%):NR(0.015\;mol\%)/Al$ structure, as they were molecular-dispersing into 30 mg/ml Toluene solvent, nearly-pure white light was obtained both (0.325, 0.339) in the CIE coordinates at 18 V and (0.335, 0.345) at 15 V. The turn-on voltage was 3 V, the light-emitting turn-on voltage was 4 V, and the maximum external quantum efficiency was $0.667\%$ at 24.5 V. Also, in case of using 40 mg/ml Toluene solvent, the CIE coordinate was (0.345, 0.342) at 20 V.

• Proceedings of the KIEE Conference
• /
• 2006.10b
• /
• pp.154-158
• /
• 2006

The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. These features are brought by the ON-OFF operation of semiconductor switching devices. However, this switching operation causes the surge and EMI(Electromagnetic Interference) which deteriorate the reliability of the converter themselves and entire electronic systems. This problem on the surge and noise is one of the most serious difficulties in AC-to-DC converter. Random Pulse Width Modulation (RPWM) is peformed by adding a random perturbation to switching instant while output-voltage regulation of converter is performed. RPWM method for reducing conducted EMI in single switch three phase discontinuous conduction mode boost converter is presented. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. A RPWM control method was proposed in order to smooth the switching noise spectrum and reduce it's level. Experimental results are verified by converter operating at 300v/1kW with $5%{\sim}30%$ white noise input. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.5
• /
• pp.328-341
• /
• 2014

The object of this paper is to develop optimal optical filter, which can be used to identify the financial account and read the information. The five factors which affect the performance of the optical filter are identified as optical glass type, existence of Fe, Photo pic coating type, and coating form. In this study we seek to determine the optimal combination for the best design of the optical filter. For each combination, the performances of optical filter are investigated using the proper experimental equipments and methods. White-state voltage, black-state voltage, and black-state error rate are used for the performance measures. Through the statistical analysis of the performance data collected, we have determined the optimal design of the optical filter.

• Proceedings of the KIPE Conference
• /
• 2008.06a
• /
• pp.271-273
• /
• 2008

A novel white-LED (light emitting diode) backlight system for 46"LCD TVs which involves the average current controlled X-Y channel driving method is proposed, which is composed of 1 converter and row and column channel switches. In the conventional X-Y channel driving driven with a constant voltage source, the driving current of LED increases because the threshold voltage of LED decreases when LED temperature goes up. To maintain the luminance of backlight constant, the average current controlled X-Y channel driving will be employed. Finally the results are confirmed by experimental results.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.2
• /
• pp.103-106
• /
• 2007

We have investigated the optical and electrical properties of surface mounted white light emitting diode (LED) chips prepared by using yellow phosphors on the blue LED chip. The yellow phosphor mixed with transparent epoxy was coated on the prepared LED chip. The optimum mixing conditions with epoxy and yellow phosphor is obtained at the mixing ratio of epoxy:yellow phosphor = 97:3 wt%. The maximum luminance and light emitting efficiency are above $80,000cd/m^2$ and 23.2 lm/W, respectively, at the bias voltage of 2.9 V. There was no distinct change in the luminance strength with changing of the yellow phosphor ratios. The current of the white LED chip is about 30 mA at 2.9 V.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.12
• /
• pp.2240-2244
• /
• 2010

We have studied white OLED using two types of Zn-complexes as a emitting layer. We synthesized new emissive materials $Zn(HPQ)_2$ as a yellow emitting material and $Zn(HPB)_2$ as a blue emitting material. Zn-complexes have a low molecular compound and thermal stability. The fundamental structures of the fabricated OLED was ITO / NPB (40nm) / $Zn(HPB)_2$ (30nm) / $Zn(HPQ)_2$ / LiF / Al. We varied the thickness of the $Zn(HPQ)_2$ layer 20, 30 40 nm. When the thickness of the $Zn(HPQ)_2$ layer was 20 nm, white emission was achieved. The maximum luminance was 12,000 cd/$m^2$ at a current density of 800 mA/$cm^2$. The CIE coordinates of the white emission was (0.319. 0.338) at an applied voltage of 10 V.